Silicon Electro-Optic Modulator Fabricated on Silicon Substrate Utilizing the Three-Terminal Transistor Waveguide Structure

Abstract

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Silicon optical waveguide modulator incorporating a hybrid structure of transistor and p+-n−-n+ diode

“…The relevant process involved in fabricating the aforementioned silicon light intensity modulators has already been reported elsewhere [9]. A brief detail on the realization of optical modulators is provided as follows.…”

“…Due to the subtleties of various processes involved in the fabrication and characterization of modulators, we believe that there are still quite a few delicate issues that deserve to be fully explored in greater detail. For example, our previous result [9] had demonstrated that only short modulation devices clearly exhibited their sensitivity in their modulation lengths. In addition, the magnitude of biasing gate current had a relative minor effect on the modulation depth measured.…”

“…Since the modulation of silicon is predominantly and most efficiently realized by carrier injection or plasma dispersion [3], both p-i-n diode [4,5] and transistor [6][7][8][9], therefore, are two of the most frequently adopted electronic device structures for the design of silicon modulators. Previously, we had managed to fabricate junction field-effect transistor (JFET)-based silicon waveguide modulators with modulation depth close to 100% at V DS ¼ 75 V when 5 mA gate current was administered [9].…”

“…Previously, we had managed to fabricate junction field-effect transistor (JFET)-based silicon waveguide modulators with modulation depth close to 100% at V DS ¼ 75 V when 5 mA gate current was administered [9]. Due to the subtleties of various processes involved in the fabrication and characterization of modulators, we believe that there are still quite a few delicate issues that deserve to be fully explored in greater detail.…”

Silicon Integrated Waveguide Modulator Based on a Three-Terminal Device Structure

“…Since the modulation of silicon is predominantly and most efficiently achieved by carrier injection or plasma dispersion, 3) both p-i-n diode 4,5) and transistor, [6][7][8][9] therefore, are two of most frequently adopted electrical device structures for the various designs of silicon modulators. Previously, we had managed to fabricate junction field-effect transistor (JFET)-based silicon waveguide modulators with modulation depth close to 100% at V DS ¼ AE5 V when 5 mA gate current was administered.…”