Silicon-embedded 3D toroidal air-core inductor with through-wafer interconnect for on-chip integration

Yu, Xuehong; Kim, Min‐Soo; Herrault, Florian; Ji, Chang-Hyeon; Kim, Jungkwun; Allen, Mark G.

doi:10.1109/memsys.2012.6170201

Cited by 32 publications

(19 citation statements)

References 9 publications

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“…However, toroidal microfabricated inductors have been also embedded in silicon and other substrates [23], [24]. The development of the embedded toroidal aircore inductors that are related to this paper is presented in [25] and [26].…”

mentioning

confidence: 99%

Modeling and Measured Verification of Stored Energy and Loss in MEMS Toroidal Inductors

Araghchini

Kim

et al. 2014

IEEE Trans. on Ind. Applicat.

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This paper presents the derivation and verification of a sinusoidal steady-state equivalent-circuit model for microfabricated inductors developed for use in integrated power electronics. These inductors have a low profile, a toroidal air core, and a single-layer winding fabricated via high-aspect-ratio molding and electroplating. Such inductors inevitably have a significant gap between winding turns. This makes the equivalent resistance more difficult to model. The low profile increases the significance of the energy that is stored in the winding, which together with the winding gap makes the equivalent inductance more difficult to model. The models presented here account for these effects. Finally, the models are verified against results from 2-D and 3-D finiteelement analysis (2-D FEA and 3-D FEA) direct measurement, and from in-circuit experimentation. In all cases, the equivalent-circuit model is observed to be accurate to within several percentage.

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confidence: 99%

Modeling and Measured Verification of Stored Energy and Loss in MEMS Toroidal Inductors

Araghchini

Kim

et al. 2014

IEEE Trans. on Ind. Applicat.

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“…Both technologies rely on high-aspect-ratio molding and electroplating to form 3-D copper windings. The first approach, which emphasizes system compactness, embeds inductors within the volume of a silicon wafer, and uses highpower through-wafer interconnects [74], similar to the way a back-side spiral inductor was embedded and connected in [39]. The second approach, which maximizes the quality factor on loss-less substrates, uses metal-encapsulated polymer vias to realize high-aspect-ratio vertical conductors [75].…”

Section: A Air-core Toroidsmentioning

confidence: 99%

“…A CMOScompatible process for fabrication of 3D toroidal inductors embedded in the volume of a silicon wafer, and capable of interconnection to circuitry on the wafer surface, has been demonstrated [74]. A significant challenge in embedding the structure within the wafer volume was the difficulty of processing inside deep silicon trenches.…”

Section: ) Silicon-embedded Toroidal Inductorsmentioning

confidence: 99%

A Technology Overview of the PowerChip Development Program

Araghchini

Chen

Doan-Nguyen

et al. 2013

IEEE Trans. Power Electron.

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Abstract-The PowerChip research program is developing technologies to radically improve the size, integration, and performance of power electronics operating at up to grid-scale voltages (e.g., up to 200 V) and low-to-moderate power levels (e.g., up to 50 W) and demonstrating the technologies in a high-efficiency light-emitting diode driver, as an example application. This paper presents an overview of the program and of the progress toward meeting the program goals. Key program aspects and progress in advanced nitride power devices and device reliability, integrated highfrequency magnetics and magnetic materials, and high-frequency converter architectures are summarized.Index Terms-Gallium nitride, high frequency (HF), integrated magnetics, integrated power converter, light-emitting diode (LED) driver, PwrSoC.

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“…The interconnections are not through wafer. By contrast, TSV inductors 27 have the advantage of integrated circuit (IC) integration, that is, co-packaged or stacked systems in a package 29,30 . MEMS TSVs are known to be a promising technology for miniaturized RF MEMS and advanced system packaging and integration 31,32 .…”

Section: Introductionmentioning

confidence: 99%

Fabrication of 3D air-core MEMS inductors for very-high-frequency power conversions

Thanh

Mizushima²,

Nour

et al. 2018

Microsyst Nanoeng

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We report a fabrication technology for 3D air-core inductors for small footprint and very-high-frequency power conversions. Our process is scalable and highly generic for fabricating inductors with a wide range of geometries and core shapes. We demonstrate spiral, solenoid, and toroidal inductors, a toroidal transformer and inductor with advanced geometries that cannot be produced by wire winding technology. The inductors are embedded in a silicon substrate and consist of through-silicon vias and suspended windings. The inductors fabricated with 20 and 25 turns and 280-350 μm heights on 4-16 mm 2 footprints have an inductance from 34.2 to 44.6 nH and a quality factor from 10 to 13 at frequencies ranging from 30 to 72 MHz. The air-core inductors show threefold lower parasitic capacitance and up to a 140% higher-quality factor and a 230% higher-operation frequency than silicon-core inductors. A 33 MHz boost converter mounted with an air-core toroidal inductor achieves an efficiency of 68.2%, which is better than converters mounted with a Si-core inductor (64.1%). Our inductors show good thermal cycling stability, and they are mechanically stable after vibration and 2-m-drop tests.

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Silicon-embedded 3D toroidal air-core inductor with through-wafer interconnect for on-chip integration

Cited by 32 publications

References 9 publications

Modeling and Measured Verification of Stored Energy and Loss in MEMS Toroidal Inductors

Modeling and Measured Verification of Stored Energy and Loss in MEMS Toroidal Inductors

A Technology Overview of the PowerChip Development Program

Fabrication of 3D air-core MEMS inductors for very-high-frequency power conversions

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