Silicon epitaxial growth

Nishizawa, Jun–ichi; Terasaki, Takeshi; Shimbo, M.

doi:10.1016/0022-0248(72)90253-9

Cited by 49 publications

(11 citation statements)

References 10 publications

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“…13) Accordingly, suppressing the formation of pyramidal hillocks on the (111)A surface is expected to lead to successful fabrication of new device structures. Similar pyramidal hillocks have been reported in Si epitaxy on Si(111) [19][20][21][22][23][24][25][26][27] and also diamond growth on (111) diamond substrates. 28,29) A few works on the GaAs hillock formation on GaAs(111)A substrates have been reported.…”

Section: Introductionsupporting

confidence: 83%

Area-Selective Epitaxial Growth of GaAs on GaAs(111)A Substrates by Migration-Enhanced Epitaxy

Uehara

Iwai

Yoshiba

et al. 2007

jjap

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We have carried out area-selective epitaxial growth of GaAs on GaAs(111)A substrates using migration-enhanced epitaxy and have investigated the pyramidal hillocks formed on the grown surface. Scanning electron microscopy and atomic force microscopy observations indicate that these hillocks can be classified into two types: hillocks with small top plateaus and those with large plateaus. Investigations on the growth condition dependence of surface morphology and plan-view transmission electron microscopy observation have revealed that both types of hillocks are caused by stacking faults. Hillock cores are found to be stacking fault tetrahedra, whose formation processes result in two types of hillocks. Additionally, we have succeeded in improving the surface flatness by increasing the surface arsenic pressure during growth.

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Section: Introductionsupporting

confidence: 83%

Area-Selective Epitaxial Growth of GaAs on GaAs(111)A Substrates by Migration-Enhanced Epitaxy

Uehara

Iwai

Yoshiba

et al. 2007

jjap

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“…The relation deduced by Venables (Eq. [7]) can be compared with the experimentally found relationship between the saturation cluster density and the supersaturation with the help of Eq. [5] and the calculated adatom concentration (nl) as given in Eq.…”

Section: (I+l)ea+ei+em--edmentioning

confidence: 99%

“…For SiH4-HC1-H2 system on SiO2 and SisN4 substrates in the temperature region of 925~176 Equation [7] can be modified by introducing nl ----J1Ts, where nl is given by Eq. [8] or [9] and ~s is defined as Ts -v -1 exp Ea/tCT, Ea being the enthalpy of desorption and v the adatom vibration frequency.…”

Section: Adatom Concentration and Surface Coverages--tomentioning

confidence: 99%

The Nucleation of CVD Silicon on SiO2 and Si3 N 4 Substrates: I . The System at High Temperatures

Claassen

Bloem

1980

J. Electrochem. Soc.

113

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The grain size in polycrystalline silicon layers is subject to various external conditions among which the initial nucleation of silicon on the substrate may play a decisive role. This article describes experiments with silicon on SiO2 and SisN4 substrates in the SiH4-HCl-H2 system for temperatures between 925 ~ and 1200~ The saturation cluster densities are determined as a function of gas phase composition and temperature and could be varied between 194-1011 em -2. The experimental results are compared with predictions of existing nucleation theories using analysis of the monomer silicon adatom concentration, in this way the nucleation can be described satisfactorily and approximate values for the size of the critical cluster can be derived.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 141.211.4.224 Downloaded on 2015-07-10 to IP

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“…A layer growth mechanism * Electrochemical Society Active Member. dominated by surface migration of adsorbed clusters was proposed for the vapor-solid phase interaction (8)(9)(10), but the reaction process in the vapor phase has not been clarified yet, especially in the GaAs epitaxial growth. Besides an early work by Shaw (11), a number of models of vapor-phase reactions and transport phenomena in GaAs epitaxial growth were deduced mostly from an equilibrium viewpoint (12)(13)(14).…”

Section: Discussionmentioning

confidence: 99%

Reaction Mechanism of GaAs Vapor‐Phase Epitaxy

Nishizawa

Shimawaki

Sakuma

1986

J. Electrochem. Soc.

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Reaction mechanisms of GaAs epitaxial growth using GaAs-AsCI~-H2 and GaAs-AsC13-N2 systems have been investigated by means of infrared spectroscopy, and probable reaction models are discussed. Over the whole temperature range of 400 ~ -840~ dominant gallium chlorides observed by a sampling method are Ga2C1G and an unidentified gallium compound with chlorine that has an absorption band at 1600 cm ' in the hydrogen carrier system, but only Ga2CIG in the nitrogen carrier system. Analyses by a mechanical balance have suggested that GaC13 samlSled frorfi ~reactor should dimerize into the greater part of Ga2C16 in a gas cell. A photoenhancement of AsC13 reduction by H2 has been examined by irradiating with an excimer laser. A photoexcitation of GaC13 has been ascertained, and epitaxial growth with a single flat temperature profile has been realized at low temperatures below 600~ by irradiation with a 249 nm laser.

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Silicon epitaxial growth

Cited by 49 publications

References 10 publications

Area-Selective Epitaxial Growth of GaAs on GaAs(111)A Substrates by Migration-Enhanced Epitaxy

Area-Selective Epitaxial Growth of GaAs on GaAs(111)A Substrates by Migration-Enhanced Epitaxy

The Nucleation of CVD Silicon on SiO2 and Si3 N 4 Substrates: I . The System at High Temperatures

Reaction Mechanism of GaAs Vapor‐Phase Epitaxy

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