Silicon Epitaxial Regrowth Passivation of SiGe Nanostructures Pattered by AFM Oxidation

Xiang, Bo; Rokhinson, Leonid P.; Sturm, James C.

doi:10.1557/proc-737-e14.5

Cited by 1 publication

(2 citation statements)

References 13 publications

(17 reference statements)

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“…To pattern thicker structures, we then adopted a 2-step transfer method [21]. For example, if one wants to pattern a 8-nm SiGe layer, one can first oxidize a thin (2 nm) Si layer on top of it by AFM oxidation.…”

Section: Ihb Nanopatterning Technology Mb 1 Afm-based Low-energymentioning

confidence: 99%

“…100 meV) and the devices varied from scan to scan as carriers moved in and out of traps [26]. We then passivated the dot surfaces with the low-temperature epitaixal regrowth of silicon by chemical vapor deposition [27]. A critical issue was the ability to clean the interface before growth at low temperature (to avoid dopant diffusion) [28].…”

Section: Iiib2 Nano-contactsfor Ultra-small (<10 Nm) Devicesmentioning

confidence: 99%

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Operation and Fabrication of Single Electron and Coherent Nanoscale Semiconductor Devices

Sturm¹

2004

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Public Reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comment regarding this burden estimates or any other aspect of this collection of information, including suggestions for reducing this burden, to Washington Headquarters Services, Directorate for information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and As MOSFET scaling matures in the next 10-20 years, "quantum" semiconductor devices are expected to enable the continued increase in the performance of electronic systems. These devices depend on the "coherent" transport of electrons and/or on the properties of single electrons. Because electrons scatter, causing them to lose coherency, and because the effect of single charge is increased in small volumes, nanotechnology is required to fabricate such devices. In this work, we examined fundamental and practical issues associated with quantum devices. Highlights of the work are the theoretical and experimental confirmation of the increase of the coherence time of electrons confined to small volume, the development of high throughput nanomanufacturing tools, and the use of these tools to create single electron memory devices operating at room AbstractAs MOSFET scaling matures in the next 10-20 years, "quantum" semiconductor devices are expected to enable the continued increase in the performance of electronic systems. These devices depend on the "coherent" transport of electrons and/or on the properties of single electrons. Because electrons scatter, causing them to lose coherency, and because the effect of single charge is increased in small volumes, nanotechnology is required to fabricate such devices. In this work, we examined fundamental and practical issues associated with quantum devices. Highlights of the work are the theoretical and experimental confirmation of the increase of the coherence time of electrons confined to small volume, the development of high throughput nanomanufacturing tools, and the use of these tools to create single electron memory devices operating at room temperature.

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Section: Ihb Nanopatterning Technology Mb 1 Afm-based Low-energymentioning

confidence: 99%