Silicon Etching in HNO[sub 3]/HF Solution: Charge Balance for the Oxidation Reaction

Kooij, Ernst S.

doi:10.1149/1.1390775

Cited by 86 publications

(80 citation statements)

References 20 publications

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“…31,32 In both cases, increasing the H 2 O 2 or HF concentration increases the oxidation rate and dissolution rate, respectively, resulting in nanostructures with varying optical properties. 33 Figures 1(a) to 1(h) show the crosssection SEM micrographs and TEM images acquired from the NW samples grown with HF concentration of 1.8 M, 2.8 M, 4.8 M, and 5.8 M in a fixed H 2 O 2 concentration of 0.5 M. From Fig.…”

Section: Resultsmentioning

confidence: 99%

Effect of hydrofluoric acid concentration on the evolution of photoluminescence characteristics in porous silicon nanowires prepared by Ag-assisted electroless etching method

Najar

Slimane

Hedhili

et al. 2012

Journal of Applied Physics

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CitationNajar A, Slimane AB, Hedhili MN, Anjum D, Sougrat R, et al. (2012) We report on the structural and optical properties of porous silicon nanowires (PSiNWs) fabricated using silver (Ag) ions assisted electroless etching method. Silicon nanocrystallites with sizes <5 nm embedded in amorphous silica have been observed from PSiNW samples etched using the optimum hydrofluoric acid (HF) concentration. The strongest photoluminescence (PL) signal has been measured from samples etched with 4.8 M of HF, beyond which a significant decreasing in PL emission intensity has been observed. A qualitative model is proposed for the formation of PSiNWs in the presence of Ag catalyst. This model affirms our observations in PL enhancement for samples etched using HF < 4.8 M and the eventual PL reduction for samples etched beyond 4.8 M of HF concentration. The enhancement in PL signals has been associated to the formation of PSiNWs and the quantum confinement effect in the Si nanocrystallites. Compared to PSiNWs without Si-O x , the HF treated samples exhibited significant blue PL peak shift of 100 nm. This effect has been correlated to the formation of defect states in the surface oxide. PSiNWs fabricated using the electroless etching method can find useful applications in optical sensors and as anti-reflection layer in silicon-based solar cells. V C 2012 American Institute of Physics.

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Section: Resultsmentioning

confidence: 99%

Effect of hydrofluoric acid concentration on the evolution of photoluminescence characteristics in porous silicon nanowires prepared by Ag-assisted electroless etching method

Najar

Slimane

Hedhili

et al. 2012

Journal of Applied Physics

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“…2), experimental data have shown that standard deviation of the depth of isolation grooves is almost constant in the p-type Si region indicating a low etching rate. However, the etching rate is strongly dependent on carrier concentration [12] which varies by four orders of magnitude in the p-type region of high-power Si devices under consideration [13]. It is reasonable to assume that hydrogen atoms, which have originated as the reaction products, penetrate into Si during etching process and passivate dopant boron atoms leading to a formation of a high-resistivity layer.…”

Section: Resultsmentioning

confidence: 99%

Chemical etching of isolation grooves in high-power silicon devices

Šalucha¹,

Šimkienė²

2009

Lithuanian J. Phys.

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The procedure of wet chemical etching, which plays an important role in the fabrication of high-power Si devices in standard commercial equipment, is discussed. The characteristics of isolation grooves in Si high-voltage thyristors and diodes have been investigated, with respect to etchants and wet etching conditions. It has been found that the standard deviation in the depth values of isolation grooves produced in the Si wafer of 125 mm in diameter is reduced to 0.85 µm using a proposed modified technological procedure.

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“…However, several further species including NO2, N2O, and H2 were detected as additional reaction products of HF-HNO3-H2O etching solutions [6,7], and the formation of an intermediate silicon dioxide layer was excluded by means of XPS measurements [8,9]. Instead, after etching in HF-containing solutions silicon surfaces are completely hydrogen-terminated, and in a few cases F atoms have been detected on the silicon surface.…”

Section: Introductionmentioning

confidence: 98%

HF-HNO 3 -H 2 SO 4 /H 2 O Mixtures for Etching Multicrystalline Silicon Surfaces: Formation of NO2+${\rm{N}}{{\rm{O}}_{{2^ + }}}$ , Reaction Rates and Surface Morphologies

Lippold¹,

Patzig-Klein²,

Kroke³

2018

Energyo

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The reaction behavior of HF-HNO3-H2O etching mixtures, which are frequently used for texturing silicon surfaces, is significantly influenced by the addition of sulfuric acid. w (97 %-H2SO4) < 0.3. For higher concentrations of sulfuric acid, H 2SO4 can be considered as a diluent. In order to investigate the influence of the sulfuric acid at constant HF and HNO3 quantities, fuming HNO3 (100 %) was used and the water in the mixtures successively replaced by H2SO4. A sudden increase of etching rates was found for sulfuric acid concentrations around 6 mol L-1 correlating with the characteristic color of the etching solutions. Decreased reaction rates at > 7 mol L-1 H2SO4 are attributed to high solution viscosities and the formation of fluorosulfuric acid. Generally, in HF-HNO3-H2SO4/H2O etching mixtures a reduced dissociation of nitric acid, the formation of nitronium ions, the solubility of neutral nitrogen intermediates (e. g. NO2, N2O3), as well as other effects influence the attack of silicon surfaces. The structure of etched silicon surfaces was investigated by means of scanning electron (SEM) and laser scanning microscopy (LSM). The morphologies are influenced most significantly by the relative amounts of sulfuric acid. Unexpectedly, in nitronium ion-containing mixtures rough surfaces with pore-like etching pits are generated.

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Silicon Etching in HNO[sub 3]/HF Solution: Charge Balance for the Oxidation Reaction

Cited by 86 publications

References 20 publications

Effect of hydrofluoric acid concentration on the evolution of photoluminescence characteristics in porous silicon nanowires prepared by Ag-assisted electroless etching method

Effect of hydrofluoric acid concentration on the evolution of photoluminescence characteristics in porous silicon nanowires prepared by Ag-assisted electroless etching method

Chemical etching of isolation grooves in high-power silicon devices

HF-HNO 3 -H 2 SO 4 /H 2 O Mixtures for Etching Multicrystalline Silicon Surfaces: Formation of NO2+${\rm{N}}{{\rm{O}}_{{2^ + }}}$ , Reaction Rates and Surface Morphologies

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