Handbook Series on Semiconductor Parameters 1996
DOI: 10.1142/9789812832078_0001
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SILICON (Si)

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Cited by 81 publications
(11 citation statements)
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“…The above examples show that the doping concentration of semiconductors can be tuned by several orders of magnitude, resulting in a significant tunability of their plasmonic properties. However, the key limitation of semiconductor-based SEIRA is that the carrier mobility in conventional semiconductors is typically too low to support plasmons with low damping at high carrier density [60,61,125,126] (see Figure 2), thus limiting their potential for SEIRA.…”
Section: Semiconductor-based Seiramentioning
confidence: 99%
“…The above examples show that the doping concentration of semiconductors can be tuned by several orders of magnitude, resulting in a significant tunability of their plasmonic properties. However, the key limitation of semiconductor-based SEIRA is that the carrier mobility in conventional semiconductors is typically too low to support plasmons with low damping at high carrier density [60,61,125,126] (see Figure 2), thus limiting their potential for SEIRA.…”
Section: Semiconductor-based Seiramentioning
confidence: 99%
“…We carried out numerical estimates for the structure with p-Si conducting channel. The semiconductor p-Si has quite high values of the electrical breakdown field strength (3 Á 10 5 V=cm), and high values of the saturation electron velocity (1:5 Á 10 7 cm=s) in high electric fields and relatively low electron mobility at room temperature [10]. The crystal heterostructures Si O 2 =Si =Si O 2 are mastered well enough by now [11].…”
Section: Calculated Values Of the First Harmonic Electric Field At Y mentioning
confidence: 99%
“…We use fully relativistic normconserving pseudopotentials generated with Pseudo Dojo [44], and include spin-orbit coupling in all calculations. The BSE is solved on a 30 × 30 × 30 k-point grid with a rigid scissor shift applied to the DFT band structure to match the experimental band gap [45]. We use a 6 Ry cutoff for the statically screened Coulomb interaction and the highest 4 valence bands and lowest 2 conduction bands to converge the low-energy excitons.…”
Section: Numerical Calculationsmentioning
confidence: 99%
“…We use a 6 Ry cutoff for the statically screened Coulomb interaction and the highest 4 valence bands and lowest 2 conduction bands to converge the low-energy excitons. In the radiative lifetime calculations, we use experimental values for the static dielectric constant and effective masses [45,46] to remove a possible source of error. Due to the light electron mass, which leads to a steep conduction band valley, fully converging the radiative lifetimes in GaAs requires very fine Brillouin zone grids with a large computational cost.…”
Section: Numerical Calculationsmentioning
confidence: 99%