Silicon for thin-film transistors

Wagner, S.; Glesková, Helena; Cheng, I-Chun; Wu, Ming-Hung

doi:10.1016/s0040-6090(03)00121-4

Cited by 98 publications

(51 citation statements)

References 21 publications

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“…[ 15 , 30 ] Such circuits are difficult to realize using a-Si TFTs or metal oxide TFTs due to the two order-of-magnitude difference between electron and hole mobility. [ 31 ] Complementary circuits with a-Si TFTs or metal oxide TFTs would require unbalanced geometries between n-channel and p-channel transistors, leading to diffi culties for circuit layout.…”

Section: Methodsmentioning

confidence: 99%

Air‐Operable, High‐Mobility Organic Transistors with Semifluorinated Side Chains and Unsubstituted Naphthalenetetracarboxylic Diimide Cores: High Mobility and Environmental and Bias Stress Stability from the Perfluorooctylpropyl Side Chain

Jung

Sun

Andreou

et al. 2010

Adv Funct Materials

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Section: Methodsmentioning

confidence: 99%

Air‐Operable, High‐Mobility Organic Transistors with Semifluorinated Side Chains and Unsubstituted Naphthalenetetracarboxylic Diimide Cores: High Mobility and Environmental and Bias Stress Stability from the Perfluorooctylpropyl Side Chain

Jung

Sun

Andreou

et al. 2010

Adv Funct Materials

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“…It is thus necessary to develop compatible temperature process below 200 °C able to produce devices with high reliability, stability, reproducibility and performances adapted to the different applications [1]. High mobility top-gate microcrystalline silicon N-type TFTs were already fabricated, but a deterioration of their electrical characteristics occurs under electrical stress [2].…”

Section: Introductionmentioning

confidence: 99%

Decreasing the thickness of the active layer of microcrystalline silicon TFTs

Belarbi

Kandoussi

Souleiman

et al. 2010

Phys. Status Solidi (c)

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Top‐gate TFTs are fabricated at T < 200 °C using μc‐Si:H film with different thickness, 30, 100 and 200 nm as active layer. Silicon nitride deposited at 150 °C is used as gate insulator. Due to improved crystallinity, mobility increases with the μc‐Si:H thickness. However, the columnar structure of thick μc‐Si:H films induces some shift of the TFT's characteristics. The denser structure of thinnest film, constituted by nano‐grains embedded in amorphous phase, leads to highly stable TFTs. Present results show that a mean way between the needs of high crystallinity, obtained in high thick films, and stability, obtained with dense material, has to be found in μc‐Si:H low temperature technology (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…• C for deposition and activate dopants [5]. In case of the 3D archi-tecture, temperature restrictions are at the level of 350…”

Section: Introductionmentioning

confidence: 99%

ZnO by ALD - Advantages of the Material Grown at Low Temperature

et al. 2009

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The 3D-architecture is a prospective way in miniaturization of electronic devices. However, this approach can be realized only if metal paths are placed not only at the top, but also beneath the electronic parts, which imposes drastic temperature limitations for the electronic device processing. Therefore last years a lot of investigations are focused on materials which can be grown at low temperature with electrical parameters appropriate for electronic applications. Zinc oxide grown by the atomic layer deposition method is one of the materials of choice. We obtained ZnO-ALD films at growth temperature range between 100• C and 200• C, and with controllable electrical parameters. Free carrier concentration was found to scale with deposition temperature, so it is possible to grow ZnO films with desired conductivity without any intentional doping. We used correlation of electrical and optical parameters to optimize the deposition process. Zinc oxide layers obtained in that way have free carrier concentration as low as 10 16 cm −3 and high mobility (10-50 cm 2 /(V s)), which satisfies requirements for a material used in three-dimensional memories.

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Silicon for thin-film transistors

Cited by 98 publications

References 21 publications

Air‐Operable, High‐Mobility Organic Transistors with Semifluorinated Side Chains and Unsubstituted Naphthalenetetracarboxylic Diimide Cores: High Mobility and Environmental and Bias Stress Stability from the Perfluorooctylpropyl Side Chain

Air‐Operable, High‐Mobility Organic Transistors with Semifluorinated Side Chains and Unsubstituted Naphthalenetetracarboxylic Diimide Cores: High Mobility and Environmental and Bias Stress Stability from the Perfluorooctylpropyl Side Chain

Decreasing the thickness of the active layer of microcrystalline silicon TFTs

ZnO by ALD - Advantages of the Material Grown at Low Temperature

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