1995
DOI: 10.1063/1.113780
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Silicon pn junction imaging and characterizations using sensitivity enhanced Kelvin probe force microscopy

Abstract: We observed the surface potential of silicon pn junctions using a Kelvin probe force microscope whose sensitivity was about five times better than that of a conventional one. It was achieved by three major improvements: electrostatic force detection using the second cantilever resonance, cantilever Q-value enhancement by operating in a vacuum, and direct cantilever resonance frequency detection using the frequency modulation technique. It was demonstrated that the surface potential of the pn junctions made by … Show more

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Cited by 286 publications
(164 citation statements)
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“…The force and force gradient at f m modulates the cantilever fundamental mechanical resonance (frequency f 0 ) creating sidebands at f 0 þ f m and f 0 À f m . The f 0 þ f m sideband is detected at the second mechanical resonance of the cantilever using standard AFM methods 3,4 (see supplemental information 12 b).…”
mentioning
confidence: 99%
“…The force and force gradient at f m modulates the cantilever fundamental mechanical resonance (frequency f 0 ) creating sidebands at f 0 þ f m and f 0 À f m . The f 0 þ f m sideband is detected at the second mechanical resonance of the cantilever using standard AFM methods 3,4 (see supplemental information 12 b).…”
mentioning
confidence: 99%
“…Even earlier, the second mode of oscillation of an AFM cantilever was employed for the detection of the surface potential, simultaneously with the regular topography measurement in a Kelvin probe force microscope ͑KPFM͒. 9 In this method an ac bias at the frequency of the second oscillation mode is applied to the sample ͑or the tip͒, which induces cantilever oscillation at this frequency. If an additional dc bias is adjusted correctly to compensate for the electrostatic force between the tip and the sample, the oscillation at this frequency will vanish and the dc bias will correspond to the contact potential ͑CP͒ between the tip and the sample.…”
mentioning
confidence: 99%
“…The lock-in amplifier can apply DC and AC bias voltages [V dc and V ac cos(2πf m t), respectively] between a tip and a sample, detect a modulation frequency (f m ) component of electrostatic force, and feedback control V dc to obtain CPD (V CPD ). We adopted amplitude modulation KFM (AM-KFM) [23] and set f m to the 1st resonance (f 1 =67 kHz) of an Au-coated cantilever (PPP-FMAu, Nanoworld). For simultaneous topography imaging, the cantilever oscillated at the 2nd resonance (f 2 =401.2 kHz).…”
Section: Introductionmentioning
confidence: 99%