Silicon Integrated InGaAs/InAlAs/AlAs HBV Frequency Tripler

Abstract

Abstract-We present an integrated heterostructure barrier varactor (HBV) frequency tripler on silicon substrate. The InGaAs/ InAlAs/ AlAs material structure was transferred onto the silicon wafer using low temperature plasma assisted bonding. The presented multiplier operates in the W-band (90-110 GHz). The module delivers 22.6 dBm, with a conversion loss of 6 dB, and 9 % 3-dB bandwidth.Index Terms-Frequency multipliers, heterostructure barrier varactors, heterogeneous integration, integrated circuits, millimeter-wave diodes, silicon, wafer bonding, III-V semiconductors.

A 474 GHz HBV Frequency Quintupler Integrated on a 20 <formula formulatype="inline"><tex Notation="TeX">$\mu{\hbox{m}}$</tex> </formula> Thick Silicon Substrate

“…A COMMON METHOD to generate power at THz frequencies is to use a single stage, or a chain of frequency multipliers [1]. These are often based on transistors [2], [3], Schottky diodes [4] or heterostructure barrier varactors (HBVs) [5]- [8] on GaAs or InP substrates. In comparison with transistor and Schottky diode devices, the HBV generates only odd harmonics of the input signal, which reduces the number of idler frequencies for high order frequency multipliers [9]- [11].…”