Silicon light-emitting transistor for on-chip optical interconnection

Saito, Shinichi; Hisamoto, D.; Shimizu, Haruka; Hamamura, Hirotaka; Tsuchiya, R.; Matsui, Yasuhiro; Mine, T.; Arai, Tadashi; Sugii, Nobuyuki; Torii, Kazuyoshi; Kimura, S.; Onai, T.

doi:10.1063/1.2360783

Cited by 47 publications

(36 citation statements)

References 15 publications

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“…A monolithic integrated laser source on Si has been considered a "holy-grail", since the indirect band gap semiconductors, Si and Ge, are usually regarded unsuitable for laser diodes due to their inefficient radiative recombination. Extensive research has been conducted on porous Si [15], Si nanocrystals [16], ultrathin Si quantum wells (QWs) [17], Si and SiGe nanostructures [18], GeSn [19], Si Raman lasers [20], and III-V lasers grown on [21] or bonded to Si [22]. While stimulated emission from ultrathin Si QWs has been observed, the gain is not enough to overcome losses and enable lasing [23].…”

Section: Introductionmentioning

confidence: 99%

Heterogeneously grown tunable group-IV laser on silicon

et al. 2016

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Tunable tensile-strained germanium (epsilon-Ge) thin films on GaAs and heterogeneously integrated on silicon (Si) have been demonstrated using graded III-V buffer architectures grown by molecular beam epitaxy (MBE). epsilon-Ge epilayers with tunable strain from 0% to 1.95% on GaAs and 0% to 1.11% on Si were realized utilizing MBE. The detailed structural, morphological, band alignment and optical properties of these highly tensile-strained Ge materials were characterized to establish a pathway for wavelength-tunable laser emission from 1.55 μm to 2.1 μm. High-resolution X-ray analysis confirmed pseudomorphic epsilon-Ge epitaxy in which the amount of strain varied linearly as a function of indium alloy composition in the InxGa1-xAs buffer. Cross-sectional transmission electron microscopic analysis demonstrated a sharp heterointerface between the epsilon-Ge and the InxGa1-xAs layer and confirmed the strain state of the epsilon-Ge epilayer. Lowtemperature micro-photoluminescence measurements confirmed both direct and indirect bandgap radiative recombination between the Γ and L valleys of Ge to the light-hole valence band, with L-lh bandgaps of 0.68 eV and 0.65 eV demonstrated for the 0.82% and 1.11% epsilon-Ge on Si, respectively. The highly epsilon-Ge exhibited a direct bandgap, and wavelength-tunable emission was observed for all samples on both GaAs and Si. Successful heterogeneous integration of tunable epsilon-Ge quantum wells on Si paves the way for the implementation of monolithic heterogeneous devices on Si

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Section: Introductionmentioning

confidence: 99%

Heterogeneously grown tunable group-IV laser on silicon

et al. 2016

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“…An optically pumped light emitting device is certainly possible, but an electrically excited LED requires vertical carrier transport through the wide band gap a-SiO 2 barriers. For thin enough barriers such transport via hole tunneling has been observed (74,75), visible LEDs have been demonstrated (50)(51)(52)(53)76,77) and, remarkably, a silicon light-emitting transistor for on-chip optical interconnection has been produced (78). Following a theoretical prediction of a large optical gain in ultra thin silicon quantum wells (79), Saito et al (80) have recently observed optical gain and stimulated emission by current injection into an ultra thin layer of silicon embedded in a resonant optical cavity.…”

Section: Future Prospectsmentioning

confidence: 99%

(Luminescence and Display Materials Division Centennial Outstanding Achievement Award) Band Gap Luminescence from Nanometer Thick Si/SiO₂ Quantum Wells

Lockwood

2011

ECS Trans.

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In opto-electronics and photonics, the severe disadvantage of an indirect band gap has limited the application of elemental silicon. Amongst a number of diverse approaches to engineering efficient light emission in silicon nanostructures, one system that has received considerable attention has been Si/SiO 2 quantum wells. Engineering such structures has not been easy, because to observe the desired quantum confinement effects, the quantum well thickness has to be less than 5 nm. Nevertheless, such ultra thin structures have now been produced by a variety of techniques. The SiO 2 layers are amorphous, but the silicon layers can range from amorphous through nanocrystalline to single-crystal form. The fundamental band gap of the quantum wells has been measured primarily by optical techniques and strong confinement effects have been observed. A number of theories based primarily on ab initio approaches have been developed to explain these results with varying degrees of success. A detailed comparison is made between theoretical and experimental determinations of the band gap in Si/SiO 2 quantum wells.

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“…10 On the other hand, the rapid progress of the Si nanoelectronics enables us to make such structures by top-down processes. [11][12][13][14][15][16][17][18] By the thermal oxidation of silicon-on-insulator (SOI) substrates, Si single quantum wells (SQWs) were formed and the excellent Si/SiO 2 interfacial quality were confirmed by photoluminescence. [11][12][13] The electroluminecence (EL) [14][15][16][17][18] and stimulated emissions 17 were also demonstrated by lateral current injections into Si SQWs.…”

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confidence: 99%

Stimulated emission of near-infrared radiation in silicon fin light-emitting diode

Saito

Takahama

Tani

et al. 2011

Applied Physics Letters

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We propose top-down processes to make silicon multiple quantum wells called fins for a lightemitting diode. The silicon fins are formed vertically to a substrate and embedded in a Si 3 N 4 waveguide. By current injections into silicon fins, we have observed stimulated emission spectra peaked at the wavelengths corresponding to the periodic structures of fins. The near-field mode profiles obtained at the edge of the waveguide qualitatively agreed with theoretical calculations. It has been turned out that both transverse-electric and transverse-magnetic fields can contribute to the optical gain.

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Silicon light-emitting transistor for on-chip optical interconnection

Cited by 47 publications

References 15 publications

Heterogeneously grown tunable group-IV laser on silicon

Heterogeneously grown tunable group-IV laser on silicon

(Luminescence and Display Materials Division Centennial Outstanding Achievement Award) Band Gap Luminescence from Nanometer Thick Si/SiO₂ Quantum Wells

Stimulated emission of near-infrared radiation in silicon fin light-emitting diode

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Silicon light-emitting transistor for on-chip optical interconnection

Cited by 47 publications

References 15 publications

Heterogeneously grown tunable group-IV laser on silicon

Heterogeneously grown tunable group-IV laser on silicon

(Luminescence and Display Materials Division Centennial Outstanding Achievement Award) Band Gap Luminescence from Nanometer Thick Si/SiO2 Quantum Wells

Stimulated emission of near-infrared radiation in silicon fin light-emitting diode

Contact Info

Product

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(Luminescence and Display Materials Division Centennial Outstanding Achievement Award) Band Gap Luminescence from Nanometer Thick Si/SiO₂ Quantum Wells