Silicon Mach–Zehnder waveguide interferometers based on the plasma dispersion effect

Treyz, G. V.; May, P. G.; Halbout, J.‐M.

doi:10.1063/1.105338

Cited by 103 publications

(49 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The 10%-90% rise (OFF switching) and fall (ON switching) time for the modulated signals in Fig. 4 is about 100 ns, in good agreement with [6]. We can thus estimate the bandwidth of the plasma dispersion effect for these devices to about 3.5 MHz.…”

Section: Measurement Results and Discussionsupporting

confidence: 68%

“…2) has been made quasiperiodic in order to avoid possible unwanted multiple reflection of the propagating mode. The diode injected charge is responsible for light phase modulation through the plasma dispersion effect, as stated in [6] among others.…”

Section: Devices Descriptionmentioning

confidence: 99%

“…MZIs using standard Y-junction couplers based on the plasma dispersion effect have also been proposed in the past [6,7]. A response time of 50 ns and a modulation depth of − 4.9 dB are reported in [6], while a modulation depth of 98% measured in [7].…”

Section: Introductionmentioning

confidence: 99%

“…A response time of 50 ns and a modulation depth of − 4.9 dB are reported in [6], while a modulation depth of 98% measured in [7].…”

Section: Introductionmentioning

confidence: 99%

“…These devices have a limited extinction ratio of about 13 dB for the best reported [1, 2, 4], and are bandwidth-limited to about 100 kHz [1, 2], except for a special device operating up to 700 kHz [5]. Multimode interference (MMI) couplers in SOI technology have been proposed for the first time in thermo-optic 1 × 2 and 2 × 2 switches [3].MZIs using standard Y-junction couplers based on the plasma dispersion effect have also been proposed in the past [6,7]. A response time of 50 ns and a modulation depth of − 4.9 dB are reported in [6], while a modulation depth of 98% measured in [7].…”

mentioning

confidence: 99%

See 4 more Smart Citations

Intensity modulation in two Mach–Zehnder interferometers using plasma dispersion in silicon-on-insulator

2001

View full text Add to dashboard Cite

We present comparative measurements of two Mach-Zehnder interferometers, one with Y-junction couplers and the other with MMI couplers, both developed in siliconon-insulator technology and using plasma dispersion effect for light phase modulation. Measurements of fiber-to-fiber losses, absorption coefficient, output intensity vs. time and extinction ratio vs. frequency have been performed at λ = 1.3 µm and at λ = 1.55 µm. Results are reported and discussed in this paper.PACS 42.25.Hz; 42.82 Bq; 42.82 Et; 42.82 Gw; 42.79Hp IntroductionMach-Zehnder interferometers (MZI) in siliconon-insulator (SOI) technology have been and still are the subject of much interest due to the high potential of silicon optoelectronic devices. Silicon is highly transparent in the infrared spectral region and its electronic capabilities are well known, making SOI a very attractive technology combining optical and electronic functions with optimal features on the same substrate.MZIs using standard Y-junction couplers based on the thermo-optic effect have already been proposed in the past. These devices have a limited extinction ratio of about 13 dB for the best reported [1, 2, 4], and are bandwidth-limited to about 100 kHz [1, 2], except for a special device operating up to 700 kHz [5]. Multimode interference (MMI) couplers in SOI technology have been proposed for the first time in thermo-optic 1 × 2 and 2 × 2 switches [3].MZIs using standard Y-junction couplers based on the plasma dispersion effect have also been proposed in the past [6,7]. A response time of 50 ns and a modulation depth of − 4.9 dB are reported in [6], while a modulation depth of 98% measured in [7].We present two MZIs, one with Y-junction-couplers and one with MMI couplers, both based on the plasma dispersion effect. A Y-junction-couplers MZI based on the thermo-optic effect has also been realized on the same substrate for performance comparison. The fiber-to-fiber insertion losses, ab-✉ Fax: +41-21/693 26 14, E-mail: paolo.dainesi@epfl.ch sorption coefficients, optical coefficients modulated intensities as functions of time, and modulation extinction ratios versus signal frequencies for these devices were measured at the wavelengths 1.3 µm and 1.55 µm. At 1.3 µm, polarizationsensitive extinction ratio measurements were also performed. Comparative results are reported and discussed in this paper.The Y-junction MZI shows the best extinction ratio reported to date, and the MMI MZI is the first device presented in this configuration. Devices descriptionThe devices were realized by etching rib waveguides in a separation by implanted oxygen (SIMOX) SOI wafer, the cross-section being shown in Fig. 1a. SOI wafers were originally developed to solve some of the problems shown in bulk silicon electronics related to the stray capacitance between the doped regions and the substrate. The SIMOX process consists basically of two steps [12]: first, a heavy dose of oxygen is implanted on a standard silicon substrate. Actually the reference parameters are: oxygen dose of 1.8...

show abstract

Section: Measurement Results and Discussionsupporting

confidence: 68%

Section: Devices Descriptionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…A response time of 50 ns and a modulation depth of − 4.9 dB are reported in [6], while a modulation depth of 98% measured in [7].…”

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

See 3 more Smart Citations

Intensity modulation in two Mach–Zehnder interferometers using plasma dispersion in silicon-on-insulator

2001

View full text Add to dashboard Cite

show abstract

Fabrication Techniques and Materials Systems

Deen

Basu

2012

Silicon Photonics

View full text Add to dashboard Cite

Integrated Electro‐Optic Frequency Combs: Theory and Current Progress

Zhang,

Yin,

Zhang

et al. 2024

Laser & Photonics Reviews

View full text Add to dashboard Cite

Optical frequency combs (OFCs) have evolved into one of the most active areas of photonics, underpinning advancements in both fundamental science and commercial contexts. Electro‐optic modulation for OFC generation offers excellent versatility, stability, and phase coherence. With the rapid progress in micro‐nano fabrication techniques, electro‐optic frequency combs (EOFCs) have been realized on many integrated platforms, including silicon on insulator (SOI), indium phosphide (InP), and lithium niobate on insulator (LNOI). These compact, low‐cost, and energy‐efficient EOFCs support a wide range of applications. In this study, we review the theory for the generation of integrated EOFCs, summarize the demonstrations on the main integrated platforms, present applications, and envision the development directions of integrated EOFCs in view of materials, devices, and applications.

show abstract

Silicon Mach–Zehnder waveguide interferometers based on the plasma dispersion effect

Cited by 103 publications

References 12 publications

Intensity modulation in two Mach–Zehnder interferometers using plasma dispersion in silicon-on-insulator

Intensity modulation in two Mach–Zehnder interferometers using plasma dispersion in silicon-on-insulator

Fabrication Techniques and Materials Systems

Integrated Electro‐Optic Frequency Combs: Theory and Current Progress

Contact Info

Product

Resources

About