Silicon microring resonator-loaded Mach-Zhender modulator with interleaved PN junction

Homma, Hiroyuki; Gautam, Rajdeep; Arakawa, Taro; Kimura, Yasuo

doi:10.1109/moc.2015.7416381

Cited by 3 publications

(3 citation statements)

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“…[22][23][24][25][26][27] Moreover, a nonlinear phase-shift effect in an MRR 28) has recently attracted interest, and Mach-Zehnder interferometers (MZIs) incorporating the nonlinear phase-shift effect have also been extensively studied owing to their compact size and low driving voltage. To date, compound-semiconductor-and Si-MRR-assisted MZMs (MRR-MZMs) and switches have been developed using the carrier plasma effect, [29][30][31][32][33][34][35] the thermo-optic (TO) effect, 36,37) and an electric-field induced change in the refractive index, 38,39) and many of them are driven by a pair or pairs of MRRs. Although a multiple MRR-MZM with push-pull driving is advantageous for symmetric switching and lowering driving voltage, the precise control of resonant wavelengths of two MRRs is required.…”

Section: Introductionmentioning

confidence: 99%

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32-Gbps single silicon microring resonator-loaded Mach–Zehnder modulator

Yabushita

Takazawa

Kimura

et al. 2018

Jpn. J. Appl. Phys.

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Design and high-speed modulation of a compact and low-voltage silicon microring resonator-loaded Mach-Zehnder modulator (Si MRR-MZM) with a lateral P-N junction are discussed. The driving voltage or the size of a Si MZM is expected to be significantly reduced owing to an enhanced phase shift in an MRR. Modulation characteristics of the MRR-MZM are analyzed on the basis of different device parameters, such as the coupling efficiency K and round-trip length of an MRR. Si MRR-MZMs with different device parameters are fabricated using a complementary metal-oxidesemiconductor (CMOS)-compatible process and their high-speed modulation characteristics are compared. A half-wave voltage of 3.4 V is demonstrated in an MRR-MZM with K = 0.12 and a round-trip length of 128 µm, and the product of the half-wave voltage and the length of a phase shifter (V π L) was decreased to 0.036 V cm. The 3 dB bandwidth of an MRR-MZM with K = 0.21 and a round-trip length of 180 µm is measured to be approximately 16 GHz, and nonreturn-to-zero (NRZ) modulation up to 32 Gbps is successfully demonstrated for an operation voltage of 4.0 V.

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Section: Introductionmentioning

confidence: 99%

“…In this paper, we discuss design and high-speed modulation of single Si MRR-MZMs 32,40) with different device parameters. The Si MRR-MZMs are fabricated using a CMOS-compatible process, and their high-speed modulation characteristics are compared.…”

Section: Introductionmentioning

confidence: 99%

32-Gbps single silicon microring resonator-loaded Mach–Zehnder modulator

Yabushita

Takazawa

Kimura

et al. 2018

Jpn. J. Appl. Phys.

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“…30) Owing to the combination of an MZI and the enhanced phase change in an MRR, compact and low-voltage optical modulators have been developed. [31][32][33][34][35] If an MRR-MZI is applied to biosensing, MRR-based biosensors with higher sensitivity than conventional MRR sensors can be realized.…”

Section: Introductionmentioning

confidence: 99%

Highly sensitive optical biosensor based on silicon-microring-resonator-loaded Mach–Zehnder interferometer

Yoshida

Ishihara

Arakawa

et al. 2017

Jpn. J. Appl. Phys.

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We propose and demonstrate a novel biosensor based on a silicon-single-microring-resonator-loaded Mach-Zehnder interferometer (MRR-MZI), and discuss the design of the sensor theoretically. Owing to the combination of an MZI and the enhanced phase change in a microring resonator (MRR), high sensitivity is expected to be realized. The designed MRR-MZI sensor is fabricated using a CMOS-compatible process, and its sensing characteristics are measured using ethanol solutions with a concentration of less than 3 wt % and avidin solutions. The sensitivity of the MRR-MZI to changes in the environmental refractive index is increased by approximately 50 times compared with that of a simple MRR. In addition, avidin solution with a concentration as low as 20 pM was successfully detected.

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Low V_πL_π and Driving Voltage Interleaved Silicon Phase Shifter for Modulation Applications

Begovic

Kim

Jiang³

et al. 2022

IEEE Photonics J.

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Interleaved doped Mach-Zehnder Modulators (MZMs) are one solution to attaining higher modulation efficiencies compared with lateral junction structures, due to greater modal overlap with the depletion regions of the PN junctions. In this work, we present an interleaved Si modulator device design and process simulation based on a three-step ion implantation process that aims to obtain a realistic PN junction doping profile using a Monte Carlo simulation method. A high doping concentration on the order of 5×10 18 cm −3 for the P and N regions is explored. Device simulations to track the carrier motion under different voltage biases are performed. Using equivalent medium theory, we calculated the modulation efficiency V π •L π of the interleaved Si modulator to be 0.19 V•cm under 1V reverse bias. This work is among the highest reported modulation efficiencies thus far in MZMs without photonic resonance structures.

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Silicon microring resonator-loaded Mach-Zhender modulator with interleaved PN junction

Cited by 3 publications

References 5 publications

32-Gbps single silicon microring resonator-loaded Mach–Zehnder modulator

32-Gbps single silicon microring resonator-loaded Mach–Zehnder modulator

Highly sensitive optical biosensor based on silicon-microring-resonator-loaded Mach–Zehnder interferometer

Low V_πL_π and Driving Voltage Interleaved Silicon Phase Shifter for Modulation Applications

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Silicon microring resonator-loaded Mach-Zhender modulator with interleaved PN junction

Cited by 3 publications

References 5 publications

32-Gbps single silicon microring resonator-loaded Mach–Zehnder modulator

32-Gbps single silicon microring resonator-loaded Mach–Zehnder modulator

Highly sensitive optical biosensor based on silicon-microring-resonator-loaded Mach–Zehnder interferometer

Low VπLπ and Driving Voltage Interleaved Silicon Phase Shifter for Modulation Applications

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Low V_πL_π and Driving Voltage Interleaved Silicon Phase Shifter for Modulation Applications