Silicon molecular beam epitaxy

Ota, Yusuke

doi:10.1016/0040-6090(83)90180-3

Cited by 125 publications

(18 citation statements)

References 176 publications

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“…On this surface, we model growth via atom deposition and surface diffusion, which are relevant for MBE growth. Evaporation is not considered, as it is negligible in MBE growth of Si(001) [17]. Growth is modeled by random deposition of an atom to one of the lattice sites.…”

Section: Model Descriptionmentioning

confidence: 99%

Submonolayer growth study using a solid-on-solid model for 2 × 1 reconstructed surfaces of diamond-like lattices

Ghosh

Ranganathan

2014

Surface Science

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Section: Model Descriptionmentioning

confidence: 99%

Submonolayer growth study using a solid-on-solid model for 2 × 1 reconstructed surfaces of diamond-like lattices

Ghosh

Ranganathan

2014

Surface Science

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“…We attribute the temperature dependence to some epitaxial growth of c-Si already during the deposition process [22]. This epitaxial process (molecular beam epitaxy) is, at low temperatures, limited to a critical thickness h epi [23].…”

Section: Solid Phase Epitaxymentioning

confidence: 99%

In situ excimer laser irradiation as cleaning tool for solid phase epitaxy of laser crystallized polycrystalline silicon thin films

Höger

Schmidt

Landgraf

et al. 2013

Phys. Status Solidi A

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This study demonstrates an innovative approach to clean a polycrystalline seed layer surface for solid phase epitaxy of amorphous silicon (a-Si). The excimer laser cleaning (ELC) makes use of in situ excimer laser irradiation during the first stages of a-Si deposition leading to melting of the as deposited a-Si and parts of the seed layer. The increased diffusion in liquid silicon allows for "smearing out" of surface contamination species. After liquid phase epitaxy is finished, further a-Si is deposited and crystallized by solid phase epitaxy. Thanks to the "smearing out," the interface between the crystalline and amorphous silicon exhibits less contamination locally. SIMS measurements demonstrate a reduced carbon concentration at the seed layer surface after ELC. Numerical simulations, taking into account heat transfer and temperature dependent diffusion, support the reduction of carbon concentration. The simulations agree very well with experimental results. To get optimal solid phase growth conditions, the a-Si deposition temperature has to be below 200 8C. Above 200 8C deposition temperature, defective growth occurs resulting in poor crystallinity or even in nonepitaxial growth.

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“…The number of photons absorbed per pulse, N, is 'a divided by the photon energy, e, and multiplied by the beam cross-sectional area, WH. Thus, N = knV/e, (2) where V is the volume of the beam under the substrate, which will be referred to as the "active volume", W is the beam width, and H is the beam height. The number, N, is also the number of excited Si2H6 molecules, Si2H*, in the active volume.…”

Section: Growth Kinetic Modelmentioning

confidence: 99%

<title>Laser-enhanced CVD for low-temperature Si epitaxy</title>

Banerjee

1993

Rapid Thermal and Laser Processing

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Low thermal-budget semiconductor pmcessing will have a major impact on future Ultra Large Scale Integration (UISI) and Si-based hetemstructure devices because it reduces thermal-stress-generated-defects and maintains compact doping profiles and heterolayer integrity. This paper discusses low temperature Si homoepitaxy at temperatures as low as 250 °C by photo-enhanced chemical vapor deposition (PCVD) using the photolytic decomposition of Si2H by the 193 nm emission of an ArF excimer laser in an ultra high vacuum system. Very low defect density films, in terms of stacking faults and dislocation loops (less than 105 cm2), and excellent crystallinity have been grown. The growth rates increase linearly with laser power.

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Silicon molecular beam epitaxy

Cited by 125 publications

References 176 publications

Submonolayer growth study using a solid-on-solid model for 2 × 1 reconstructed surfaces of diamond-like lattices

Submonolayer growth study using a solid-on-solid model for 2 × 1 reconstructed surfaces of diamond-like lattices

In situ excimer laser irradiation as cleaning tool for solid phase epitaxy of laser crystallized polycrystalline silicon thin films

<title>Laser-enhanced CVD for low-temperature Si epitaxy</title>

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