Silicon molecular beam epitaxy on gallium phosphide

Abstract

Si overlayers have been grown under ultrahigh vacuum conditions on GaP(100) single crystals by means of molecular beam epitaxy. For growth temperatures of 300 °C and higher (2×1) low-energy electron diffraction patterns of the Si overlayers were seen at all overlayer thicknesses produced (8–10 000 Å). By means of Auger electron spectroscopy segregation of P and Ga on top of the grown Si surface was measured. With Rutherford backscattering using ion channeling we found Si minimum channeling yields of 3% in the GaP:Si(100) heterostructures, which corresponds well to the yield of pure monocrystalline (100) Si. Two methods are described to eliminate the Ga and P segregation.

Asymmetric interface profiles in LaVO3∕SrTiO3 heterostructures grown by pulsed laser deposition

“…1-3 Advances in growth techniques, in particular, molecular beam epitaxy and pulsed laser deposition ͑PLD͒, have allowed high quality materials with complex structures, such as quantum wells and superlattices to be fabricated, sometimes with atomic-layer precision. 11,12 Although oxide heterointerfaces may be less susceptible to these effects, since they are typically grown at much lower temperatures as compared to the thermodynamic ͑melting͒ temperatures of the constituents, at the atomic scale surface segregation may still arise. Polar discontinuities that occur at many oxide heterointerfaces can drive electronic as well as atomic reconstruction at the interface.…”

Application of Positron Annihilation in the Si Integrated Circuit (IC) Industry

“…Within this time atoms will spread in a zone around the place of deposition with a mean square radius of cr2> = 4Dr,, with D, the surface diffusitivity given by the expression D, = 0.01 exp[ -E,,/kT]. With the value for the activation energy for surface diffusion of 1 eV [19,20,21] the values of cr2>'" amount to 5 x10-', 5 x10" and 8 ~l O -~c m , respectively. Thus considerable distances can be covered before the next layer is deposited.…”