“…Therefore, not only the nanocrystals, themselves, but also the insulating matrix and their interface quality are of importance to the device performance. Much of the effort to fabricate silicon nanocrystals embedded in an oxide insulating matrix has incorporated synthetic procedures that require either high temperatures and/or ultra high vacuum conditions, all of which are inappropriate for large scale processes or organic based electronics applications. , Several solution processes have been successfully established to fabricate memory devices in which pre-prepared or in-situ grown metal or semiconductor nanocrystals are embedded in a large bandgap polymer. ,− Striving to adopt these methods to fabricate silicon nanocrystal based nanocomposites, however, remains a big challenge, probably due to the difficulty in preparing stable colloidal silicon nanocrystals . Additionally, the surface chemistry of colloidal silicon nanocrystals needs to be similar with that of the polymer host matrix in order to avoid the aggregation of nanocrystals during device fabrications. , …”