Silicon nanocrystal light emitting device as a bidirectional optical transceiver

Marconi, A.; Anopchenko, Aleksei; Pucker, G.; Pavesi, L.

doi:10.1088/0268-1242/26/9/095019

Cited by 5 publications

(4 citation statements)

References 12 publications

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“…In these systems, Si-ncs act as antennas that increase by ~10 4 the effective absorption cross-section of the emitter under optical or electrical excitation [10,12,13]. Gathering all these discoveries, one can easily envision a fully Si-based microoptoelectronic circuit in which logic and memory operations are operated by Si-based memristors and/or transistors, light is emitted and detected by Si-ncs based devices [14], and guided and amplified in Si-based waveguides. Such 'all-silicon' optical circuitry would be compatible for full integration on conventional CMOS chips at a low effective cost.…”

Section: Introductionmentioning

confidence: 99%

Structural factors impacting carrier transport and electroluminescence from Si nanocluster-sensitized Er ions

Cueff¹,

Labbé²,

Jambois³

et al. 2012

Opt. Express

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Abstract:We present an analysis of factors influencing carrier transport and electroluminescence (EL) at 1.5 µm from erbium-doped silicon-rich silica (SiO x ) layers. The effects of both the active layer thickness and the Siexcess content on the electrical excitation of erbium are studied. We demonstrate that when the thickness is decreased from a few hundred to tens of nanometers the conductivity is greatly enhanced. Carrier transport is well described in all cases by a Poole-Frenkel mechanism, while the thickness-dependent current density suggests an evolution of both density and distribution of trapping states induced by Si nanoinclusions. We ascribe this observation to stress-induced effects prevailing in thin films, which inhibit the agglomeration of Si atoms, resulting in a high density of sub-nm Si inclusions that induce traps much shallower than those generated by Si nanoclusters (Si-ncs) formed in thicker films. There is no direct correlation between high conductivity and optimized EL intensity at 1.5 µm. Our results suggest that the main excitation mechanism governing the EL signal is impact excitation, which gradually becomes more efficient as film thickness increases, thanks to the increased segregation of Si-ncs, which in turn allows more efficient injection of hot electrons into the oxide matrix. Optimization of the EL signal is thus found to be a compromise between conductivity and both number and degree of segregation of Si-ncs, all of which are governed by a combination of excess Si content and sample thickness. This material study has strong implications for many electricallydriven devices using Si-ncs or Si-excess mediated EL. USSR 5, 685-687 (1938). ©2012 Optical Society of America

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Section: Introductionmentioning

confidence: 99%

Structural factors impacting carrier transport and electroluminescence from Si nanocluster-sensitized Er ions

Cueff¹,

Labbé²,

Jambois³

et al. 2012

Opt. Express

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“…Silicon is one of the most important semiconductor materials in both microelectronics [1][2][3] and photovoltaic technology [4][5][6]. The great advantages of silicon are that it is low-priced, abundant and non-toxic.…”

Section: Introductionmentioning

confidence: 99%

High-precision determination of silicon nanocrystals: optical spectroscopy versus electron microscopy

Köthemann

Weber

Lindner

et al. 2019

Semicond. Sci. Technol.

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We evaluate different approaches to determine the diameter of silicon nanoparticles in the regime of ultra-small particle sizes ( d < 5 nm ). The nanocrystals are fabricated using a plasma-enhanced chemical vapor deposition (PECVD) process and are embedded in a matrix of SiO2. For characterization, different experimental techniques can be used, ranging from optical measurements such as photoluminescence or nonlinear optical response over transmission electron microscopy. An extensive analysis leads to a high-precision size determination and a good agreement between most of the techniques. Apart from the particle size, additional information can be derived depending on the method of choice, such as exciton fine structure splitting energy, width of the particle size distribution etc. While the nonlinear signal shows the expected enhancement for smaller nanoparticle sizes, it turns out to be inadequate for determination of particle sizes with a high accuracy.

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“…One of the main drawback of silicon in photonics is its limited efficiency as light emitter, because of the indirect nature of its bandgap [5,23,24]. Yet properly engineered nanocrystalline Si (nc-Si), have partially overcome this limit and proof of concept of active Si-based photonics were demonstrated [2,5,[23][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41].…”

Section: Introductionmentioning

confidence: 99%

First synthesis of silicon nanocrystals in amorphous silicon nitride from a preceramic polymer

Biesuz¹,

Bettotti²,

Signorini³

et al. 2019

Nanotechnology

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We report the first synthesis of silicon nanocrystals embedded in a silicon nitride matrix through a direct pyrolysis of a preceramic polymer (perhydropolysilazane). Structural analysis carried out by XRD, XPS, Raman and TEM reveals the formation of silicon quantum dots and correlates the microstructures with the annealing temperature. The photoluminescence of the nanocomposites was investigated by both linear and nonlinear measurements. Furthermore we demonstrate an enhanced chemical resistance of the nitride matrix, compared to the typical oxide one, in both strongly acidic and basic environments. The proposed synthesis via polymer pyrolysis is a striking innovation potentially allowing a mass-scale production nitride embedded Si nanocrystals.

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Silicon nanocrystal light emitting device as a bidirectional optical transceiver

Cited by 5 publications

References 12 publications

Structural factors impacting carrier transport and electroluminescence from Si nanocluster-sensitized Er ions

Structural factors impacting carrier transport and electroluminescence from Si nanocluster-sensitized Er ions

High-precision determination of silicon nanocrystals: optical spectroscopy versus electron microscopy

First synthesis of silicon nanocrystals in amorphous silicon nitride from a preceramic polymer

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