“…The chemical and physical information that is currently available on the various elemental silicon systems has been obtained primarily through two significantly disparate approaches: (1) The study of ultra-low surface-area materials (~10 −4 m 2 g −1 ), using ultra-high vacuum (UHV) instrumentation and the techniques of “surface science”, that is, infra-red (IR) spectroscopy [24], scanning tunneling microscopy (STM) [25], atomic force microscopy (ATM) [26], transmission electron microscopy (TEM) [4,27], high-resolution electron energy loss spectroscopy (HREELS) [28] or X-ray photoelectron spectroscopy (XPS) [27], etc. , and (2) the study of high-surface-area materials (~10 2 m 2 g −1 ) by solid-state nuclear magnetic resonance (NMR) [13,14,15,16,17,18,19].…”