Silicon nanowire array architecture for heterojunction electronics

Solovan, M. N.; Брус, В. В.; Mostovyi, Andrii I.; Maryanchuk, P. D.; Оrletskyi, Ivan G.; Kovalyuk, T. T.; Abashin, Sergey

doi:10.1134/s1063782617040200

Cited by 2 publications

(2 citation statements)

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“…At the start of the nanowires growing the silicon substrates were washed in an ultrasonic bath in bi-distilled water and in acetone, after washing the substrates were etched in a solution of sulfuric acid and 30% of hydrogen peroxide (H 2 O 2 ) in the appropriate ratio (3:1) to remove the organic contaminants. After purification our samples were immersed in pre-prepared aqueous solutions of 0.02M AgNO 3 and of 5M HF in the ratio (1:1) for 5-10 seconds in order to deposit silver nanoparticles on the substrates [5][6].…”

Section: Experimental Partmentioning

confidence: 99%

“…The silicon-based nanostructures are attribute components of the up-to-date instrument engineering in the field of electronics, optoelectronics, chemical sensors, as well as for the conversion and accumulation of solar energy. The silicon surface, which is modified by arrays of nanowires, has a low reflection coefficient and a large active area, what allows its successful practical application [6]. Judging by the aforesaid, the creation and study of nanostructured MoOx/Si heterojunctions is of considerable scientific and practical interest.…”

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Effect of Silicon Surface Treatment on the Electrical and Photoelectric Properties of Nanostructured MoOx/n-Si Heterojunctions

Солован

Kovalyuk

Maryanchuk

2019

EEJP

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The paper presents the results of studies of the effect of silicon surface treatment on the electrical and photoelectric properties of nanostructured MoOx/n-Si heterojunctions. The nanostructured heterojunctions MoOx/n-Si, were prepared by deposition of thin films of molybdenum oxide (n-type conductivity) by reactive magnetron sputtering in the universal vacuum system Leybold Heraeus L560 on the nanostructured silicon substrates (n-type conductivity), which were made by chemical etching with the assistance of silver nanoparticles. Dark and light volt-ampere (I – V) characteristics of the heterojunctions under study were measured, the value of the potential barrier height, the values of the serial Rs and the shunt Rsh resistance at room temperature were determined. It was established that the silicon surface treatment does not affect the potential barrier height, but significantly affects the values of serial Rs and shunt Rsh resistance. The electrical and photoelectric properties of the obtained structures were investigated, the dominant mechanisms of current transfer through the heterostructures under forward bias are well described in the framework of emission-recombination and tunneling models with the presence of interface states. The main mechanism for the charge carrier transport through heterojunctions with the reverse bias is the Frenkel–Pool emission. Investigation of photoelectric properties of heterojunctions MoOx/n-Si was carried out at illumination by white light with intensity Popt = 80 mW/сm2. It was established that the heterostructure No.5 MoOx/n-Si with grown nanowires and etched silver nanoparticles has a maximum open-circuit voltage Voc = 0.17 V, short-circuit current density Isc = 10 mA/cm2. The possibilities of using the obtained heterostructures as photodiodes were analyzed.

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Section: Experimental Partmentioning

confidence: 99%

mentioning

confidence: 99%

Effect of Silicon Surface Treatment on the Electrical and Photoelectric Properties of Nanostructured MoOx/n-Si Heterojunctions

Солован

Kovalyuk

Maryanchuk

2019

EEJP

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Influence of Nanostructurization of the Silicon on the Electrical and Photoelectrical Properties of Schottky Diodes Ni/n-Si

2019

Nanosist. Nanomater. Nanotehnol.

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В даній роботі представлено результати досліджень фізичних властивостей планарних і наноструктурованих діод Шотткі Ni/n-Si, виготовлених шляхом нанесення тонких плівок Ni на планарні та наноструктуровані підкладинки кремнію методою магнетронного розпорошення при постійній напрузі. Досліджено електричні та фотоелектричні властивості одержаних діод Шотткі Ni/n-Si і встановлено домінувальні механізми струмоперенесення при прямих і зворотніх зміщеннях. Встановлено, що для планарних діод Шотткі Ni/n-Si при прямих зміщеннях в області напруг 3kT/e V 0,1 В домінувальним механізмом є надбар'єрна емісія, а в області напруг V  0,1 В -тунельний механізм струмоперенесення; для наноструктурованих діод Шотткі Ni/n-Si для початкових прямих зміщень домінувальним є емісійно-рекомбінаційний механізм струмоперенесення, а для напруг V  0,2 В -тунельний механізм струмоперенесення. При зворотніх зміщеннях для планарних і наноструктурованих діод Шотткі Ni/n-Si домінувальним механізмом струмоперенесення є тунелювання. Запропоновано нову методу визначення активної площі наноструктурованих поверхнево-бар'єрних структур. Визначено значення опору збідненої області та бар'єрної ємности досліджуваних структур. Встановлено, що досліджувані діоди Шотткі Ni/n-Sі можна успішно використовувати як фотодіоди у фотодіодному режимі роботи. This paper presents the results of studies of the physical properties of the planar and nanostructured Schottky diodes Ni/n-Si fabricated by means of the thin nickel films' deposition by the magnetron sputtering onto the planar and nanostructured substrates of n-type Si. The electrical and photoelectric properties of the Schottky diodes Ni/n-Si are investigated, and the

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Silicon nanowire array architecture for heterojunction electronics

Cited by 2 publications

References 24 publications

Effect of Silicon Surface Treatment on the Electrical and Photoelectric Properties of Nanostructured MoOx/n-Si Heterojunctions

Effect of Silicon Surface Treatment on the Electrical and Photoelectric Properties of Nanostructured MoOx/n-Si Heterojunctions

Influence of Nanostructurization of the Silicon on the Electrical and Photoelectrical Properties of Schottky Diodes Ni/n-Si

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