Silicon Nanowire Field-Effect Transistor as Biosensing Platforms for Post-Translational Modification

Su, Ping; Chen, Bo-Han; Lee, Yi-Chan; Yang, Yuh‐Shyong

doi:10.3390/bios10120213

Cited by 11 publications

(9 citation statements)

References 35 publications

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“…The inset figure represents the change in threshold voltage following each surface modification step. This result is consistent with our previous studies [ 19 , 35 ], which determine the surface modification process by measuring the electrical properties of pSiNWFET.…”

Section: Resultssupporting

confidence: 93%

“…In addition, the well-developed silicon industry is beneficial to the study of SiNWFET. Many studies have demonstrated the potential of SiNWFET for biosensing applications, including detection of nucleic acids [ 17 ], antibodies and antigens [ 18 ], and protein–protein interactions [ 19 ]. These findings revealed the benefits of SiNWFET, including ultrahigh-sensitivity, real-time, and label-free detection, making it a great potential candidate in biosensor development [ 20 , 21 ].…”

Section: Introductionmentioning

confidence: 99%

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Silicon Nanowire Field-Effect Transistor as Label-Free Detection of Hepatitis B Virus Proteins with Opposite Net Charges

et al. 2021

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The prevalence of hepatitis B virus (HBV) is a global healthcare threat, particularly chronic hepatitis B (CHB) that might lead to hepatocellular carcinoma (HCC) should not be neglected. Although many types of HBV diagnosis detection methods are available, some technical challenges, such as the high cost or lack of practical feasibility, need to be overcome. In this study, the polycrystalline silicon nanowire field-effect transistors (pSiNWFETs) were fabricated through commercial process technology and then chemically functionalized for sensing hepatitis B virus surface antigen (HBsAg) and hepatitis B virus X protein (HBx) at the femto-molar level. These two proteins have been suggested to be related to the HCC development, while the former is also the hallmark for HBV diagnosis, and the latter is an RNA-binding protein. Interestingly, these two proteins carried opposite net charges, which could serve as complementary candidates for evaluating the charge-based sensing mechanism in the pSiNWFET. The measurements on the threshold voltage shifts of pSiNWFETs showed a consistent correspondence to the polarity of the charges on the proteins studied. We believe that this report can pave the way towards developing an approachable tool for biomedical applications.

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Section: Resultssupporting

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Silicon Nanowire Field-Effect Transistor as Label-Free Detection of Hepatitis B Virus Proteins with Opposite Net Charges

et al. 2021

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“…For example, the most recent research work for the identification of SARS-CoV-2 was carried out utilizing a FET-based biosensor decorated with ultra-selective antibodies to capture viral spike proteins. It could recognize as low as 100 fg/mL of the analyte in clinical transport medium [ 157 ]. A portable immunosensor was developed for sensing HIV-1.…”

Section: Surface Modification and Functionalization Of Chem/biofetsmentioning

confidence: 99%

Recent Advances of Field-Effect Transistor Technology for Infectious Diseases

et al. 2021

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Field-effect transistor (FET) biosensors have been intensively researched toward label-free biomolecule sensing for different disease screening applications. High sensitivity, incredible miniaturization capability, promising extremely low minimum limit of detection (LoD) at the molecular level, integration with complementary metal oxide semiconductor (CMOS) technology and last but not least label-free operation were amongst the predominant motives for highlighting these sensors in the biosensor community. Although there are various diseases targeted by FET sensors for detection, infectious diseases are still the most demanding sector that needs higher precision in detection and integration for the realization of the diagnosis at the point of care (PoC). The COVID-19 pandemic, nevertheless, was an example of the escalated situation in terms of worldwide desperate need for fast, specific and reliable home test PoC devices for the timely screening of huge numbers of people to restrict the disease from further spread. This need spawned a wave of innovative approaches for early detection of COVID-19 antibodies in human swab or blood amongst which the FET biosensing gained much more attention due to their extraordinary LoD down to femtomolar (fM) with the comparatively faster response time. As the FET sensors are promising novel PoC devices with application in early diagnosis of various diseases and especially infectious diseases, in this research, we have reviewed the recent progress on developing FET sensors for infectious diseases diagnosis accompanied with a thorough discussion on the structure of Chem/BioFET sensors and the readout circuitry for output signal processing. This approach would help engineers and biologists to gain enough knowledge to initiate their design for accelerated innovations in response to the need for more efficient management of infectious diseases like COVID-19.

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“…The sensitivity of NWFET sensors can be increased by using small silicon nanowires, which increase the ratio of surface area to volume, thereby increasing sensitivity to the external environment. Numerous studies have fabricated nanoscale materials such as nanowires [ 4 , 5 , 6 ], nanotubes [ 7 , 8 ], and nanobelts [ 9 , 10 ] and applied them to biomedical sensors to increase their sensitivity.…”

Section: Introductionmentioning

confidence: 99%

Silicon Nanowires Length and Numbers Dependence on Sensitivity of the Field-Effect Transistor Sensor for Hepatitis B Virus Surface Antigen Detection

2022

Biosensors

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Silicon nanowire field effect transistor (NWFET) sensors have been demonstrated to have high sensitivity, are label free, and offer specific detection. This study explored the effect of nanowire dimensions on sensors’ sensitivity. We used sidewall spacer etching to fabricate polycrystalline silicon NWFET sensors. This method does not require expensive nanoscale exposure systems and reduces fabrication costs. We designed transistor sensors with nanowires of various lengths and numbers. Hepatitis B surface antigen (HBsAg) was used as the sensing target to explore the relationships of nanowire length and number with biomolecule detection. The experimental results revealed that the sensor with a 3 µm nanowire exhibited high sensitivity in detecting low concentrations of HBsAg. However, the sensor reached saturation when the biomolecule concentration exceeded 800 fg/mL. Sensors with 1.6 and 5 µm nanowires exhibited favorable linear sensing ranges at concentrations from 800 ag/mL to 800 pg/mL. The results regarding the number of nanowires revealed that the use of few nanowires in transistor sensors increases sensitivity. The results demonstrate the effects of nanowire dimensions on the silicon NWFET biosensors.

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Silicon Nanowire Field-Effect Transistor as Biosensing Platforms for Post-Translational Modification

Cited by 11 publications

References 35 publications

Silicon Nanowire Field-Effect Transistor as Label-Free Detection of Hepatitis B Virus Proteins with Opposite Net Charges

Silicon Nanowire Field-Effect Transistor as Label-Free Detection of Hepatitis B Virus Proteins with Opposite Net Charges

Recent Advances of Field-Effect Transistor Technology for Infectious Diseases

Silicon Nanowires Length and Numbers Dependence on Sensitivity of the Field-Effect Transistor Sensor for Hepatitis B Virus Surface Antigen Detection

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