“…Semiconducting nanowires (NWs) have the potential to act as building blocks for a variety of electronic, − photonic, − photoelectrochemical, , and photovoltaic devices. − Silicon nanowires (SiNWs) are particularly interesting due to the extensive literature on the electronic and optical properties of bulk silicon and compatibility with existing processes and architectures. NWs are made by both top-down , and bottom-up ,,− , approaches but bottom-up approaches such as the vapor–liquid–solid (VLS) method allow for a greater degree of compositional control on the nanometer scale. ,, Dopants can be introduced during VLS growth by changing the vapor-phase composition, modifying the local electronic properties and encoding a wide range of functionality. ,, However, a reservoir effect, in which dopant atoms remain dissolved in the liquid catalyst after the gas-phase dopant is removed, can occur under certain growth conditions. − This leads to a broadening of the junctions, specifically when the dopant flow is turned off, that can negatively impact device performance. Additionally, discrepancies between reaction stoichiometry, dopant incorporation, and activation at high doping levels, − inhomogeneous dopant distribution, and diameter-dependent mobility effects complicate NW design and synthesis.…”