Silicon nanowires grown by metal-catalyst-free VLS process

Ishiyama, Tomoaki; Morishima, Satoru; Ishii, Yuya; Fukuda, Mitsuo

doi:10.1063/1.4866637

Cited by 6 publications

(2 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In this method, sulfur produces vapor-phase Si sulfides by etching the Si substrate and silicon sulfide vapor is used as the vapor-phase source instead of SiH 4 , which is generally the source gas of Si in the VLS process. In contrast, we found that well-aligned Si nanowires can also be grown on a Si substrate without using any catalytic metals by using sulfur 38 . However, the crystallinity of the nanowires was not clear and a lot of nanowires with bends and kinks were observed in addition to straight and smooth nanowires.…”

mentioning

confidence: 68%

Growth of epitaxial silicon nanowires on a Si substrate by a metal-catalyst-free process

Ishiyama

Nakagawa

Wakamatsu

2016

Sci Rep

Self Cite

View full text Add to dashboard Cite

The growth of epitaxial Si nanowires by a metal-catalyst-free process has been investigated as an alternative to the more common metal-catalyzed vapor–liquid–solid process. The well-aligned Si nanowires are successfully grown on a (111)-oriented Si substrate without any metal catalysts by a thermal treatment using silicon sulfide as a Si source at approximately 1200 °C. The needle-shaped Si nanowires, which have a core–shell structure that consists of a single-crystalline Si core along the <111> direction consistent with the substrate direction and a surface coating of silicon oxide, are grown by a metal-catalyst-free process. In this process, the silicon sulfide in the liquid phase facilitates the nucleation and nanowire growth. In contrast, oxygen-rich nanowires that consist of crystalline Si at the tip and lumpy silicon oxide on the body are observed in a sample grown at 1300 °C, which disturbs the epitaxial growth of Si nanowires.

show abstract

mentioning

confidence: 68%

Growth of epitaxial silicon nanowires on a Si substrate by a metal-catalyst-free process

Ishiyama

Nakagawa

Wakamatsu

2016

Sci Rep

Self Cite

View full text Add to dashboard Cite

show abstract

“…Therefore, substitution of Au with other metals (Fe, Ni, Ag, Ti, Pt, Cu, In, Zn, Al, Co, Ga, Sn) [2], as well as sulfur [10], was also attempted. Nevertheless, those elements may also have detrimental effects on technology due to side reactions, atom migration, contamination, parasitic reflection etc., and their removal anticipates using other technological processes e.g.…”

Section: Introductionmentioning

confidence: 99%

Silicon nanowires grown on metal substrates via self-catalyst mechanism

et al. 2015

View full text Add to dashboard Cite

Contamination‐Assisted Rather Than Metal Catalyst‐Free Bottom‐Up Growth of Silicon Nanowires

Dashtestani

Moeinian

Biskupek

et al. 2021

Adv Materials Inter

View full text Add to dashboard Cite

Well‐established metal‐catalyzed vapor–liquid–solid (VLS) growth represents still undoubtedly the key technology for bottom‐up synthesis of single‐crystalline silicon nanowires (SiNWs). Although various SiNW applications are demonstrated, electrical and optical properties are exposed to the inherent risk of electronic deep trap state formation by metal impurities. Therefore, metal catalyst‐free growth strategies are intriguing. The oxid‐assisted SiNW synthesis is explored and it is shown that contamination control is absolutely crucial. Slightest metal impurities, such as iron, are sufficient to trigger SiNW growth, calling into question true metal catalyst‐free SiNW synthesis. Therefore, the term contamination‐assisted is rather introduced and it is shown that contamination‐assisted SiNW growth is determined by the chemical surface treatment (e.g., with KOH solution), but also by the crystal orientation of a silicon substrate. SiNWs are grown in this regards in a reproducible manner, but so far with a distinct tapering, using a conventional gas‐phase reactor system at temperatures of about 680 °C and monosilane (SiH4) as the precursor gas. The synthesized SiNWs show convincing electrical properties compared to Au‐catalyzed SiNWs. Nevertheless, contamination‐assisted growth of SiNWs appears to be an important step toward bottom‐up synthesis of high‐quality SiNWs with a lower risk of metal poisoning, such as those needed for CMOS and other technologies.

show abstract

Silicon nanowires grown by metal-catalyst-free VLS process

Cited by 6 publications

References 16 publications

Growth of epitaxial silicon nanowires on a Si substrate by a metal-catalyst-free process

Growth of epitaxial silicon nanowires on a Si substrate by a metal-catalyst-free process

Silicon nanowires grown on metal substrates via self-catalyst mechanism

Contamination‐Assisted Rather Than Metal Catalyst‐Free Bottom‐Up Growth of Silicon Nanowires

Contact Info

Product

Resources

About