Silicon nitride single-layer x-ray mask

Abstract

In LP-CVD process, preparation of silicon nitride film with small tensile stress and low refractive index was investigated as a function of deposition temperature and reactant gas ratio (SiH2Cl2/NH3). The small stress film with low refractive index can be prepared easily by high temperature deposition. Applying the film to an x-ray mask membrane, a new silicon nitride single-layer x-ray mask with a large area window (such as 50 mm in diameter) and high transparency to visible light is realized. Using this mask, a submicron resist pattern (0.5 μm line and space) can be replicated easily by Si–K x-ray exposure system.

Etch rates for micromachining processing

“…Low-stress silicon nitride is used for optically transparent membranes and shells [67], [68]. The refractive index rises with silicon content.…”

Determination of the density of silicon–nitride thin films by ion-beam analytical techniques (RBS, PIXE, STIM)

“…Therefore, they are widely used in microelectronic devices [1] or in micromechanical sensors [2]. They can be used as electrical insulators or a diffusion barrier when they are used as a mask [3]. Furthermore, because of their high mechanical resistance the silicon-nitride thin films are commonly used as a high-vacuum window-for example in accelerator based external ion beam applications or atmospheric scanning electron microscopy-or in nuclear physics experiments as a nitrogen and silicon standard material [4][5][6].…”

“…In this article, we report the determination of the density of some commercially available and commonly used Si 3 …”

Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia

“…As construction material or protective layer against alkaline solutions, silicon nitride Si 3 N 4 deposited by chemical vapor deposition ͑CVD͒ has not escaped this optimization. [1][2][3] In order to obtain higher deposition rate and lower tensile stress, the SiH 2 Cl 2 /NH 3 gas mixture was replaced by the SiH 4 /NH 3 one. Further improvements in deposition rate and stress were achieved by depositing silicon rich silicon nitride SiN x gave rather than stoichiometric silicon nitride Si 3 N 4 .…”