Silicon-on-Ferroelectric Insulator field effect transistor (SOFFET): Partially depleted structure for sub-60mV/decade applications

Es-Sakhi, Azzedin; Chowdhury, Masud H.

doi:10.1016/j.mssp.2015.05.056

Cited by 4 publications

(1 citation statement)

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“…Metal Oxide Thin Film Transistors (MOTFT) are a distinct class of metal-oxidesemiconductor field-effect transistors (MOSFET) fabricated by coating a layer of an active semiconductor layer, metallic contacts, and the dielectric layer over an insulating substrate. And, Printed Thin Film Transistors (TFT) are a major application of printed electronics [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. Solution processed inorganic oxide gate dielectric is key element for low voltage MOTFT.…”

Section: Introductionmentioning

confidence: 99%

Metal Oxide Thin Film Transistor with Nano Inorganic Gate Dielectric : Material Chemistry, Nanoscience, Solution Processing and Electronics

Raj¹

2021

JUSST

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Indium Lead Oxide (ILO) based Metal Oxide Thin Film Transistor (MOTFT) is fabricated with Lead Barium Zirconate (PBZ) gate dielectric. PBZ is formed over doped silicon substrate by cheap sol-gel process. Thin film PBZ is analysed with X-ray Diffraction (XRD), Ultra-Violet Visible Spectra (UV-Vis) and Atomic Force Microscope (AFM). IZO is used as bottom gate to contact Thin Film Transistor (TFT). This device needs only 5V as operating voltage, and so is good for lower electronics <40V. It shows excellent emobility 4.5cm2/V/s, with on/off ratio 5×105 and sub-threshold swing 0.35V/decade.

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