Silicon oxidation by aerial diffusion of active oxygen species from UV-irradiated TiO2

Abstract

Silicon oxidation by the aerial diffusion of active oxygen species from a UV-irradiated TiO 2 surface was evaluated and characterized. The key point was to confirm the oxidation possibility of inorganic materials such as silicon under a photocatalytic remote scheme. In this study, it was confirmed that the remote oxidation of silicon substrates would occur by the aerial diffusion of active oxygen species from UV-irradiated TiO 2 surfaces, and that the oxides have comparable properties to the thermally grown oxide. Remote oxidation using UV-irradiated TiO 2 is shown to be a viable alternative method for the fabrication of nano-scale silicon oxide.

Synthesis and Characterization of Alkylamine-Functionalized Si(111) for Perovskite Adhesion With Minimal Interfacial Oxidation or Electronic Defects

“…Critical to the formation of efficient perovskite–silicon heterojunction cells is an interconnecting recombination layer that demonstrates carrier-selective transport, strong adhesion to both the perovskite and silicon materials, and minimal deleterious state formation. Zinc, titanium, and tin oxides are typical candidates for the selective transport layer. , However, metal oxides demonstrate limited energy level tunability that may not necessarily match the “ideal” perovskite band edges, and the deposition of metal oxides may ultimately lead to oxygen diffusion into the silicon and a concomitant creation of deleterious recombination sites . Organic interconnecting layers with a wide energy level tunability that may be deposited via near-ambient temperature and pressure conditions may yield a desirable alternative to metal oxides.…”

“…6,7 However, metal oxides demonstrate limited energy level tunability that may not necessarily match the "ideal" perovskite band edges, and the deposition of metal oxides may ultimately lead to oxygen diffusion into the silicon and a concomitant creation of deleterious recombination sites. 12 Organic interconnecting layers with a wide energy level tunability that may be deposited via near-ambient temperature and pressure conditions may yield a desirable alternative to metal oxides. The organic layer should effectively passivate the silicon surface against atmospheric oxidation, as well as degradation that may occur during perovskite processing steps.…”