Silicon Oxide Permeation Barrier Coating and Plasma Sterilization of PET Bottles and Foils

Deilmann, Michael; Halfmann, Helmut; Steves, Simon; Bibinov, Nikita; Awakowicz, Peter

doi:10.1002/ppap.200930907

Cited by 55 publications

(46 citation statements)

References 33 publications

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“…The samples are placed at ground potential on the substrate holder at a distance of 100 mm to the ICP coil which has a diameter of 130 mm. The plasma fills a volume of approximately 1 L in front of the quartz window. In the MW process (see Figure b), a coaxial plasma line antenna excites a surface wave around the quartz antenna that ignites a HMDSO:

O_{2}

plasma . The setup consists of a cylindrical vacuum chamber (6 L) and a diameter of 140 mm, in which microwaves (2.45 GHz) are coupled in by the antenna at a microwave power of

P_{p l a s m a} goodbreakinfix= 1500 normalW

that is pulsed with a duty cycle

d c_{p l a s m a}

of 1:10.…”

Section: Methodsmentioning

confidence: 99%

SiO₂ microstructure evolution during plasma deposition analyzed via ellipsometric porosimetry

Buschhaus

Keudell

2019

Plasma Processes & Polymers

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The evolution of SiO2 microstructures, deposited from hexamethyldisiloxane (HMDSO) and oxygen gas mixtures by two different low pressure plasma sources, namely an inductively coupled plasma (ICP process) at 3 Pa and a microwave plasma (MW process) at 100 Pa, is evaluated and compared. The microstructure is monitored using ellipsometric porosimetry (EP) applying three different solvent molecules (water, ethanol, and toluene) to probe the different adsorption and absorption mechanisms as well as the pore sizes. Both plasma processes are adjusted so that an equivalent oxygen atom contribution to the growth flux is established and that an equivalent specific energy per molecule is dissipated in the process. The major difference is the partial pressure of the HMDSO precursor molecules, which is 0.04 Pa in the ICP process and 1 Pa in the MW process. The porosimetry analysis indicates that the SiO2 films originating from the MW process are more porous than those from the ICP process. The pore sizes are typically in the range of 0.3 nm for films deposited from both plasma processes. This is explained by assuming that the gas phase polymerization in the MW process is much stronger due to the higher HMDSO partial pressure and, therefore, the SiO2 films are deposited from larger HMDSO fragments in the MW process compared with smaller HMDSO fragments in the ICP process. This difference in the main growth species becomes visible in the different microstructures. Consequently, a plasma process using smaller precursor partial pressures seems to be optimal.

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O_{2}

plasma . The setup consists of a cylindrical vacuum chamber (6 L) and a diameter of 140 mm, in which microwaves (2.45 GHz) are coupled in by the antenna at a microwave power of

P_{p l a s m a} goodbreakinfix= 1500 normalW

that is pulsed with a duty cycle

d c_{p l a s m a}

of 1:10.…”

Section: Methodsmentioning

confidence: 99%

SiO₂ microstructure evolution during plasma deposition analyzed via ellipsometric porosimetry

Buschhaus

Keudell

2019

Plasma Processes & Polymers

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“…In this particular case it is possible that the presence of a 'semiporous' buffer layer would act not only to prevent defect-inducing plasma-surface interactions, but also to mechanically stabilize the porous PEN substrate in preparation for the deposition of the extremely thin, dense silica barrier layer. The buffer layer may function as a bridging material to reduce the high initial structural stress felt ordinarily by the two layers of differing density, thus preventing crack formation and delamination [29], of the barrier layer. Figure 5 shows the data obtained from the topographic analysis of the AFM images illustrated in Figure 4.…”

Section: Figure 1 Effective Wvtr (At 40mentioning

confidence: 99%

“…The use of an organic 'buffer layer' was previously found to be responsible for the improved adhesion of 'high barrier' silica-like coatings deposited onto polyethylene terephthalate substrates by pulsed low-pressure microwave plasmas [29]. However, it is unlikely in the case of the aforementioned silica-like bilayer films that the purpose of the inorganic porous buffer layer is merely to promote adhesion.…”

Section: Introductionmentioning

confidence: 99%

Defect prevention in silica thin films synthesized using AP-PECVD for flexible electronic encapsulation

Elam

Starostin

Meshkova

et al. 2017

J. Phys. D: Appl. Phys.

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Abstract. Industrially and commercially relevant roll-to-roll atmospheric pressure-plasma enhanced chemical vapour deposition was used to synthesize smooth, 80 nm silica-like bilayer thin films comprising a dense 'barrier layer' and comparatively porous 'buffer layer' onto a flexible polyethylene 2,6 naphthalate substrate. For both layers, tetraethyl orthosilicate was used as the precursor gas, together with a mixture of nitrogen, oxygen and argon. The bilayer films demonstrated exceptionally low effective water vapour transmission rates in the region of 6.1×10 -4 g m -2 day -1 (at 40°C, 90% relative humidity), thus capable of protecting flexible photovoltaics and thin film transistors from degradation caused by oxygen and water. The presence of the buffer layer within the bilayer architecture was mandatory in order to achieve the excellent encapsulation performance. Atomic force microscopy in addition to solvent permeation measurements, confirmed that the buffer layer prevented the formation of performance-limiting defects in the bilayer thin films, which likely occur as a result of excessive plasma-surface interactions during the deposition process. It emerged that the primary function of the buffer layer was therefore to act as a protective coating for the flexible polymer substrate material.

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“…Gas phase deposition of thin films inside cavities or on the inner surface of closed geometry with a unique orifice has already been investigated [12][13][14][15][16][17][18]. Such processes require a particular attention to hydrodynamics inside the cavities.…”

Section: Introductionmentioning

confidence: 99%

Modeling a MOCVD process to apply alumina films on the inner surface of bottles

Etchepare¹,

Vergnes²,

Samélor³

et al. 2015

Surface and Coatings Technology

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a b s t r a c tDeposition inside a cavity with a narrow neck, i.e. a hollow body, is a challenge, in particular for the supply and the evacuation of the reactive phase and of the effluents through the same entrance. High gradients (pressure, velocity, species concentrations) and important convective mechanisms related to the impacting jet of the gaseous phase on the bottom inner wall of the cavity are created in that region. Given the increasing number of experimental parameters, modeling helps efficient process optimization with better understanding of physical and chemical phenomena occurring inside the hollow body. This study presents a numerical modeling using the CFD code Fluent to simulate a direct liquid injection metalorganic chemical vapor deposition of amorphous alumina coatings from aluminum tri-isopropoxide (ATI) on the inner walls of a glass bottle. The model is used to predict local profiles of gas velocity, temperature and species concentrations into the reactor as well as local growth rate based on an apparent heterogeneous kinetic law of ATI decomposition. Comparison with experimental thickness profiles allows validating the model and leads to a better insight in the phenomena which impact film thickness inhomogeneity along the inner surface. The model contributes to the improvement of the reactor configuration by increasing the distance between nozzle and bottle and the outlet section of the nozzle.

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Silicon Oxide Permeation Barrier Coating and Plasma Sterilization of PET Bottles and Foils

Cited by 55 publications

References 33 publications

SiO₂ microstructure evolution during plasma deposition analyzed via ellipsometric porosimetry

SiO₂ microstructure evolution during plasma deposition analyzed via ellipsometric porosimetry

Defect prevention in silica thin films synthesized using AP-PECVD for flexible electronic encapsulation

Modeling a MOCVD process to apply alumina films on the inner surface of bottles

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Silicon Oxide Permeation Barrier Coating and Plasma Sterilization of PET Bottles and Foils

Cited by 55 publications

References 33 publications

SiO2 microstructure evolution during plasma deposition analyzed via ellipsometric porosimetry

SiO2 microstructure evolution during plasma deposition analyzed via ellipsometric porosimetry

Defect prevention in silica thin films synthesized using AP-PECVD for flexible electronic encapsulation

Modeling a MOCVD process to apply alumina films on the inner surface of bottles

Contact Info

Product

Resources

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SiO₂ microstructure evolution during plasma deposition analyzed via ellipsometric porosimetry

SiO₂ microstructure evolution during plasma deposition analyzed via ellipsometric porosimetry