Silicon Oxycarbide Thin films and Nanostructures: Synthesis, Properties and Applications

Abstract

Silicon oxycarbide (SiC x O y ) has been extensively investigated due to its wide use in the Si semiconductor industry in applications that include low-k dielectrics, passivation layers, and etch-stop layers. Furthermore, SiC x O y research has been exploring its prospective use in numerous other technological usages, such as lighting, energy, and biological applications. The latter include white light-emitting materials, hydrogen storage materials, gas sensors, anode materials for lithium batteries, and biomedical devices. SiC x O y materials can intensively luminescence in a broad emission spectral range that spans the ultraviolet, the visible, and even the near-infrared spectrum, when doped with erbium. Herein, we present pertinent results on the material behaviors from chemically synthesized SiC x O y thin films and nanowires. Moreover, their light-emitting properties and underlying mechanisms for light emission are explored in conjunction with data from their thin film counterparts, which are also employed as baseline comparison metric. We further highlight major challenges and promises of such materials.

Surface characteristics and optical properties of plasma deposited films on indirect aesthetic restorative dental materials

“…When these findings are combined to FTIR, wettability and SEM results, it can be inferred that PO 2 and PII groups have structural differences, even though both have a silicon-based structure, with a reduced content of C. A silica-like [50] and silicon oxycarbide-like [58] structure, respectively, are seen for these groups, while PAr coating presented a typical organosilicon structure.…”

“…The methyl groups shields the polar Si-O-Si groups vanishing their electrostatic effect on the polar water molecules. Differently occur for the PO 2 (silica-like) and PII (silicon oxy carbide-like) prepared samples, since higher proportions of methyl groups are abstracted during the deposition, thus explaining the higher affinity of these two samples towards water [49,58].…”

“…All materials studied presented a hydrophilic surface, with contact angles ranging from 29 to 66°. With the presence of the thin films deposited by plasma- [55][56][57][58][59][60][61][62][63] enhanced chemical vapor deposition (PAr and PO 2 ), the contact angle increased (to 90 and 80°, respectively). The hydrophobic nature of the surfaces treated using Ar dilution is consistent with the organosilicon nature of the films [20].…”

A novel green chemistry gelation method for polyvinyl pyrrolidone (PVP) and dimethylpolysiloxane (silicone): microwave-induced in-liquid-plasma

“…10a-i) showed the peak of Si 2p to consist of a Gaussian peak for Si 4+ (Si-O 4 ) at 102.6 eV and a Gaussian peak for Si + (Si 3 -Si-O) at 100.6 eV. 31,32 There was no corresponding peak for Si + (Si 3 -Si-O) in the XPS spectrum of the conventional silicone gel (see Fig. 10b-ii).…”

Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

“…Recently, Lin et al reported the growth of amorphous SiC x O y by very high-frequency PECVD technique [ 88 ]. An extensive review on the synthesis and properties of SiC x O y films is presented in [ 89 ]. In addition, SiCN films have been preferentially grown by PECVD methods.…”