Silicon oxynitride prepared by chemical vapor deposition as optical waveguide materials

Wong, C. K.; Wong, Hung; Kok, Chi-Wah; Chan, Mansun

doi:10.1016/j.jcrysgro.2005.12.022

Cited by 31 publications

(28 citation statements)

References 12 publications

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“…Particular measure has to be employed to reduce the hydrogen content. High temperature annealing was found to be an effective technique [11][12][13][14]. Fig.…”

Section: Resultsmentioning

confidence: 99%

“…High hydrogen content was found with oxynitride films prepared by chemical deposition method [9]. Hydrogen in oxynitride films does not only affect the refractive index but also the major source for absorption loss of light transmission in the oxynitride waveguide [4,[10][11][12]. Recent study even demonstrates that the optical loss can be reduced to below 0.2 dB/cm for slab-type silicon oxynitride waveguides by introducing phosphorus doping [13].…”

Section: Introductionmentioning

confidence: 99%

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Silicon oxynitride integrated waveguide for on-chip optical interconnects applications

Wong

Chan

et al. 2008

Microelectronics Reliability

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“…Particular measure has to be employed to reduce the hydrogen content. High temperature annealing was found to be an effective technique [11][12][13][14]. Fig.…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Silicon oxynitride integrated waveguide for on-chip optical interconnects applications

Wong

Chan

et al. 2008

Microelectronics Reliability

Self Cite

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“…4). The peaks at 397.7 and 397.2 eV have been attributed to N(−Si) 3 and those at 398.6 and 398.1 to Si-N(−H) 2 for sample S1 and sample S5 respectively [28]. Therefore only Si-centred structures need to be considered.…”

Section: Properties Of Optimized Sion Layersmentioning

confidence: 99%

“…In recent years, increasing attention has been paid to silicon based dielectrics such as silicon oxynitride (SiO x N y :H or shortly SiON) as a promising material for densely integrated optics [1][2][3][4][5]. This is mainly due to the possibility of obtaining high refractive index (n) contrast waveguiding structures for a broad wavelength range from visible to IR by changing the nitrogen/oxygen composition from SiO 2 (n = 1.46) to Si 3 N 4 (n = 2.0).…”

Section: Introductionmentioning

confidence: 99%

“…In practice preferentially use is made of plasmaenhanced chemical vapor deposition (PECVD) as it allows for relatively high deposition rates at low temperatures (b 400°C). The PECVD SiO x N y :H layers are mostly grown from nitrous oxide (N 2 O) and silane (SiH 4 /N 2 ) with optional an addition of ammonia (NH 3 ). In the present study a relation is established between the layer properties and the deposition process parameters.…”

Section: Introductionmentioning

confidence: 99%

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Optimization of plasma-enhanced chemical vapor deposition silicon oxynitride layers for integrated optics applications

et al. 2007

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Silicon oxynitride (SiO x N y :H) layers were grown from 2%SiH 4 /N 2 and N 2 O gas mixtures by plasma-enhanced chemical vapor deposition (PECVD). Layer properties such as refractive index, deposition rate, thickness non-uniformity and hydrogen bond content were correlated to the relevant deposition parameters including radio frequency power, chamber pressure, total gas flow, substrate temperature and N 2 O/SiH 4 gas flow ratio. As a result, optimized SiO x N y :H layers could be produced over a wide index range (1.46-1.70) with good thickness uniformity and sufficiently high deposition rate. With a refraction index non-uniformity b5 × 10 − 4 a thickness non-uniformity could be obtained below 1% over a 70 × 70 mm 2 area of a 100 mm wafer at a deposition rate N 50 nm/min. The material composition and the optical properties of the SiO x N y :H layers were characterized by spectroscopic ellipsometry, X-ray Photoelectron Spectroscopy, Fourier Transform Infrared spectroscopy and prism coupler techniques. A simple atomic valence model is found to describe the measured atomic concentrations for PECVD silicon oxynitride layers.

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Measurement of the condensation temperature of nanosilica powder organically modified by a silane coupling agent and its effect evaluation

Liu¹,

Zhao

2008

J of Applied Polymer Sci

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ABSTRACT:The proper condensation temperatures of nanosilica powder modified by silane coupling agents such as 3-methacryloxypropyl trimethoxy silane (MEMO), [3-(2-aminoethyl)aminopropyl] trimethoxy silane (AMMO), and bis [3-(triethoxysilyl)propyl] disulfide (TESPD) were measured with Fourier transform infrared. Moreover, the structure and properties of solution-polymerized styrenebutadiene rubber (SSBR) filled with nanosilica powder that was organically modified by the three silane coupling agents at different temperatures were investigated. The results showed that the proper condensation temperatures of nanosilica powder modified by MEMO, AMMO, and TESPD were about 80, 80, and 1008C, respectively. Compared with SSBR filled with silica powder, SSBR filled with silica powder modified by a silane coupling agent exhibited not only better filler-dispersion and mechanical properties but also lower internal friction loss in a selected range of strains. Furthermore, when the organic modification was carried out at the proper condensation temperature, the improvement of the modification effect became more obvious. Among these silane coupling agents, AMMO presented the most remarkable modification effect for nanosilica. The mechanism of modification for silica powder and its enhancement of the properties of SSBR were examined.

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Silicon oxynitride prepared by chemical vapor deposition as optical waveguide materials

Cited by 31 publications

References 12 publications

Silicon oxynitride integrated waveguide for on-chip optical interconnects applications

Silicon oxynitride integrated waveguide for on-chip optical interconnects applications

Optimization of plasma-enhanced chemical vapor deposition silicon oxynitride layers for integrated optics applications

Measurement of the condensation temperature of nanosilica powder organically modified by a silane coupling agent and its effect evaluation

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