Silicon Photodiodes in Standard CMOS Technology

Chou, Fang-Ping; Chen, Guan-Yu; Wang, Ching-Wen; Liu, Yu-Chang; Huang, Wei-Kuo; Hsin, Yue-Ming

doi:10.1109/jstqe.2010.2090343

Cited by 20 publications

(9 citation statements)

References 35 publications

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“…The reverse bias voltage could only increase to a certain limit depending on the technology in order not to jeopardize the remaining circuitry. A countless number of publications are available dealing with modified PD structures; several recently published papers should be mentioned at this point [10]- [17]. As a common outcome in those papers, either a second PD for collecting the diffusive carriers or a third layer (in most cases a deep N-well) for blocking the diffusion current generated in the deep silicon bulk were used.…”

Section: Pin Photodiodementioning

confidence: 99%

PIN Photodiode Optoelectronic Integrated Receiver Used for 3-Gb/s Free-Space Optical Communication

Brandl

Schidl

Zimmermann

2014

IEEE J. Select. Topics Quantum Electron.

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In this paper, an optoelectronic integrated receiver chip including five PIN photodiodes will be presented. A large 200-μm diameter photodiode connected to a high-speed transimpedance amplifier works as a 3-Gb/s receiver for optical wireless communication. Four surrounding photodiodes allow for the adjustment of the incoming laser ray. The complete chip was realized in a silicon 0.35-μm BiCMOS technology to benefit from the available intrinsic zone in this technology. Due to this intrinsic zone and an antireflection coating, the responsivity reaches a value of more than 0.5 A/W for wavelengths from 630 to 760 nm. Furthermore, the capacitance of the center photodiode is less than 0.6 pF for reverse bias voltages larger than 3 V. For proof of concept, a steerable and adjustable light source was built based on a micro-electro-mechanical system mirror, on a focusing unit, and on a direct modulated vertical cavity surface emitting laser with a wavelength of 680 nm. The complete system is capable of establishing a 3-Gb/s data transfer over a distance of 19 m at a BER of <10 −9 , and over a distance of 18 m at a BER of <10 −12 .

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Section: Pin Photodiodementioning

confidence: 99%

PIN Photodiode Optoelectronic Integrated Receiver Used for 3-Gb/s Free-Space Optical Communication

Brandl

Schidl

Zimmermann

2014

IEEE J. Select. Topics Quantum Electron.

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“…2 The quantum efficiency (QE) of this photodiode is found to be 15%, which is a typical number for the n+/p-well diode realized in the CMOS logic process. 28) A dark current level is also extracted by measurement of the 3T APS test circuit.…”

Section: Photodiode Characteristicsmentioning

confidence: 99%

Current-mode ambient light sensor for ultralow-power applications

Tsai¹,

King²,

Lin³

2014

Jpn. J. Appl. Phys.

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In this work, we present a novel ultralow-power ambient light sensor for distributed sensor node application. The sensor features a minimum supply voltage (<1 V) for meeting the low power requirement by a successive approximation register logic combined with progressive sizing current mirrors for analog-to-digital conversion (ADC). The current-mode operation simplifies the ADC circuit design by eliminating the capacitor array, which enables low power consumption. Furthermore, an adjustable dynamic range for indoor or outdoor sensing can be obtained by clock frequency control. This current mode sensor provides a promising solution for distributed environmental sensing modules with tight energy budget.

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“…Its desirable multiplication properties have also motivated its use as the multiplier material for infrared heterojunction APDs, such as Ge-on-Si [11]- [13], [16], or GeSn-on-Si [17] photodetectors. Other advantages of siliconbased APDs (SiAPDs) include monolithic integration with read-out integrated circuitry and compatibility with the CMOS fabrication infrastructure [18], [19], which promote high yield and high pixel densities [20].…”

Section: Introductionmentioning

confidence: 99%

Modeling the Impact of Fabrication Variabilities on the Performance of Silicon Avalanche Photodetectors

Liu,

Errico,

Alasio

et al. 2024

IEEE Photonics J.

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This work presents a systematic study of the sensitivities of silicon avalanche photodiode (APD) performance metrics, including gain, excess noise, and bandwidth, to potential variabilities in the fabrication process. The APDs simulations are performed using a state-of-the-art Full-Band Monte Carlo (FBMC) device simulator with the integrated band structure and scattering rates calculated ab−initio with density-functional theory (DFT). The focus of this work is placed on the performance of CMOS-compatible lateral transport separate-absorbermultiplier APDs (SAM APDs) fabricated on an SOI layer. The FBMC material models are validated against experimental data for carrier velocities and impact ionization coefficients, in addition to the reported APD performance of a germaniumon-silicon (Ge-on-Si) separate-absorber-charge-multiplier APD (SACM APD). The fabrication variations considered for the SAM APD include slight variations to the doping concentration and physical dimensions of the multiplier and absorber regions, as well as the thickness of the SOI layer. The results show that fabrication variations may have significant effects on the gain of the APD, but minimally affect the excess noise factor and bandwidth of the devices.

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Silicon Photodiodes in Standard CMOS Technology

Cited by 20 publications

References 35 publications

PIN Photodiode Optoelectronic Integrated Receiver Used for 3-Gb/s Free-Space Optical Communication

PIN Photodiode Optoelectronic Integrated Receiver Used for 3-Gb/s Free-Space Optical Communication

Current-mode ambient light sensor for ultralow-power applications

Modeling the Impact of Fabrication Variabilities on the Performance of Silicon Avalanche Photodetectors

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