Silicon Photomultiplier Technology at STMicroelectronics

Abstract-The response of a silicon photomultiplier (SiPM) to optical signals is inherently nonproportional due to saturation, afterpulsing, and crosstalk. Existing models of the SiPM response do not account for all of these effects, and therefore, these models are not sufficiently accurate for many applications. In this work, a comprehensive model of the SiPM response is developed that is generally applicable to exponentially decaying light pulses and that can be simplified in the case of very short (e.g., laser) light pulses. The model accounts for the total number and the temporal distribution of the incident photons as well as for the relevant SiPM parameters, viz. the recovery time, afterpulsing, crosstalk, and their cross correlations. The model is shown to correspond well with measurements on a SiPM-based scintillation detector. Furthermore, it is shown to be in agreement with several cases for which the SiPM response is known a priori. Having thus validated the model, its use is demonstrated by predicting the response of the Hamamatsu multipixel photon counter (MPPC) S10362-33-050C SiPM to several different scintillators.

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“…The current pulse then continues as of as a new exponential decay according to (5), but with replaced by . This is illustrated in Fig.…”

Section: ) Time Profile Of a Scintillation Light Pulsementioning

confidence: 99%

A Comprehensive Model of the Response of Silicon Photomultipliers

Dam

Seifert

Vinke

et al. 2010

IEEE Trans. Nucl. Sci.

107

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“…A full description of the device fabrication steps is reported in [21]. The device was inserted in an open package, placed in a socket welded on a board, where other electronic elements to correctly bias the device were allocated (miniDom [22]).…”

Section: Device Preparationmentioning

confidence: 99%

Optical and Electrical Si-Based Biosensors: Fabrication and Trasduction Issues

MF¹

2014

J Anal Bioanal Tech

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In this work we discussed feasibility studies and examples of biological molecules integration in Si-based miniaturized devices. We investigated three main issues: (i) device surface functionalization, (ii) biological molecule functionality after immobilization and (iii) biosensor working principle using both electrical and optical transduction mechanisms. In the first case the idea is to fabricate electrolyte-insulator-semiconductor (EIS) and, in the near future, ion-sensitive field effect transistor (ISFET) biosensors. The electrical characterization of MOS-like capacitors with ssDNA anchored on the SiO 2 dielectric, allowed us to conclude that the structures tested are sensitive to DNA immobilization and hybridization, as demonstrated by a positive shift in the flat band voltage after ssDNA immobilization and by a further shift after prefect match hybridization. The optical transduction mechanism, using an approach closer to commercial devices (e.g. DNA-chip) is based on the use of pixelated solid state photon-detectors (Silicon Photomultipliers, SiPM). We showed this new device can be used to replace traditional optical detector in DNA-chip applications and allows designing new optical detection systems based on photon counting operation.

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“…Only 4000 to 6000 photons are incident on the surface of a SiPM. 5,15 Moreover, the number of photons that are contributing to the output signal is even lower than these values because the PDE is less than unity and the SiPMs fabricated particularly with n+/p well structures tend to have a lower PDE than other structures. 16 As a consequence, a high density of micro-cells is not necessarily required in PET applications with aforementioned structures.…”

Section: Sensor Designmentioning

confidence: 99%

“…3 Nowadays, there are several types of commercial SiPMs produced at different fabrication centers. [4][5][6][7] We also have designed and fabricated test versions of SiPMs at National NanoFab Center (NNFC) in Korea Advanced Institute of Science and Technology (KAIST). 8,9 Compared to the commercial sensors which are for common uses, our sensor was designed for PET applications especially in terms of the size of micro-cells that will be dealt with in Sec.…”

Section: Introductionmentioning

confidence: 99%

Characterization of silicon photomultipliers at National Nano-Fab Center for PET-MR

Kim

Sul

Cho

2014

Review of Scientific Instruments

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The silicon photomultipliers (SiPMs) were fabricated for magnetic resonance compatible positron emission tomography (PET) applications using customized CMOS processes at National NanoFab Center. Each micro-cell consists of a shallow n+/p well junction on a p-type epitaxial wafer and passive quenching circuit was applied. The size of the SiPM is 3 × 3 mm(2) and the pitch of each micro-cell is 65 μm. In this work, several thousands of SiPMs were packaged and tested to build a PET ring detector which has a 60 mm axial and 390 mm radial field of view. I-V characteristics of the SiPMs are shown good uniformity and breakdown voltage is around 20 V. The photon detection efficiency was measured via photon counting method and the maximum value was recorded as 16% at 470 nm. The gamma ray spectrum of a Ge-68 isotope showed nearly 10% energy resolution at 511 keV with a 3 × 3 × 20 mm(3) LYSO crystal.

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Silicon Photomultiplier Technology at STMicroelectronics

Cited by 83 publications

References 27 publications

A Comprehensive Model of the Response of Silicon Photomultipliers

A Comprehensive Model of the Response of Silicon Photomultipliers

Optical and Electrical Si-Based Biosensors: Fabrication and Trasduction Issues

Characterization of silicon photomultipliers at National Nano-Fab Center for PET-MR

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