Silicon-Photonic Electro-Optic Phase Modulators Integrating Transparent Conducting Oxides

Sinatkas, Georgios; Kriezis, Emmanouil E.

doi:10.1109/jqe.2018.2852144

Cited by 21 publications

(15 citation statements)

References 38 publications

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“…Recently, epsilon-near-zero (ENZ) materials have attracted much attention, not only for their intriguing linear properties 9 but also because they exhibit large optical nonlinearities 10,11 . Moreover, a subset of ENZ materials, transparent conductive oxides, exhibit resonance frequencies in the near-infrared, thereby offering the potential for integrated telecom applications [12][13][14][15][16][17] . Indium tin oxide (ITO), as one example, has been shown to undergo a refractive index change of order unity upon optical pumping of a thin film 18 .…”

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confidence: 99%

All-optical switching of an epsilon-near-zero plasmon resonance in indium tin oxide

et al. 2021

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Nonlinear optical devices and their implementation into modern nanophotonic architectures are constrained by their usually moderate nonlinear response. Recently, epsilon-near-zero (ENZ) materials have been found to have a strong optical nonlinearity, which can be enhanced through the use of cavities or nano-structuring. Here, we study the pump dependent properties of the plasmon resonance in the ENZ region in a thin layer of indium tin oxide (ITO). Exciting this mode using the Kretschmann-Raether configuration, we study reflection switching properties of a 60 nm layer close to the resonant plasmon frequency. We demonstrate a thermal switching mechanism, which results in a shift in the plasmon resonance frequency of 20 THz for a TM pump intensity of 70 GW cm−2. For degenerate pump and probe frequencies, we highlight an additional two-beam coupling contribution, not previously isolated in ENZ nonlinear optics studies, which leads to an overall pump induced change in reflection from 1% to 45%.

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confidence: 99%

All-optical switching of an epsilon-near-zero plasmon resonance in indium tin oxide

et al. 2021

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“…This limits the integration density and increases the overall cost. To resolve this issue, a variety of CMOS-compatible materials such as vanadium dioxide (VO2) 6 , barium titanate (BTO) 7 , germanium antimony telluride (GST) 8 , and indium-tin-oxide (ITO) [9][10][11][12][13][14][15][16][17][18][19][20] , have been studied as the active material of optical modulators. Among these materials, ITO has drawn considerable attention because of its fast and widely tunable FCD effect and epsilon near zero (ENZ) property 10 .…”

Section: Introductionmentioning

confidence: 99%

Efficient binary and QAM optical modulation in ultra-compact MZI structures utilizing indium-tin-oxide

Mohammadi-Pouyan

Miri

Sheikhi

2022

Preprint

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A design for a CMOS-compatible active waveguide is proposed in which the epsilon-near-zero (ENZ) property of the Indium-tin-oxide (ITO) is used to induce large variations in the real and imaginary parts of the waveguide effective index. The proposed waveguide comprises a TiN/HfO2/ITO metal-oxide-semiconductor (MOS) structure where the speed and power consumption are significantly reduced by the application of the TiN and realization of double accumulation layers in the ITO. Simulations show the insertion loss (IL) of 0.38dB/µm, extinction ratio (ER) of 11dB/µm, the energy consumption of 11.87fJ/bit and electrical bandwidth of 280GHz when the designed waveguide is used as an electro-absorption modulator. The waveguide is then used in an MZI structure to design binary and quadrature-amplitude-modulator (QAM) modulators. For binary modulator, the IL, ER, and VπLπ figures of merit are found to be 1.24dB, 54dB, and 6.4V.µm, respectively, which show substantial improvement over previous ITO-based designs. In the QAM design, the symmetry in the real and imaginary parts of the waveguide effective index is employed to obviate the need for additional phase shift elements. This considerably reduces the overall length of the proposed QAM modulator and improves efficiency. Simulations show the energy consumption and bit rate, of 2fJ/bit and 560Gbps, respectively in a 4-QAM modulator with the overall length of 6.2µm. The symmetry properties of the proposed waveguide can be further exploited to realize quadrature-phase-shift-keying (QPSK) modulators which here is used in combination with the 4-QAM to propose a design for the more advanced modulation scheme of 16-QAM. The design of ITO-based QAM modulators is here reported for the first time and the abovementioned performance parameters show the unique properties of these modulators in terms of footprint, energy consumption and modulation-speed.

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“…On the other hand, the performance of slot electric-optical modulator can be further improved by sandwiching a thin ENZ film waveguide, yielding a small footprint, low insertion loss and ultrahigh modulation speed [16]. Apart from amplitude modulation, the phase-shift-based ITO ENZ on-chip optical modulation applications have been investigated [32], [33].…”

Section: Introductionmentioning

confidence: 99%

Comparison Study of Multi-Slot Designs in Epsilon-Near-Zero Waveguide-Based Electro-Optical Modulators

Sha

Xie

et al. 2021

IEEE Photonics J.

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We present a systematical comparative research on the modulation performance and the optimization of the multi-slot waveguide modulator at the telecom wavelength of 1.55 μm. It is found that the existence of epsilon-near-zero indium tin oxide slots in modulators can enhance the optical confinement, thus yielding a high extinction ratio (ER) and low insertion loss. Among the designed four types of slot modulators, the single-slot modulator exhibits the widest modulation bandwidth of 78.75 GHz and lowest energy consumption of 1.15 pJ/bit, while the dual-slot one shows the moderate performance. For the more-slot designs, the tri-slot has the advantages of a maximum figure of merit of ~ 106, and the quadri-slot one has the highest ER of 1.38 dB/μm. By integrating the multi-slot modulator on the silicon waveguide, the quadri-slot modulator waveguide exhibits broad optical bandwidth of 83 nm from 1479 to 1560 nm and large modulation depth (~ 18.3 dB). The performance of four types of slot modulators can be further improved from different aspects by the optimization of their geometric parameters. The results of this work could be useful in the design and selection of high performance on-chip modulators for optical communications and ultrafast data processing.

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Silicon-Photonic Electro-Optic Phase Modulators Integrating Transparent Conducting Oxides

Cited by 21 publications

References 38 publications

All-optical switching of an epsilon-near-zero plasmon resonance in indium tin oxide

All-optical switching of an epsilon-near-zero plasmon resonance in indium tin oxide

Efficient binary and QAM optical modulation in ultra-compact MZI structures utilizing indium-tin-oxide

Comparison Study of Multi-Slot Designs in Epsilon-Near-Zero Waveguide-Based Electro-Optical Modulators

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