Silicon photonic quantum computing with spin qubits

Yan, Xiruo; Gitt, Sebastian; Lin, Becky; Witt, Donald; Abdolahi, Mahssa; Afifi, Abdelrahman E.; Azem, Adan; Darcie, Adam; Wu, Jingda; Awan, Kashif M.; Mitchell, Matthew; Pfenning, Andreas; Chrostowski, Lukas; Young, Jeff F.

doi:10.1063/5.0049372

Cited by 32 publications

(14 citation statements)

References 241 publications

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“…Although no triplet state has been observed for the W-center, there is some evidence for mixing between the excited state and some higher-lying doubly degenerate states [15]. The T-center transitions and their potential for a spin-photon interface has been discussed in [43,44]. In the remainder of this section we focus on the excited triplet state of the G-center and its ZFS.…”

Section: Zero-field Splittingmentioning

confidence: 99%

Effect of Localization on Photoluminescence and Zero-Field Splitting of Silicon Color Centers

Ivanov¹,

Simoni²,

Lee³

et al. 2022

Preprint

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The study of defect centers in silicon has been recently reinvigorated by their potential applications in optical quantum information processing. A number of silicon defect centers emit single photons in the telecommunication O-band, making them promising building blocks for quantum networks between computing nodes. The two-carbon G-center, self-interstitial W-center, and spin-1/2 Tcenter are the most intensively studied silicon defect centers, yet despite this, there is no consensus on the precise configurations of defect atoms in these centers, and their electronic structures remain ambiguous. Here we employ ab initio density functional theory to characterize these defect centers, providing insight into the relaxed structures, bandstructures, and photoluminescence spectra, which are compared to experimental results. Motivation is provided for how these properties are intimately related to the localization of electronic states in the defect centers. In particular, we present the calculation of the zero-field splitting for the excited triplet state of the G-center defect as the structure is transformed from the A-configuration to the B-configuration, showing a sudden increase in the magnitude of the Dzz component of the zero-field splitting tensor. By performing projections onto the local orbital states of the defect, we analyze this transition in terms of the symmetry and bonding character of the G-center defect which sheds light on its potential application as a spin-photon interface.

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Section: Zero-field Splittingmentioning

confidence: 99%

Effect of Localization on Photoluminescence and Zero-Field Splitting of Silicon Color Centers

Ivanov¹,

Simoni²,

Lee³

et al. 2022

Preprint

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“…Crucially, the resulting spin-photon interface does not rely on the intrinsic optical transitions of the color centers, thereby mitigating the aforementioned problems with spectral stability [73]. Moreover, this approach is completely generic, and can be applied to color centers in other host materials [429]- [433], alongside providing a method to control optically inactive qubits [434], [435].…”

Section: A Strategies For a Universal Qubit-photon Interfacementioning

confidence: 99%

Diamond Integrated Quantum Photonics: A Review

Shandilya,

Flågan,

Carvalho

et al. 2022

Preprint

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Integrated quantum photonics devices in diamond have tremendous potential for many quantum applications, including long-distance quantum communication, quantum information processing, and quantum sensing. These devices benefit from diamond's combination of exceptional thermal, optical, and mechanical properties. Its wide electronic bandgap makes diamond an ideal host for a variety of optical active spin qubits that are key building blocks for quantum technologies. In landmark experiments, diamond spin qubits have enabled demonstrations of remote entanglement, memory-enhanced quantum communication, and multi-qubit spin registers with fault-tolerant quantum error correction, leading to the realization of multinode quantum networks. These advancements put diamond at the forefront of solid-state material platforms for quantum information processing. Recent developments in diamond nanofabrication techniques provide a promising route to further scaling of these landmark experiments towards real-life quantum technologies. In this paper, we focus on the recent progress in creating integrated diamond quantum photonic devices, with particular emphasis on spin-photon interfaces, cavity optomechanical devices, and spin-phonon transduction. Finally, we discuss prospects and remaining challenges for the use of diamond in scalable quantum technologies.

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“…There is a strong interest in controlling optically active point defects in semiconductors for applications in quantum communication [1], sensing [2], and computing [3,4]. These "quantum defects" act as artificial atoms that can couple long-lived spin states and optical photons for optical spin readout and entanglement distribution over long distances [5,6].…”

Section: Introductionmentioning

confidence: 99%

“…Well-studied quantum defects include the NV center in diamond, and the silicon divacancy in SiC, which have already demonstrated important initial steps for the development of quantum computers and sensors [1]. However, silicon has significant potential benefits over diamond as a quantum defect host including ease of scalable integration into photonic and electronic circuits [4,7,8]. In fact, color centers in silicon have a long history with numerous studies identifying and characterizing these defects prior to interest in quantum applications [9].…”

Section: Introductionmentioning

confidence: 99%

First principles study of the T-center in Silicon

Xiong¹,

Sipahigil²,

Griffin³

et al. 2022

Preprint

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The T-center in silicon is a well-known carbon-based color center that has been recently considered for quantum technology applications. Using first principles computations, we show that the excited state is formed by a defect-bound exciton made of a localized defect state occupied by an electron to which a hole is bound. The localized state is of strong carbon p character and reminiscent of the localization of the unpaired electron in the ethyl radical molecule. The radiative lifetime for the defect-bound exciton is calculated to be on the order of µs, much higher than other quantum defects such as the NV center in diamond and in agreement with experiments. The longer lifetime is associated with the small transition dipole moment as a result of the very different nature of the localized and delocalized states forming the defect-bound exciton. Finally, we use first principles calculations to assess the stability of the T-center. We find the T-center to be stable against decomposition into simpler defects when keeping the stoichiometry fixed. However, we identify dehydrogenation as a path of decomposition for the T-center, particularly during high-temperature anneals.

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Silicon photonic quantum computing with spin qubits

Cited by 32 publications

References 241 publications

Effect of Localization on Photoluminescence and Zero-Field Splitting of Silicon Color Centers

Effect of Localization on Photoluminescence and Zero-Field Splitting of Silicon Color Centers

Diamond Integrated Quantum Photonics: A Review

First principles study of the T-center in Silicon

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