Silicon Photonics: A Review of Recent Literature

Soref, Richard A.

doi:10.1007/s12633-010-9034-y

Cited by 123 publications

(52 citation statements)

References 63 publications

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“…Photonics and optoelectronics play an essential role in many areas of applications [2] as in telecommunication, information technology, and optical interconnect systems. Integration of Si-based microelectronics and optoelectronic devices would be greatly enhanced if similar facilities and technologies can be used.…”

Section: Introductionmentioning

confidence: 99%

Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes

Kasper

Oehme

Arguirov

et al. 2012

Advances in OptoElectronics

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Room temperature direct band gap emission is observed for Si-substrate-based Ge p-i-n heterojunction photodiode structures operated under forward bias. Comparisons of electroluminescence with photoluminescence spectra allow separating emission from intrinsic Ge (0.8 eV) and highly doped Ge (0.73 eV). Electroluminescence stems from carrier injection into the intrinsic layer, whereas photoluminescence originates from the highly n-doped top layer because the exciting visible laser wavelength is strongly absorbed in Ge. High doping levels led to an apparent band gap narrowing from carrier-impurity interaction. The emission shifts to higher wavelengths with increasing current level which is explained by device heating. The heterostructure layer sequence and the light emitting device are similar to earlier presented photodetectors. This is an important aspect for monolithic integration of silicon microelectronics and silicon photonics.

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Section: Introductionmentioning

confidence: 99%

Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes

Kasper

Oehme

Arguirov

et al. 2012

Advances in OptoElectronics

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“…Products of their polymerization-polysilanes and polysiloxanes-that contain Si-Si or Si-O-Si fragments possess a number of practically attractive chemical and physical properties [1][2][3][4][5]. Volatile organosilicon compounds are also famous as CVD (chemical vapor deposition) precursors for the production of silicon-containing films and ceramics [6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Thermal properties of some organosilicon precursors for chemical vapor deposition

Ermakova

Сысоев

Nikolaev

et al. 2016

J Therm Anal Calorim

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Five volatile organosilicon compounds: trimethyl (phenyl)silane Me 3 SiC 6 H 5 (I), trimethyl(cyclohexyl)silane Me 3 SiC 6 H 11 (II), trimethyl(phenoxy)silane Me 3 SiOC 6 H 5 (III), trimethyl(cyclohexyloxy)silane Me 3 SiOC 6 H 11 (IV), and trimethyl(allyloxy)silane Me 3 SiOC 3 H 5 (V) were synthesized, purified, and identified. Data of IR spectroscopy; gas-liquid chromatography; and 1 H NMR, 13 C NMR, 29 Si NMR analyses were used to identify and confirm the high purity of the compounds (more than 99.6 %). The thermal stability of the compounds was investigated by DTA-TG. The quantitative data on temperature dependences of the saturated vapor pressure of the compounds were obtained by static tensimetry method with glass membrane null manometer. The volatilities of compounds Me 3 SiOC 6 H 5 , Me 3 SiC 6 H 5 , Me 3 SiC 6 H 11 , Me 3 SiOC 6 H 11 were shown to be close due to the presence of large-size phenyl/cyclohexyl group. The replacement of phenyl/cyclohexyl group by allyl substituent in the molecule led to significant increase in volatility for Me 3 SiOC 3 H 5 in comparison with compounds mentioned before. The vapor pressure of all of the compounds is enough to use them as precursors in CVD processes without additional heating. The thermodynamic parameters (enthalpies and entropies) of vaporization processes for four compounds II-V were determined for the first time.

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“…A natural choice in terms of semiconductor materials, from the point of view of integration, points toward Si and Ge. [17][18][19] Between these two, Ge should be preferred both in standard mid-IR photonic devices, due to its inherently lower losses, and for plasmonic applications based on heavy doping, since the lower effective mass (m Ã ≈0.12 for Ge compared to m Ã ≈0.26 for Si) allows a higher plasma frequency to be reached for a given doping level.…”

Section: Introductionmentioning

confidence: 99%

Group-IV midinfrared plasmonics

et al. 2015

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Abstract. The use of heavily doped semiconductors to achieve plasma frequencies in the mid-IR has been recently proposed as a promising way to obtain high-quality and tunable plasmonic materials. We introduce a plasmonic platform based on epitaxial n-type Ge grown on standard Si wafers by means of low-energy plasma-enhanced chemical vapor deposition. Due to the large carrier concentration achieved with P dopants and to the compatibility with the existing CMOS technology, SiGe plasmonics hold promises for mid-IR applications in optoelectronics, IR detection, sensing, and light harvesting. As a representative example, we show simulations of mid-IR plasmonic waveguides based on the experimentally retrieved dielectric constants of the grown materials. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Silicon Photonics: A Review of Recent Literature

Cited by 123 publications

References 63 publications

Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes

Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes

Thermal properties of some organosilicon precursors for chemical vapor deposition

Group-IV midinfrared plasmonics

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