Silicon photonics and challenges for fabrication

Feilchenfeld, N.; Nummy, Karen; Barwicz, Tymon; Gill, Douglas M.; Kiewra, E.; Leidy, Robert; Orcutt, Jason S.; Rosenberg, J.J.; Stricker, Andy; Whiting, C.; Ayala, Javier; Cucci, B.; Dang, Daniel Le Si; Doan, T.; Ghosal, M.; Khater, Marwan; McLean, Kate; Porth, B.; Sowinski, Zoey; Willets, C.; Xiong, Chi; Yu, Christine; Yum, S.; Giewont, Ken; Green, W. M. J.

doi:10.1117/12.2263472

Cited by 9 publications

(4 citation statements)

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“…As the refractive index of α-Si is much higher than SiO2, the variation in α-Si thickness (𝑡𝑡 1 ) would expectedly affects the coupling performance more than the variations in vertical gap between Si3N4 and α-Si (𝑔𝑔 1 ) and vertical gap between α-Si and GeSi (𝑔𝑔 2 ) which are made of SiO2. Although challenging, these variations can be considered within the homogenous performance recently obtained from advanced CMOS process technology for sub-wavelength photonic structures on a Si wafer [14,[42][43][44]. The effects of variation in α-Si taper tip width (𝑤𝑤 𝑡𝑡𝑡𝑡𝑡𝑡 ), and GeSi taper tip width (𝑤𝑤 𝑡𝑡𝑡𝑡𝑡𝑡 ) are also considered in Fig.…”

Section: Coupling Performance: Results and Discussionmentioning

confidence: 99%

FDTD Investigation of Efficient and Robust Integration Between Si₃N₄ and Ge-Rich GeSi for Waveguide-Integrated Electro-Absorption Optical Modulators

et al. 2023

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Si3N4 photonic integrated circuits have gain significant and rapid interest in different photonic applications thanks to its superior passive performance. Nevertheless, optical integration between Si3N4 and Ge-based optical components remains critically challenging especially for optical modulation. In this paper, via 3D-FDTD calculations we investigate the optical integration between Si3N4 and Ge-based waveguides using vertical coupling configuration employing amorphous Si (α-Si) as an optical bridge showing efficient and robust coupling efficiency, which can be maintained according to the tolerant analysis with respect to the variations in optical wavelengths and critical parameters of the coupling structure. In addition, with respect to the recent theoretically-optimized SOI waveguide-integrated Ge-based optical modulators, we found that the studied coupling structure could be employed to enable a low-voltage Si3N4 waveguide-integrated Gebased optical modulator with a competitive extinction ratio/insertion loss performance, increasing the prospect of Si3N4-based photonic integrated circuits for low-energy optical interconnects.

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Section: Coupling Performance: Results and Discussionmentioning

confidence: 99%

FDTD Investigation of Efficient and Robust Integration Between Si₃N₄ and Ge-Rich GeSi for Waveguide-Integrated Electro-Absorption Optical Modulators

et al. 2023

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“…4(a), the responsivity values of more than 0.35 A/W can be maintained as long as the vertical position misalignment is within ± 50 nm. This tolerance can be considered relatively relaxed in view of the recent progress in advanced CMOS processing and manufacturing of photonic structures on a largescale wafer substrate [53][54][55]. It can be also mentioned that the responsivity values are significantly more sensitive to the positive variation of ∆𝑍 than the negative one.…”

Section: > Replace This Line With Your Manuscript Id Number (Double-c...mentioning

confidence: 99%

An FDTD Investigation of Compact and Low-Voltage Waveguide-Integrated Plasmonic Ge/SiGe Multiple Quantum Wells Photodetectors

et al. 2022

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We report on 3-D FDTD simulation of waveguideintegrated plasmonic Ge/SiGe MQWs photodetectors. Despite several significant works on Ge/SiGe MQW optical modulators, Ge/SiGe MQW photodetectors still show improvable performance, limiting the potential to employ them for both optical modulation and detection. In this paper, we investigate the use of plasmonic concept to enhance electromagnetic field confinement inside the Ge/SiGe MQWs absorbing region with a view to having a compact and low-voltage waveguide-integrated Ge/SiGe MQWs photodetectors. Optical responsivities in term of applied electric fields, device dimensions of width and length, optical bandwidth, fabrication misalignment, and number of QWs periods are taken into account. The investigation shows that using plasmonic enhancement, a waveguide-integrated Ge/SiGe MQWs photodetector that is as short as 5 µm could be obtained with comparable responsivity and bias voltage values to some of the state-of-the-art bulk Ge-based devices, increasing the potential usage of Ge/SiGe MQWs for both optical modulation and detection in low-energy optical interconnects.

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“…In order to overcome these limitations, immersion DUV lithography has been increasingly investigated for the fabrication of photonic devices. Immersion DUV lithography is compatible with high-volume production and, compared to dry lithography, allows to achieve a three-fold improvement in device size reproducibility, with one-sigma variations below 1% across the wafer, and an almost two times reduction of line edge roughness [24,25]. These advantages result in a better on-wafer uniformity of the device performance, reduced scattering, and lower phase errors.…”

Section: Introductionmentioning

confidence: 99%

Metamaterial-Engineered Silicon Beam Splitter Fabricated with Deep UV Immersion Lithography

et al. 2021

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Subwavelength grating (SWG) metamaterials have garnered a great interest for their singular capability to shape the material properties and the propagation of light, allowing the realization of devices with unprecedented performance. However, practical SWG implementations are limited by fabrication constraints, such as minimum feature size, that restrict the available design space or compromise compatibility with high-volume fabrication technologies. Indeed, most successful SWG realizations so far relied on electron-beam lithographic techniques, compromising the scalability of the approach. Here, we report the experimental demonstration of an SWG metamaterial engineered beam splitter fabricated with deep-ultraviolet immersion lithography in a 300-mm silicon-on-insulator technology. The metamaterial beam splitter exhibits high performance over a measured bandwidth exceeding 186 nm centered at 1550 nm. These results open a new route for the development of scalable silicon photonic circuits exploiting flexible metamaterial engineering.

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Silicon photonics and challenges for fabrication

Cited by 9 publications

References 0 publications

FDTD Investigation of Efficient and Robust Integration Between Si₃N₄ and Ge-Rich GeSi for Waveguide-Integrated Electro-Absorption Optical Modulators

FDTD Investigation of Efficient and Robust Integration Between Si₃N₄ and Ge-Rich GeSi for Waveguide-Integrated Electro-Absorption Optical Modulators

An FDTD Investigation of Compact and Low-Voltage Waveguide-Integrated Plasmonic Ge/SiGe Multiple Quantum Wells Photodetectors

Metamaterial-Engineered Silicon Beam Splitter Fabricated with Deep UV Immersion Lithography

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Silicon photonics and challenges for fabrication

Cited by 9 publications

References 0 publications

FDTD Investigation of Efficient and Robust Integration Between Si3N4 and Ge-Rich GeSi for Waveguide-Integrated Electro-Absorption Optical Modulators

FDTD Investigation of Efficient and Robust Integration Between Si3N4 and Ge-Rich GeSi for Waveguide-Integrated Electro-Absorption Optical Modulators

An FDTD Investigation of Compact and Low-Voltage Waveguide-Integrated Plasmonic Ge/SiGe Multiple Quantum Wells Photodetectors

Metamaterial-Engineered Silicon Beam Splitter Fabricated with Deep UV Immersion Lithography

Contact Info

Product

Resources

About

FDTD Investigation of Efficient and Robust Integration Between Si₃N₄ and Ge-Rich GeSi for Waveguide-Integrated Electro-Absorption Optical Modulators

FDTD Investigation of Efficient and Robust Integration Between Si₃N₄ and Ge-Rich GeSi for Waveguide-Integrated Electro-Absorption Optical Modulators