Silicon Processing

Wilkes, J. G.

doi:10.1002/9783527611805.ch1

Cited by 1 publication

(1 citation statement)

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“…Of particular importance to epitaxial growth in the semiconductor industry is silicon (Si). In addition to its abundance, this element can be refined to exceptional levels of quality and purity using either Czochralski crystal pulling or free float zoning [3]. The latter point making it essential to industries involved in the fabrication of integrated circuits.…”

Section: Introductionmentioning

confidence: 99%

A fast approach to measuring the thickness uniformity of a homoepilayer grown on to any type of silicon wafer

Myronov

Colston

Davies

et al. 2022

Semicond. Sci. Technol.

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Optical reflection spectroscopy techniques offer a non-destructive and fast method of measuring the thickness of silicon (Si) epilayers, enabling very fast thickness uniformity mapping across the full surface of epiwafers up to 450 mm in diameter. However, their use for undoped or low doped epilayers has traditionally been constrained by a dependence on high levels of substitutional doping in the Si wafer, at values of approximately 5 × 1019 cm−3. Whilst the high dopant concentration of this wafer creates the necessary reflectance boundary for optical reflection, their commercial availability is mainly limited to the (001) surface orientation only. Optical reflectance techniques are therefore also limited in use to this orientation. In this article, an approach to measure the thickness of a Si epilayer on any Si wafer, independent of its crystallographic orientation, doping type and value, using Fourier transform infrared reflection spectroscopy is proposed and demonstrated. Because the use of non-destructive optical reflection spectroscopy is already common and well-understood within both industry and academia, this technique could easily be implemented within existing industrial and research fabrication facilities. Furthermore, this approach could be adapted, with further work, to suit other semiconductor materials and other optical reflection techniques.

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Section: Introductionmentioning

confidence: 99%