Silicon quantum dot/black silicon hybrid nanostructure for broadband reflection reduction

Rashid, Marzaini; Ahmed, Naser M.; Noor, Nur Afidah Md.; Pakhuruddin, Mohd Zamir

doi:10.1016/j.mssp.2020.105113

Cited by 9 publications

(2 citation statements)

References 28 publications

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“…It was reported that the addition of Zn powder to the electrolyte during the electrochemical etching could produce ZnO on the surface of SiQDs. The structure of the compound semiconductor is core and shell; the wider bandgap semiconductor (shell) acts as a potential barrier for the narrower bandgap (core) [34,35]. However, the production of Zn-O and Si-O-Zn can demonstrate that Zn +2 ions were successfully doped into the inner SiQDs layer and that the SiQDs layer was fully coated [35].…”

Section: Morphology and Structure Of Znpsimentioning

confidence: 99%

“…The structure of the compound semiconductor is core and shell; the wider bandgap semiconductor (shell) acts as a potential barrier for the narrower bandgap (core) [34,35]. However, the production of Zn-O and Si-O-Zn can demonstrate that Zn +2 ions were successfully doped into the inner SiQDs layer and that the SiQDs layer was fully coated [35]. Figure 5 shows the XPS profiles of the ZnPSi, which verified the presence of elements such as Zn, F, Si, and O.…”

Section: Morphology and Structure Of Znpsimentioning

confidence: 99%

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Enhancement of Temperature Fluorescence Brightness of Zn@Si Core-Shell Quantum Dots Produced via a Unified Strategy

et al. 2021

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Despite many dedicated efforts, the fabrication of high-quality ZnO-incorporated Zinc@Silicon (Zn@Si) core–shell quantum dots (ZnSiQDs) with customized properties remains challenging. In this study, we report a new record for the brightness enhancement of ZnSiQDs prepared via a unified top-down and bottom-up strategy. The top-down approach was used to produce ZnSiQDs with uniform sizes and shapes, followed by the bottom-up method for their re-growth. The influence of various NH4OH contents (15 to 25 µL) on the morphology and optical characteristics of ZnSiQDs was investigated. The ZnSiQDs were obtained from the electrochemically etched porous Si (PSi) with Zn inclusion (ZnPSi), followed by the electropolishing and sonication in acetone. EFTEM micrographs of the samples prepared without and with NH4OH revealed the existence of spherical ZnSiQDs with a mean diameter of 1.22 to 7.4 nm, respectively. The emission spectra of the ZnSiQDs (excited by 365 nm) exhibited bright blue, green, orange-yellow, and red luminescence, indicating the uniform morphology related to the strong quantum confinement ZnSiQDs. In addition, the absorption and emission of the ZnSiQDs prepared with NH4OH were enhanced by 198.8% and 132.6%, respectively. The bandgap of the ZnSiQDs conditioned without and with NH4OH was approximately 3.6 and 2.3 eV, respectively.

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Section: Morphology and Structure Of Znpsimentioning

confidence: 99%

Section: Morphology and Structure Of Znpsimentioning

confidence: 99%

Enhancement of Temperature Fluorescence Brightness of Zn@Si Core-Shell Quantum Dots Produced via a Unified Strategy

et al. 2021

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The Influence of Silicon Nanopillars Structure as the Substrate on the SnO₂‐Based Gas Sensor

Liu

Liang

et al. 2021

ChemistrySelect

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Tin dioxide (SnO2) film is fabricated on the Silicon (Si) nanopillars surface with more than 5 aspect ratio via direct current (DC) magnetron sputtering for the first time. Form the XRD curves, SnO2 film become multi‐crystalline after annealing at 750 °C with 2 hours, and the nanopillars substrates have no influence on the crystallization of the SnO2 film. For the morphology, the SnO2 film on the polished Si surface becomes from planar to plicated after annealing, while there is no morphology change of the SnO2 film on Si nanopillars surface, which proves that the Si nanopillars surface is more suitable for heat and stress release during the annealing process. After testing the gas sensor properties of the SnO2 based gas sensors, the results reveal that the nanopillars based gas sensors have the higher gas response than the planar ones no matter for ethanol or acetone, with or without Au decoration. The Si nanopillars substrate with high aspect ratio makes the SnO2 film to have a larger surface to contact with air and target gas, and to have more defects to react with O2 and reducing gas molecules, which may be a promise method to fabricate the gas sensor with high response.

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Determination of quantum size effect of colloidal SiC quantum dots by cyclic voltammetry

Olaoye,

Sani,

Ooi

et al. 2024

emergent mater.

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Silicon quantum dot/black silicon hybrid nanostructure for broadband reflection reduction

Cited by 9 publications

References 28 publications

Enhancement of Temperature Fluorescence Brightness of Zn@Si Core-Shell Quantum Dots Produced via a Unified Strategy

Enhancement of Temperature Fluorescence Brightness of Zn@Si Core-Shell Quantum Dots Produced via a Unified Strategy

The Influence of Silicon Nanopillars Structure as the Substrate on the SnO₂‐Based Gas Sensor

Determination of quantum size effect of colloidal SiC quantum dots by cyclic voltammetry

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Silicon quantum dot/black silicon hybrid nanostructure for broadband reflection reduction

Cited by 9 publications

References 28 publications

Enhancement of Temperature Fluorescence Brightness of Zn@Si Core-Shell Quantum Dots Produced via a Unified Strategy

Enhancement of Temperature Fluorescence Brightness of Zn@Si Core-Shell Quantum Dots Produced via a Unified Strategy

The Influence of Silicon Nanopillars Structure as the Substrate on the SnO2‐Based Gas Sensor

Determination of quantum size effect of colloidal SiC quantum dots by cyclic voltammetry

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The Influence of Silicon Nanopillars Structure as the Substrate on the SnO₂‐Based Gas Sensor