Silicon Quantum Integrated Circuits

Surface morphology of Ge‐modified 3C‐SiC/Si films

“…Furthermore, the thickness of the deposited Ge layer is far below the critical thickness for relaxation processes in the Si-Ge heteroepitaxial system. [53] This supports the conclusion that the observed periodic undulations originate from surface steps. By comparing Fig.…”

Scaling resonant tunnelling diodes and nanowires using SPICE modelling to optimise nanoscale performance

“…The coefficients of the model are related to the RTD characteristics as follows. C1 is proportional to the peak current; C1 for InP value is highest then the GaAs value which is also much larger than for the SiGe devices; C2 is inversely proportional to the Lorentzian width of the peak (f) [14]. The SiGe devices have a much sharper r than GaAs which is related to the lower temperatures used for the measurements of the SiGe devices but also due to the higher 2D to 2D tunneling from the quantum confinement in the source of the SiGe devices (see [15]).…”

“…The carrier concentration is estimated from ion implantation modelling and TLM data to be 4 x 10 19 cm-3 . Using the data from Schmidt [14] a 5 nm depletion width requires> 1 x 10 13 cm-2 interface traps. The difference in resistivity of the two samples is as yet understood, possibilities include redistribution of doping, removal of electron beam induced traps on the top exposed surface.…”

Boron Delta-Doping Dependence on Si/SiGe Resonant Interband Tunneling Diodes Grown by Chemical Vapor Deposition

“…However, its thickness is limited by the critical thickness; hence, a composite Si/SiGe tunneling spacer is employed. The use of quantum wells as the source of electrons and holes results in higher density-of-states at the tunneling energy for the system going from 3-D to 2-D and, hence, higher peak currents [22]. SiGe adjacent to the boron δ-doping also acts as a diffusion barrier suppressing outdiffusion of the δ-doping [23].…”