IEEE International Conference on Group IV Photonics, 2005. @Nd
DOI: 10.1109/group4.2005.1516432
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Silicon resonant cavity enhanced Schottky photodetector at 1.55 μm

Maurizio Casalino
1
,
L. Sirleto
2
,
Luigi Moretti
3
et al.

Abstract: -In this paper we propose the design of a Silicon resonant cavity enhanced Schottky photodetector based on the internal photoemission effect, working at 1.55µm, and entirely compatible with ULSI Silicon technology.

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