Silicon Sensors

Krimmel, Eberhard F.

doi:10.1007/978-3-662-09897-4_20

Cited by 2 publications

(2 citation statements)

References 15 publications

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“…In the future, historians may call this half century the Silicon Age, when they classify our time in terms of the technological development characterized by materials. Collision-dominated plasmas driven at rf have been highly developed since 1980, at the beginning of the industrial application of amorphous silicon and hard carbon deposition and of the etching of Si and SiO 2 for semiconductor fabrication [9][10][11]. These plasma processes are usually operated within the range of 1-100 Pa.…”

Section: Application Of Radio Frequency Plasmamentioning

confidence: 99%

Nonequilibrium radio frequency plasma interacting with a surface

Makabe¹,

Yagisawa²

2008

Plasma Sources Sci. Technol.

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In this paper, we discuss the successive results of our series of investigations into a two-frequency capacitively coupled plasma in CF 4 (5%)/Ar, sustained by a very high frequency source and biased by a low frequency source in a collision-dominated region. The nonequilibrium in a collisional radiofrequency plasma is studied in terms of the velocity distribution of charged particles. In the bulk plasma, especially, we discuss the velocity distribution of electrons influenced by the quantum structure of a feed gas molecule, and in the passive ion sheath, we predict the flux velocity distribution of positive ions. We then investigate the active species interacting with a patterned SiO 2 wafer surface and predict each species' contribution to the feature profile, and discuss the relationship between the pattern size and the etch rate.

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Section: Application Of Radio Frequency Plasmamentioning

confidence: 99%

Nonequilibrium radio frequency plasma interacting with a surface

Makabe¹,

Yagisawa²

2008

Plasma Sources Sci. Technol.

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“…Over the period from the mid-1980s to the mid-1990s, a number of models of lowtemperature, collisional plasma have been proposed on the basis of a fluid or particle model [4,5,[20][21][22][23][24][25]. Collisional plasmas driven at an rf power have been employed in the industry for the plasma process of amorphous silicon and hard carbon deposition, and Si and SiO 2 etching in semiconductor manufacturing [26][27][28]. It should be noted that poly-Si is basically etched using an ICP in chlorine chemistry on the surface, while SiO 2 is etched by a CCP in fluorine chemistry [3].…”

Section: Industrial Application Of Rf Plasmasmentioning

confidence: 99%

Low-pressure nonequilibrium plasma for a top-down nanoprocess

Makabe¹,

Yagisawa²

2011

Plasma Sources Sci. Technol.

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The plasma microprocess has developed in cooperation with the miniaturization and high integration of devices in semiconductor manufacturing into a top-down nanoprocess over the last decade. In this paper we present or partly review our series of investigations on a two-frequency capacitively coupled radio frequency plasma (2f-CCP) for etching, sustained by a very-high-frequency source and biased by a low-frequency source in a collisional region. In particular, the velocity distributions of electrons in a bulk plasma, and ions incident on a structured wafer surface are discussed. The plasma surface process, being competitive with etching, deposition, and sometimes charging, has two critical phenomena in etching: plasma molding at a larger structure and microloading at a smaller size. It will be demonstrated that the modeling will be capable of predicting or designing a low-pressure plasma process for etching, after the modeling of the nonequilibrium plasma structure is smoothly coupled with the modeling of the feature profile evolution. Examples of the feature profile evolution of Si, SiO 2 and organic low-k material by using a 2f-CCP in each of the feed gases are shown.

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Silicon Sensors

Cited by 2 publications

References 15 publications

Nonequilibrium radio frequency plasma interacting with a surface

Nonequilibrium radio frequency plasma interacting with a surface

Low-pressure nonequilibrium plasma for a top-down nanoprocess

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