Silicon Solar Cells: Conductive Hole‐Selective Passivating Contacts for Crystalline Silicon Solar Cells (Adv. Energy Mater. 16/2020)

Wan, Lu; Zhang, Cuili; Ge, Kunpeng; Yang, Xueliang; Li, Feng; Yan, Wensheng; Xu, Zhigao; Yang, Lin; Xu, Ying; Song, Dengyuan; Chen, Jianhui

doi:10.1002/aenm.202070071

Cited by 3 publications

(14 citation statements)

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“…Due to the limited reports on this field, Table 2 shows a comparison of the stability of polymer‐based hybrid solar cells reported earlier. [ 37,43 ] Overall, c‐Si solar cell with the PTAA‐based contact displays a much better long‐term stability, compared to that of PEDOT. The stability of PTAA‐based hole selective contact has not been previously reported in c ‐Si, and some insights can be gleaned from perovskite solar cells, in which doped PTAA is commonly used for high‐efficiency device.…”

Section: Resultsmentioning

confidence: 99%

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Polymeric Hole‐Selective Contact for Crystalline Silicon Solar Cells

Lou,

Wang,

et al. 2023

Solar RRL

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Carrier‐selective contacts based on inorganic materials (e.g., silicon layers and metal oxides) have been intensively investigated for efficient crystalline silicon (c‐Si) photovoltaics. Compared to the vacuum deposition process for inorganic films, organic semiconductors offer a simplified and low‐cost processing. Herein, solution‐processed poly[bis(4‐phenyl) (2,4,6‐trimethylphenyl) amine] (PTAA) is developed as hole‐selective contact for c‐Si solar cells. PTAA exhibits a suitable band alignment with p‐type c‐Si, featuring a small valence band offset (≈0.1 eV) and a large conduction band offset (≈2.2 eV) for effective electron blocking. PTAA combined with Al2O3 passivation interlayer is demonstrated to simultaneously offer a low contact resistivity (36.5 mΩ cm2) and a moderate surface passivation (implied open‐circuit voltage 635.6 mV) on p‐type c‐Si surface. By the implementation of a full‐area hole‐selective Al2O3/PTAA rear contact, a champion efficiency of 20.2% is achieved on the hybrid c‐Si solar cells. Herein, a guiding principle for future research on polymeric carrier‐selective contact for c‐Si solar cells is provided.

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Section: Resultsmentioning

confidence: 99%

“…The SEM images of PTAA and PTAA/Al 2 O 3 rear contacts were acquired using a field-emission SEM (Hitachi SU8010). n-Si/PEDOT:PSS/Ag/DEP [37] 16.2 14.6 300 10 mc-Si(p)/PEDOT:Nafion/Ag [43] 18.8 11.28 168 40…”

Section: Methodsmentioning

confidence: 99%

Polymeric Hole‐Selective Contact for Crystalline Silicon Solar Cells

Lou,

Wang,

et al. 2023

Solar RRL

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“…Furthermore, a PCE of 20.1% with an industrial size (245.71 cm 2 ) was also achieved and this represented a breakthrough for CNT/Si solar cells in terms of area and efficiency. [56,[107][108][109] In addition, a commercially available CNT soot was mixed with Nafion and used to replace the traditional Hebei University [ 114] CNT/Si 18.9 3 631 38.8 77.2 2019 Karlsruhe Institute of Technology [ 106] 21.4 4.8 654 39.9 82 2020 Hebei University and Karlsruhe Institute of Technology [ 105] 20.1 245.71 646 39.5 78.9 2020 Hebei University and Karlsruhe Institute of Technology [ 105] 22.04 4.4 683.4 40.38 79.9 2021 Hebei University and Karlsruhe Institute of Technology [ 115] 22.04 669.4 40.3 81.7 2022 Hebei University and Karlsruhe Institute of Technology [ 116] 23.03 6.2 679.4 41.3 82.1 2022 Hebei University and Karlsruhe Institute of Technology [ 117] back structure of PERC solar cells. [110][111][112][113] A record efficiency of 23.03% was achieved for the CNT/p-Si solar cell.…”

Section: Conductive Passivating Contact Assisted Cnt/si Solar Cells I...mentioning

confidence: 99%

“…Copyright 2020, John Wiley and Sons for Advanced Energy Materials. d) Schematic illustration of the DOS of s-SWCNTs (left) and m-SWCNTs (right) with the optical transitions between VHS [51]. Copyright 2018, John Wiley and Sons for Advanced Energy Materials.…”

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The Development of Carbon/Silicon Heterojunction Solar Cells through Interface Passivation

Chen,

Zhang,

Gao

et al. 2024

Advanced Science

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Passivating contactsin heterojunction (HJ) solar cells have shown great potential in reducing recombination losses, and thereby achieving high power conversion efficiencies in photovoltaic devices. In this direction, carbon nanomaterials have emerged as a promising option for carbon/silicon (C/Si) HJsolar cells due to their tunable band structure, wide spectral absorption, high carrier mobility, and properties such as multiple exciton generation. However, the current limitations in efficiency and active area have hindered the industrialization of these devices. In this review, they examine the progress made in overcoming these constraints and discuss the prospect of achieving high power conversion efficiency (PCE) C/Si HJ devices. A C/Si HJ solar cell is also designed by introducing an innovative interface passivation strategy to further boost the PCE and accelerate the large area preparationof C/Si devices. The physical principle, device design scheme, and performanceoptimization approaches of this passivated C/Si HJ cells are discussed. Additionally, they outline potential future pathways and directions for C/Si HJ devices, including a reduction in their cost to manufacture and their incorporation intotandem solar cells. As such, this review aims to facilitate a deeperunderstanding of C/Si HJ solar cells and provide guidance for their further development.

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Interfacial Band Engineering of Highly Efficient PEDOT:PSS/p‐Si/ZnO Heterojunction Solar Cells

Liu,

Jiang,

Fan

et al. 2024

Solar RRL

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Hybrid heterojunction solar cells (HHSCs) using different active materials as hole selective transport layer (HTL) and electron selective transport layer (ETL) show great potential in both low‐cost and high‐power conversion efficiency (PCE). Here, PEDOT:PSS/p‐Si/ZnO backcontact heterojunction solar cells were prepared using the simple low‐temperature solution method. PEDOT:PSS was introduced into p‐Si‐based solar cells as an anti‐reflective and passivation layer to optimize device performance. The effect of the work function (WF) of ZnO on device performance were investigated, and a PCE of 10.74% was achieved using low WF ZnO. In addition, the PEDOT:PSS layer was doped with Nafion, and the surface passivation quality of the p‐Si was dramatically enhanced. By optimizing the doping concentration of Nafion, the PCE of the optimized device reached 11.43%, which is currently the highest PCE for p‐Si‐based solar cells using solution method. The findings provide a simple and promising method to achieve high‐performance PEDOT:PSS/p‐Si/ZnO HHSCs.This article is protected by copyright. All rights reserved.

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Silicon Solar Cells: Conductive Hole‐Selective Passivating Contacts for Crystalline Silicon Solar Cells (Adv. Energy Mater. 16/2020)

Cited by 3 publications

References 0 publications

Polymeric Hole‐Selective Contact for Crystalline Silicon Solar Cells

Polymeric Hole‐Selective Contact for Crystalline Silicon Solar Cells

The Development of Carbon/Silicon Heterojunction Solar Cells through Interface Passivation

Interfacial Band Engineering of Highly Efficient PEDOT:PSS/p‐Si/ZnO Heterojunction Solar Cells

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