2023
DOI: 10.1049/nde2.12064
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Siloxane‐containing polyimide films with high heat resistance and low dielectric constant

Song Mo,
Lei Zhai,
Yi Liu
et al.

Abstract: A series of siloxane‐containing polyimide films (PIS) were prepared by copolymerising with rigid aromatic dianhydride, siloxane diamines and six different aromatic diamines. The effects of siloxane structures, fluorine and imide content, rigid or flexible segment on the heat resistance, moisture absorption, dielectric performance, mechanical and bonding properties were systematically studied. The results show that PIS films maintain good heat resistance with Tg between 292 and 420°C and 5% weight loss temperat… Show more

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“…In this context, low-dielectric materials have attracted much interest. Particularly, polyimide (PI) films are considered as one of the most promising candidates for the next generation of dielectrics due to their excellent thermal [6][7][8], mechanical [9,10], and dielectric properties [11][12][13][14][15], and have been applied in insulation layers, buffer coatings, and passivation layers in the microelectronics industry [16][17][18][19]. However, it is a fact that the dielectric constant of most PI films is not low enough (approximately 3.2-4.0).…”
Section: Introductionmentioning
confidence: 99%
“…In this context, low-dielectric materials have attracted much interest. Particularly, polyimide (PI) films are considered as one of the most promising candidates for the next generation of dielectrics due to their excellent thermal [6][7][8], mechanical [9,10], and dielectric properties [11][12][13][14][15], and have been applied in insulation layers, buffer coatings, and passivation layers in the microelectronics industry [16][17][18][19]. However, it is a fact that the dielectric constant of most PI films is not low enough (approximately 3.2-4.0).…”
Section: Introductionmentioning
confidence: 99%