Silver catalyzed gallium phosphide nanowires integrated on silicon and<i>in situ</i>Ag-alloying induced bandgap transition

Huang, Kangrong; Zhang, Zhang; Zhou, Qin; Liu, Liwei; Zhang, Xiaoyan; Kang, Mengyang; Zhao, Fuli; Lu, Xubing; Gao, Jinwei; Liu, Junming

doi:10.1088/0957-4484/26/25/255706

Cited by 15 publications

(19 citation statements)

References 26 publications

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“…Recently, Ag has emerged as a promising seed material for III-V semiconductor NW growth and may offer some benefits compared to Au [11][12][13][14]. Reports also suggest that another option is to engineer alloy NPs composed of two metals [15,16].…”

Section: Introductionmentioning

confidence: 99%

Annealing of Au, Ag and Au–Ag alloy nanoparticle arrays on GaAs (100) and (111)B

et al. 2017

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Part of developing new strategies for fabrications of nanowire structures involves in many cases the aid of metal nanoparticles (NPs). It is highly beneficial if one can define both diameter and position of the initial NPs and make well-defined nanowire arrays. This sets additional requirement on the NPs with respect to being able to withstand a pre-growth annealing process (i.e. de-oxidation of the III-V semiconductor surface) in an epitaxy system.Recently, it has been demonstrated that Ag may be an alternative to using Au NPs as seeds for particle-seeded nanowire fabrication. This work brings light onto the effect of annealing of Au, Ag and Au-Ag alloy NP arrays in two commonly used epitaxial systems, the Molecular Beam Epitaxy (MBE) and the Metalorganic Vapor Phase Epitaxy (MOVPE). The NP arrays are fabricated with the aid of Electron Beam Lithography on GaAs 100 and 111B wafers and the evolution of the NPs with respect to shape, size and position on the surfaces 2 are studied after annealing using Scanning Electron Microscopy (SEM). We find that while the Au NP arrays are found to be stable when annealed up to 600 °C in a MOVPE system, a diameter and pitch dependent splitting of the particles are seen for annealing in a MBE system. The Ag NP arrays are less stable, with smaller diameters (≤ 50 nm) dissolving during annealing in both epitaxial systems. In general, the mobility of the NPs is observed to differ between the two the GaAs 100 and 111B surfaces. While the initial pattern is found be intact on the GaAs 111B surface for a particular annealing process and particle type, the increased mobility of the NP on the 100 may influence the initial pre-defined positions at higher annealing temperatures. The effect of annealing on Au-Ag alloy NP arrays suggests that these NP can withstand necessary annealing conditions for a complete de-oxidation of GaAs surfaces.

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Section: Introductionmentioning

confidence: 99%

Annealing of Au, Ag and Au–Ag alloy nanoparticle arrays on GaAs (100) and (111)B

et al. 2017

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“…Recent reports suggest that Ag nanoparticles can be used to nucleate and grow NWs of InP, 52 InSb, 53 InAs, 54 and GaP. 55 Although these reports show varied yield and control of important NW properties (here meaning crystal phase and growth direction), they do suggest Ag as an interesting candidate for particle-seeded synthesis of III–V NWs in general for all of the commonly used epitaxy systems (i.e., metal–organic chemical vapor deposition/metal–organic vapor phase epitaxy, chemical beam epitaxy, and MBE). We find that GaAs NWs can indeed be grown using Ag as seed material, potentially offering some important benefits compared to Au.…”

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confidence: 99%

Silver as Seed-Particle Material for GaAs Nanowires—Dictating Crystal Phase and Growth Direction by Substrate Orientation

Lindberg

Whiticar

Dick³

et al. 2016

Nano Lett.

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Here we investigate the feasibility of silver as seed-particle material to synthesize GaAs nanowires and show that both crystal phase and growth direction can be controlled by choice of substrate orientation. A (111)B substrate orientation can be used to form vertically aligned wurtzite GaAs nanowires and a (100) substrate orientation to form vertically aligned zinc blende GaAs nanowires. A 45–50% yield of vertical nanowire growth is achieved on the (100) substrate orientation without employing any type of surface modification or nucleation strategy to promote a vertical growth direction. In addition, photoluminescence measurements reveal that the photon emission from the silver seeded wurtzite GaAs nanowires is characterized by a single and narrow emission peak at 1.52 eV.

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“…We have achieved NWs with non‐tapered morphology and uniform composition along the length by growth parameter optimization. AgNPs have also been used for growing NWs of InP, GaAs, GaP, InSb, and InAs . In a recent report, Lindberg et al demonstrated that Ag seeded growth of GaAs NWs and observed the growth of vertically aligned NWs on GaAs (100) surface.…”

Section: Introductionmentioning

confidence: 99%

Diameter‐Dependent Growth Direction of In_xGa_1−xAs Nanowires: Transition from Nanowire Growth to Substrate Etching with Silver Catalyst Size

Sarkar

Banerji

2019

Physica Status Solidi (b)

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Growth of nanowires and etching of a substrate can be undertaken simultaneously as found during the silver droplet assisted growth of InxGa1−xAs nanowires (NWs) on Ge (100) substrates by metal organic chemical vapor deposition technique. The growth direction of free standing NWs has been found to be controlled by the size of the silver nanoparticles (AgNP). Vapor–liquid–solid growth of vertical free standing NWs on Ge (100) substrates has been found possible when the average AgNP size is 180 nm without any surface treatments or nucleation steps under experimental precursor flow rates and temperature. The NWs are found to grow in 〈011〉 and 〈111〉 direction with 120 nm average catalyst size and below that size, the AgNPs are found to etch the Ge surface instead of growing NWs. Two different kinds of etching have been observed. AgNPs of 20 nm size selectively etch the Ge (100) surface resulting in inverted pyramidal holes whereas larger AgNPs do not show any selective etching characteristics, rather create cylindrical holes. The switchover from growth to etching in smaller droplet size regime has been attributed to Gibbs–Thompson effect. The results prove the efficacy of AgNPs for simultaneous nanopatterning and nanostructure growth on Ge (100) surface.

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Silver catalyzed gallium phosphide nanowires integrated on silicon andin situAg-alloying induced bandgap transition

Cited by 15 publications

References 26 publications

Annealing of Au, Ag and Au–Ag alloy nanoparticle arrays on GaAs (100) and (111)B

Annealing of Au, Ag and Au–Ag alloy nanoparticle arrays on GaAs (100) and (111)B

Silver as Seed-Particle Material for GaAs Nanowires—Dictating Crystal Phase and Growth Direction by Substrate Orientation

Diameter‐Dependent Growth Direction of In_xGa_1−xAs Nanowires: Transition from Nanowire Growth to Substrate Etching with Silver Catalyst Size

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Silver catalyzed gallium phosphide nanowires integrated on silicon andin situAg-alloying induced bandgap transition

Cited by 15 publications

References 26 publications

Annealing of Au, Ag and Au–Ag alloy nanoparticle arrays on GaAs (100) and (111)B

Annealing of Au, Ag and Au–Ag alloy nanoparticle arrays on GaAs (100) and (111)B

Silver as Seed-Particle Material for GaAs Nanowires—Dictating Crystal Phase and Growth Direction by Substrate Orientation

Diameter‐Dependent Growth Direction of InxGa1−xAs Nanowires: Transition from Nanowire Growth to Substrate Etching with Silver Catalyst Size

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Diameter‐Dependent Growth Direction of In_xGa_1−xAs Nanowires: Transition from Nanowire Growth to Substrate Etching with Silver Catalyst Size