Silver Doping Effects on ZnTe Thin Films by Thermal Evaporation Technique

Shah, Nazar Abbas; Syed, Akbar; Murrawat, A

doi:10.4172/2169-0022.1000388

Cited by 3 publications

(2 citation statements)

References 15 publications

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“…Doping is one strategy for reducing the bandgap, thus increasing visible light absorption [16]. There are several techniques available to prepare the ZnS thin films such as thermal evaporation [17,18], chemical bath deposition [19][20][21], electron beam evaporation technique [22], spray pyrolysis [23,24], sputtering technique [25], and Successive on Layer Adsorption and Reaction (SILAR) technique [26].…”

Section: Introductionmentioning

confidence: 99%

Growth of ZnS:Ag:Cu Thin Film Deposited on Glass Substrates using Thermal Evaporation Technique for Alpha-photovoltaic

Mulyani

Sujitno

Purbandari

et al. 2020

jsmi

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This paper presents the research on the growth of ZnS:Ag:Cu thin film on a glass substrate as a radio-luminescent material. The SRIM/TRIM software is used to determine the optimum thickness based on an energy deposition depth of 5.485 MeV Am 241 alpha radiation source on ZnS:Ag:Cu material. To increase the adhesive strength of the coating, initially, the glass substrate is etched using a plasma glow discharged at 280°C for 15 minutes. Multiple coatings of ZnS:Ag:Cu were etched on the glass substrate; this was carried out using a thermal evaporation technique to achieve the optimal thickness (based on SRIM/TRIM simulation). The thin film thickness was observed using a scanning electron microscope (SEM). The optical properties of the un-etched, etched glass substrate and thin-film were characterized using UV-Vis spectrometer. Based on SRIM/TRIM simulation, the optimal thickness is 22 mm which can be achieved by coating three times. From optical properties of ZnS:Ag:Cu thin film and after being analysed using Taue plot method, it is found that the energy gap of ZnS:Ag:Cu thin film is 2.48 eV. It can be concluded that the addition of Ag and Cu doped decrease the energy gap of ZnS (3.66 eV).

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Section: Introductionmentioning

confidence: 99%

Growth of ZnS:Ag:Cu Thin Film Deposited on Glass Substrates using Thermal Evaporation Technique for Alpha-photovoltaic

Mulyani

Sujitno

Purbandari

et al. 2020

jsmi

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“…Figure3(c) shows the variation of dislocation density with Ni doping concentration, it is noted that value of dislocation density decreased with respect to Ni doping because of dislocation density is inversely proportional to the crystallite size of thin films. thin film has large crystalline size, it has low dislocation density and vice versa[25]. Thus the interaction between Ni and Cd for high of Ni addition assures that the good crystallinity and no defects on the samples.…”

mentioning

confidence: 99%

Preparation and Characterization of Nickel Doped Cadmium Sulfide Nanostructure Thin Films via Spray Pyrolysis Method

Jameel

Rashed

2021

KEM

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Pure and nickel-doped cadmium sulphide (NixCd1-xS where x= 2.5%, 5%, 7.5%) nanostructure thin films were successfully prepared by spray pyrolysis method on glass substrate at 350 °C. The films characterized using X-ray crystallography diffractmeter, Scanning Electron Microscope, Atomic Force Microscope and Uv-visible analysis in order to explore the properties of thin film. Structural studies revealed that the deposited films exhibit hexagonal structure with strong intensity at (002) plane. Structural parameters such as crystallite size, strain and dislocation density were calculated for films with different doping concentration. AFM measurements showed that the average diameter increased with increasing Ni doping, where surface roughness and root mean sequre decreased with increasing Ni doping, SEM images show that thin film have been grown and converted into nanowire with increasing of Ni content.Finally, Uv-visible analysis show that the optical band gap of CdS decreased from 2.44 to 2.38 eV with increasing of Ni doping concentrations.

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Study of the Influence of Annealing Temperature on the Structural and Optical Properties of ZnTe Prepared by Vacuum Thermal Evaporation Technique

Ali¹,

Shehab²,

Maki³

2018

IHJPAS

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The ZnTe alloy was prepared as deposited thin films on the glass substrates at a thickness of 400±20 nm using vacuum evaporation technique at pressure (1 × 10-5) mbar and room temperature. Then the thin films under vacuum (2 × 10-3 mbar) were annealing at (RT,100 and 300) °C for one hour. The structural properties were studied by using X-ray diffraction and AFM, the results show that the thin films had approached the single crystalline in the direction (111) as preferred orientation of the structure zinc-blende for cubic type, with small peaks of tellurium (Te) element for all prepared thin films. The calculated crystallite size (Cs) decreased with the increase in the annealing temperature, from (25) nm before the annealing to (21) nm after the annealing. The images of atomic force microscopy of all thin films appeared a homogenous structure and high smoothness through roughness values that increased slightly from (1.4) nm to (3.4) nm. The optical properties of the ZnTe at (RT,100 and 300) °C were studied transmittance and absorbance spectrum as a function of the wavelength. The energy gap was found about (2.4) eV for the thin films before the annealing and increased slightly to (2.5) eV after annealing at 300 °C

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Silver Doping Effects on ZnTe Thin Films by Thermal Evaporation Technique

Cited by 3 publications

References 15 publications

Growth of ZnS:Ag:Cu Thin Film Deposited on Glass Substrates using Thermal Evaporation Technique for Alpha-photovoltaic

Growth of ZnS:Ag:Cu Thin Film Deposited on Glass Substrates using Thermal Evaporation Technique for Alpha-photovoltaic

Preparation and Characterization of Nickel Doped Cadmium Sulfide Nanostructure Thin Films via Spray Pyrolysis Method

Study of the Influence of Annealing Temperature on the Structural and Optical Properties of ZnTe Prepared by Vacuum Thermal Evaporation Technique

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