Silver doping of silica-hafnia waveguides containing Tb 3+ /Yb 3+ rare earths for downconversion in PV solar cells

Enrichi, Francesco; Armellini, C.; Battaglin, Giancarlo; Belluomo, F.; Belmokhtar, S.; Bouajaj, Adel; Cattaruzza, Elti; Ferrari, Maurizio; Gonella, Francesco; Łukowiak, Anna; Mardegan, Marco; Polizzi, Stefano; Pontoglio, Enrico; Righini, Giancarlo C.; Sada, Cinzia; Trave, Enrico; Żur, Lidia

doi:10.1016/j.optmat.2016.07.048

Cited by 30 publications

(7 citation statements)

References 46 publications

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“…In the last two decades, broadband and efficient sensitization of Er 3+ ions by silicon [ 17 , 18 , 19 ] or silver aggregates [ 20 , 21 , 22 , 23 , 24 , 25 ] have been reported, showing that multimers and nanoaggregates can act as energy-transfer centres to the RE 3+ ions. More recently, Ag sensitization was successfully observed in Tb 3+ [ 26 , 27 , 28 ] and Tb 3+ /Yb 3+ [ 29 ] co-doped materials. In this paper, we report the investigation of the direct interaction between Ag nanoaggregates and Yb 3+ rare earth ions in sol-gel silica-zirconia glass-ceramic (GC) waveguides.…”

Section: Introductionmentioning

confidence: 99%

Ag-Sensitized Yb3+ Emission in Glass-Ceramics

et al. 2018

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Rare earth doped materials play a very important role in the development of many photonic devices, such as optical amplifiers and lasers, frequency converters, solar concentrators, up to quantum information storage devices. Among the rare earth ions, ytterbium is certainly one of the most frequently investigated and employed. The absorption and emission properties of Yb3+ ions are related to transitions between the two energy levels 2F7/2 (ground state) and 2F5/2 (excited state), involving photon energies around 1.26 eV (980 nm). Therefore, Yb3+ cannot directly absorb UV or visible light, and it is often used in combination with other rare earth ions like Pr3+, Tm3+, and Tb3+, which act as energy transfer centres. Nevertheless, even in those co-doped materials, the absorption bandwidth can be limited, and the cross section is small. In this paper, we report a broadband and efficient energy transfer process between Ag dimers/multimers and Yb3+ ions, which results in a strong PL emission around 980 nm under UV light excitation. Silica-zirconia (70% SiO2-30% ZrO2) glass-ceramic films doped by 4 mol.% Yb3+ ions and an additional 5 mol.% of Na2O were prepared by sol-gel synthesis followed by a thermal annealing at 1000 °C. Ag introduction was then obtained by ion-exchange in a molten salt bath and the samples were subsequently annealed in air at 430 °C to induce the migration and aggregation of the metal. The structural, compositional, and optical properties were investigated, providing evidence for efficient broadband sensitization of the rare earth ions by energy transfer from Ag dimers/multimers, which could have important applications in different fields, such as PV solar cells and light-emitting near-infrared (NIR) devices.

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Section: Introductionmentioning

confidence: 99%

Ag-Sensitized Yb3+ Emission in Glass-Ceramics

et al. 2018

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“…In the past, silicon [20][21][22][23] or silver aggregates [24][25][26][27] were proven as broadband efficient sensitizers for Er 3+ ions. Ag sensitization was successfully observed also for other RE 3+ ions (Eu, Tb, Yb, Dy, Sm) [28][29][30][31][32][33][34][35][36]. In this paper, we will further investigate the interaction between Ag aggregates and Yb 3+ , analyzing the role of the glass-ceramic (GC) matrix and its crystalline structure on the optical properties of the composite material.…”

Section: Introductionmentioning

confidence: 91%

Ag-Sensitized NIR-Emitting Yb3+-Doped Glass-Ceramics

et al. 2020

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The optical photoluminescent (PL) emission of Yb3+ ions in the near infrared (NIR) spectral region at about 950–1100 nm has many potential applications, from photovoltaics to lasers and visual devices. However, due to their simple energy-level structure, Yb3+ ions cannot directly absorb UV or visible light, putting serious limits on their use as light emitters. In this paper we describe a broadband and efficient strategy for sensitizing Yb3+ ions by Ag codoping, resulting in a strong 980 nm PL emission under UV and violet-blue light excitation. Yb-doped silica–zirconia–soda glass–ceramic films were synthesized by sol-gel and dip-coating, followed by annealing at 1000 °C. Ag was then introduced by ion-exchange in a molten salt bath for 1 h at 350 °C. Different post-exchange annealing temperatures for 1 h in air at 380 °C and 430 °C were compared to investigate the possibility of migration/aggregation of the metal ions. Studies of composition showed about 1–2 wt% Ag in the exchanged samples, not modified by annealing. Structural analysis reported the stabilization of cubic zirconia by Yb-doping. Optical measurements showed that, in particular for the highest annealing temperature of 430 °C, the potential improvement of the material’s quality, which would increase the PL emission, is less relevant than Ag-aggregation, which decreases the sensitizers number, resulting in a net reduction of the PL intensity. However, all the Ag-exchanged samples showed a broadband Yb3+ sensitization by energy transfer from Ag aggregates, clearly attested by a broad photoluminescence excitation spectra after Ag-exchange, paving the way for applications in various fields, such as solar cells and NIR-emitting devices.

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“…In this context, for example, the use of Ag aggregates seems a very promising option (Figure 11a), with a broadband and efficient absorption of the whole UV-blue spectral region producing a significant Yb 3+ 980 nm NIR emission. [170,[327][328][329][330] In perspective, this is a powerful solution, considering that Ag ion-exchange is a well-known industrial process used for increasing the material refractive index in the realization of optical waveguides, [331] without affecting the optical quality of the material. [332] Besides using conversion layers or coatings, the possibility of dispersing spectral conversion phosphors inside mesoporous TiO 2 and ZnO photoelectrodes or the direct doping of these MOs by RE 3+ ions in DSSCs and PSCs was also explored.…”

Section: Moss Doping For Spectral Conversionmentioning

confidence: 99%

Opportunities from Doping of Non‐Critical Metal Oxides in Last Generation Light‐Conversion Devices

Gatti

Lamberti

Mazzaro

et al. 2021

Advanced Energy Materials

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The need to develop sustainable energy solutions is an urgent requirement for society, with the additional requirement to limit dependence on critical raw materials, within a virtuous circular economy model. In this framework, it is essential to identify new avenues for light‐conversion into clean energy and fuels exploiting largely available materials and green production methods. Metal oxide semiconductors (MOSs) emerge among other species for their remarkable environmental stability, chemical tunability, and optoelectronic properties. MOSs are often key constituents in next generation energy devices, mainly in the role of charge selective layers. Their use as light harvesters is hitherto rather limited, but progressively emerging. One of the key strategies to boost their properties involves doping, that can improve charge mobility, light absorption and tune band structures to maximize charge separation at heterojunctions. In this review, effective methods to dope MOSs and to exploit the derived benefits in relation to performance enhancement in different types of devices are identified and critically compared. The work is focused specifically on the best opportunities coming from the use of non‐critical raw materials, so as to contribute in defining an economically feasible roadmap for light conversion technologies based on these highly stable and widely available compounds.

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Silver doping of silica-hafnia waveguides containing Tb 3+ /Yb 3+ rare earths for downconversion in PV solar cells

Cited by 30 publications

References 46 publications

Ag-Sensitized Yb3+ Emission in Glass-Ceramics

Ag-Sensitized Yb3+ Emission in Glass-Ceramics

Ag-Sensitized NIR-Emitting Yb3+-Doped Glass-Ceramics

Opportunities from Doping of Non‐Critical Metal Oxides in Last Generation Light‐Conversion Devices

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