Silver oxide Schottky contacts on n-type ZnO

Abstract

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Interface trap characterization and electrical properties of Au-ZnO nanorod Schottky diodes by conductance and capacitance methods

“…Schottky barrier heights for bulk ZnO have been reported in the range from 0.6-0.8 eV. 2,4 We have a higher barrier height because the microscopic dipole contribution to the built-in potential caused by non-ideal interfacial charge transfer is, in general, accommodated in the n-ZnO/n-SiC hetero-junction. 22 The higher ideality factor value obtained is probably caused by the existence of interfacial layers or surface states and also indicates that the transport mechanism is no longer dominated by thermionic emission.…”

“…14,15 Schottky barrier heights for bulk ZnO have been reported in the range of 0.6-0.8 eV. 2,4 In low-dimensional systems, the Schottky barrier height depends not only on the work function of the metal but also on the pinning of the Fermi level by the surface states, image force lowering of the barrier, field penetration and the existence of an interfacial insulating layer; these effects change the absolute current value at low bias values by lowering the Schottky barrier. 16 Schottky devices can be used to evaluate the different semiconductor parameters, including the carrier density, the Schottky barrier height, the carrier density profile, and the band gap discontinuity.…”

“…4 In recent years, a number of process methodologies have been developed for the fabrication of reproducible high quality Schottky contacts on ZnO nanostructures, but controversies remain with regard to the Schottky barrier height and the ideality factor of the ZnO Schottky contacts. 2,[8][9][10][11] The deviations in the barrier heights and the ideality factor have been proposed as having been caused by the effects of asymmetric contacts, and the influence of the interfacial layers and/or surface states. [9][10][11][12] In fact, the surfaces of nanostructures should mostly be dominated by surface states because abundant surface states usually exist on the surfaces of these nanostructures.…”

“…1 The production of high quality ZnO nanostructure-based homojunctions has proved elusive because of difficulties in the growth of p-ZnO materials. 2 Conversely, the fabrication of heterojunctions and Schottky contacts on n-ZnO nanostructures allows the realization of these electronic devices. SiC is a good candidate for use as a substrate for ZnO nanostructure growth and further applications.…”

Electrical characteristics of palladium Schottky contacts to hydrogen peroxide treated hydrothermally grown ZnO

“…SCs can be accomplished by using a simple pre-cleaning of the ZnO samples in organic solvents [62,55], but in many cases the rectifying behavior, or the improved rectification, involves some kind of more advanced surface pretreatment: in oxygen plasma [57,54], in hydrogen peroxide [63,64], or a (NH 4 ) 2 S x solution [65], etching of the surface using HCl [66], or a soak in concentrated H 3 PO 4 followed by a dip in HCl [37]. The use of metal oxides, like AgO, as a contact material seems also to represent a valid alternative; SCs with a high barrier, Φ b ∼ 1 eV, and low ideality factors, n ∼ 1.0 − 1.1, have been obtained in this case [67]. In conclusion, among the different pre-treatments proposed, the H 2 O 2 treatment, the exposure to a remote O 2 /He plasma and the use of AgO seem to be the most promising ones so far regarding the rectifying properties of the SCs.…”