Simple analytical model for accurate switching loss calculation in power MOSFETs using non‐linearities of Miller capacitance

Abstract

A simple and accurate analytical model for the estimation of switching losses on power MOSFETs is proposed. It consists of simplifying the non‐linear behaviour of Miller capacitance as a function of voltage. Experimental results are used to validate the model in the 5–500 kHz range. The proposed analytical model is compared to other frequently used methods. Results confirm the accuracy of the proposed model in different voltage levels, using four different MOSFET part numbers, spanning three technologies: SiC, superjunction, and conventional silicon. Because of its simplicity of implementation, it is especially recommended for applications that design converters by evaluating a large database of transistor part numbers.

Analytical electro-thermal model and 3-D thermal resistance network for SMD-based printed circuit board power converters

“…To calculate the losses in high-side and low-side switches (P E2 and P E3 ), the models presented in [36], [37] are used. First, the conduction, switching, and reverse recovery losses are calculated for the ambient temperature.…”

“…To enhance the accuracy of thermal measurements, the use of a heat sink and forced ventilation are not used. This decision is made considering that the thermal resistance of a heat sink is nonlinear concerning factors such as length, number of fins, air flux, and altitude, among others [21], [36], [38], [39]. The test bench and the support box for the prototypes under test are depicted in Figure 9.…”

Projeto de Filtro LC para Volume Mínimo Considerando as Perdas no Conversor e os Tempos de Vida dos Capacitores Aplicado a uma UPS de Dupla Conversão

“…As perdas nos semicondutores podem ser estimadas, em geral, de três formas: modelos analíticos, SPICE ou análise de elementos finitos. Dentre estes, os modelos analíticos possuem a menor complexidade e maior velocidade de processamento, além de razoável acurácia [39]- [41]. Os modelos de perdas de condução e comutação apresentados em [42] são utilizados neste trabalho, e o part number FS75R07N2E4 [43] de módulo de IGBTs foi escolhido.…”

Comparative Analysis of Modulation Techniques on the Losses and Thermal Limits of Uninterruptible Power Supply Systems

“…For the calculation of conduction ( ), switching ( ) and reverse recovery ( ) losses, the models presented in [ 36 , 37 ] are used. The conduction losses are evaluated as a function of the junction temperature.…”

“…As mentioned in [ 36 , 37 , 38 , 39 , 40 ], the of the MOSFET is a function of . Thus, it is necessary to obtain thermal models that represent the temperature variation over time.…”