Simple and Accurate Circuit Simulation Model for Gallium Nitride Power Transistors

Shah, K.; Shenai, K.

doi:10.1109/ted.2012.2205691

Cited by 53 publications

(18 citation statements)

References 11 publications

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“…These devices have emerged commercially over the past few years and the UA has begun accumulating experience with them in circuit design, electronic packaging, and in compact modeling. Others have already developed some GaN device models that may enable more rapid introduction of this material into the course (18).…”

Section: Discussionmentioning

confidence: 99%

Power Semiconductor Device Modeling and Simulation

2013

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Power semiconductor devices continue to be an active area of research and development. With the emergence of wide bandgap technologies this area has blossomed over the past decade beyond silicon boundaries. A brief survey of courses available around the world on the topic of power semiconductor device modeling and simulation is provided. An exemplar course at the University of Arkansas is described to demonstrate its applicability to power electronics students interested in circuit design, controls, device design, electronic packaging, and compact modeling of devices. This course is built on model-based engineering principles that are applicable to any area of electronic design. I. IntroductionWith the advent of wide bandgap semiconductors (e.g., SiC and GaN), it is now possible to fabricate power devices with high voltage and current ratings and extremely fast dv/dt and di/dt. This is why, even in the presence of minimal parasitics, a significant amount of oscillation is observed in the switching characteristics of the circuits that employ wide bandgap power devices. Additionally, these wide bandgap devices can be effectively incorporated in numerous high temperature applications. In order to predict these oscillations and high temperature behavior as well as estimate rise and fall times, voltage breakdown phenomena, leakage current, and conduction and switching losses accurately, physics-based compact models of power devices are a must for power electronics circuits and systems simulation. The phrase 'compact models' refers to the device models created for use in circuit simulation. The 'compactness' is achieved through reasonable mathematical approximations to the two and three dimensional charge distribution and movement within the actual device as is reflected more precisely through finite-element analysis. Compact models are necessary in order to simulate circuitry that consists of tens, hundreds and even thousands of devices.

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Section: Discussionmentioning

confidence: 99%

Power Semiconductor Device Modeling and Simulation

2013

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“…Equation (3) represents the frequency-dependence of the power inductor where l 3 , l 4 and l 5 are adjusted to obtain the best model fit with the measured inductor data. This inductor circuit model was found to be necessary in order to accurately calculate the load regulation characteristics of compact DC-DC power converters and develop optimized converter designs [20]. In a subsequent publication, this power inductor circuit model will be improved to include heating effects shown in this paper.…”

Section: Power Inductor Circuit Modelingmentioning

confidence: 99%

Electro-Thermal Scaling Constraints in Chip-Scale Power Inductors

2013

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Two-dimensional (2-D) full-wave finite-element (FE) solution ofMaxwell's equations including thermal heating and heat diffusion in micro-fabricated power inductors suggests significant increase in AC resistance and eddy current losses, especially at increased power switching frequencies when conducting large currents. The simulation results indicate that severe thermal constraints arise when sourcing currents in excess of 5 amps in DC-DC power converters switching at frequencies in excess of 5 MHz. A simple circuit model is presented to evaluate the high-frequency characteristics of power inductors on efficiency and load regulation of point-of-load (POL) DC-DC power converters that utilize advanced silicon power MOSFETs and Gallium Nitride (GaN) power transistors.

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“…To accurately evaluate switching performance, many previous studies have developed behavioral models to obtain realistic characteristic curves. Such models include a power loss estimation model; (4) a simple GaN power transistor model with temperature-and frequency-dependent inductor circuits, (5) which exhibited strong static characteristics; and a model considering detailed parasitic inductance and cascode capacitance. (6,7) Other models include one with turn-off resistance that was developed for sorting device uniformity.…”

Section: Introductionmentioning

confidence: 99%

Comparing of Parasitic Capacitances on Packaged Cascode Gallium Nitride Field-effect Transistors

2018

Sensors and Materials

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In this work, we examined the electrical characteristics of laboratory-fabricated cascode gallium nitride field-effect transistors (GaN FETs) and analyzed their parasitic capacitances. The calculated results were in good agreement with the experimental results and showed that commercial GaN FETs have superior switching performance, whereas laboratory-fabricated GaN FETs require further improvement.

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Simple and Accurate Circuit Simulation Model for Gallium Nitride Power Transistors

Cited by 53 publications

References 11 publications

Power Semiconductor Device Modeling and Simulation

Power Semiconductor Device Modeling and Simulation

Electro-Thermal Scaling Constraints in Chip-Scale Power Inductors

Comparing of Parasitic Capacitances on Packaged Cascode Gallium Nitride Field-effect Transistors

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