Simple and Affordable Method for Fast Transient Measurements of SiC Devices

Garrido, David; Baraia-Etxaburu, Igor; Arza, Joseba; Barrenetxea, Manex

doi:10.1109/tpel.2019.2924358

Cited by 18 publications

(5 citation statements)

References 7 publications

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“…In order to use these devices in real power applications, their switching losses must be measured since this information is mandatory during the design process of the power converter. However, the high current and voltage derivatives of GaN devices make the measurement of the energy losses in a standard double pulse test difficult [106]. Additionally, due to the influence of the output capacitance of the GaN device, the measured switching losses are not reliable anymore [107], [108], [109].…”

Section: Brief Discussion About Challenges Related To Power Gan Devicesmentioning

confidence: 99%

Gallium Nitride Power Devices: A State of the Art Review

Udabe,

Baraia-Etxaburu,

Diez

2023

IEEE Access

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Wide Bandgap (WBG) semiconductor materials present promising electrical and thermal characteristics for Power Electronics applications. These WBG devices make it possible the development of more efficient converters with higher power densities. In contrast to Silicon Carbide (SiC) devices, Gallium Nitride (GaN) devices are several steps behind in terms of development, standardization and achievable power levels. This makes the use and integration of these devices in real power applications more challenging. Commercially available current Power GaN devices are based on lateral normally ON HEMT transistors. In order to get normally OFF power transistors, two transistor structures have been proposed: enhancement mode (e-mode) and hybrid transistors. Current E-mode transistors present a low gate threshold voltage which could lead to crosstalk problems. In contrast, hybrid transistors have higher gate threshold voltages, however, the use of a Silicon MOSFET in their structure limits their performance. The lack of a standard power GaN device makes it difficult the adoption of these promising devices by the industry. Thus, in order to facilitate the adoption of these power GaN devices, this paper presents a State of the Art of power Gallium Nitride devices focusing on their structures, basics and gate terminal requirements.INDEX TERMS GaN devices, review, wide bandgap semiconductor.

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Section: Brief Discussion About Challenges Related To Power Gan Devicesmentioning

confidence: 99%

Gallium Nitride Power Devices: A State of the Art Review

Udabe,

Baraia-Etxaburu,

Diez

2023

IEEE Access

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“…As noted in the introduction, one of the objectives is the definition of noise generators based on the experimental measurement of switching waves. In anticipation of the growing need to measure not only faster and faster transients but also oscillations or ringings that have higher frequency components than the previous ones, the specifications required for the probes are increasingly stringent in terms of parameters such as bandwidth and load introduced into the layout in the form of parasitics [51][52][53].…”

Section: Materials and Methods For Switching Waveforms Measurementmentioning

confidence: 99%

Time–Frequency Analysis of Experimental Measurements for the Determination of EMI Noise Generators in Power Converters

2022

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In the context of recent decades in which there has been great development in power electronics systems with increasingly better operating characteristics, the study of the factors that affect the behaviour of these systems in terms of electromagnetic interference (EMI) is mandatory. Within this general perspective, it is essential to know the time and frequency characteristics of the switching signals, as they are the main sources of EMI noise. This work analyses the suitability of different spectral analysis techniques, specifically short-time Fourier transform (STFT) and continuous wavelet transform (CWT), to extract the frequency characteristics of the switching signals of a converter. Thus, a test bench based on a half-bridge was designed as a preliminary step in the development of a model of noise generators. After the analysis of the main parameters of these techniques, a comparison of the results obtained was carried out. It was concluded that both techniques are considered valid and complementary; not only that, but they overcome some limitations of the fast Fourier transform (FFT) as they offer the possibility of determining which are the frequency components associated with different types of events occurring at different times.

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“…The extraction of C-V characteristics from the dynamic I-V waveforms relies on an accurate interpretation of the measurement results influenced by the layout and package parasitics. The accuracy of fast switching measurements for WBG power devices strongly depends on the bandwidth of current and voltage probes, as well as de-skewing of the probes [24]- [26]. Therefore, the measurements of high switching transients and time-delays between V ds (t), V gs (t), and I d/s (t) signals suffers from inaccuracies which are hard to avoid.…”

Section: Mosfet Capacitances Characterization: State-of-the-artmentioning

confidence: 99%

Accuracy of Three Interterminal Capacitance Models for SiC Power MOSFETs Under Fast Switching

Stark

Tsibizov

Nain

et al. 2021

IEEE Trans. Power Electron.

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This paper presents a comprehensive analysis of non-linear voltage-dependent capacitances of vertical SiC power MOSFETs with lateral channel, focusing specifically on fast switching transients. The capacitance-voltage (C-V) device characteristics, (Cgs, C gd , C ds), being dependent on both Vgs and V ds , are extracted by means of two-dimensional Technology Computer Aided Design (TCAD) simulations for a commercially available device in both off-and on-state modes. Different compact models for the power MOSFET are investigated, each employing a three inter-terminal capacitance model as typically used in power electronics. The performed analysis provides a detailed explanation for the importance of taking into account the dependence of C gd , Cgs and C ds on both of the voltages Vgs and V ds. This is especially important for fast switching transients (in the range of 10 ns) in order to accurately predict switching losses, driver losses, current and voltage slopes, as well as current and voltage delays. As direct measurements for C gd , Cgs and C ds in dependence of both Vgs and V ds are highly demanding, the results presented in this paper increase the understanding of both the underlying effects as well as of the trade-offs between accuracy and computational complexity made by simplifying device models. In turn, this information is highly beneficial for enabling accurate and computationally efficient automated design procedures for power electronics.

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Simple and Affordable Method for Fast Transient Measurements of SiC Devices

Cited by 18 publications

References 7 publications

Gallium Nitride Power Devices: A State of the Art Review

Gallium Nitride Power Devices: A State of the Art Review

Time–Frequency Analysis of Experimental Measurements for the Determination of EMI Noise Generators in Power Converters

Accuracy of Three Interterminal Capacitance Models for SiC Power MOSFETs Under Fast Switching

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