Simple and effective synthesis via sol–gel of Zn-doped ITO films and their microstructural, optical, and photoelectrochemical properties

Ghemid, M.; Gueddaoui, H.; Brahimi, R.; Trari, M.

doi:10.1007/s00339-022-05960-9

Cited by 4 publications

(4 citation statements)

References 40 publications

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“…Thus, in terms of resistivity, the experimental results of this work are lower compared to those reported in other studies. The electrical parameters such as carrier concentration and conductivity were enhanced by Zn doping, in good agreement with the most recent work regarding sol-gel Zn-doped ITO thin films [57].…”

Section: Electrical Characterization (He Measurements)supporting

confidence: 90%

“…Table 4 shows the optical and electrical properties of our undoped and Zn-doped ITO thin films in comparison with those reported in the literature. Regarding optical performance, all ITO thin films (doped and undoped) showed high values of transmittance, with the highest values being obtained for the Zn-doped ITO thin films [49,57,81,82]. These differences appeared as a result of the different synthesis and annealing conditions, which led to varying thickness and microstructure (in terms of porosity and morphology).…”

Section: Electrical Characterization (He Measurements)mentioning

confidence: 99%

“…A more recent paper presented the thermoelectric properties of Zn-doped ITO thin films with various Zn concentrations prepared using the magnetron co-sputtering method [55]. Accordingly, there are very few published papers concerning Zn-doped ITO thin films prepared using sol-gel methods [56,57].…”

Section: Introductionmentioning

confidence: 99%

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Multifunctional Zn-Doped ITO Sol–Gel Films Deposited on Different Substrates: Application as CO2-Sensing Material

et al. 2022

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Undoped and Zn-doped ITO (ITO:Zn) multifunctional thin films were successfully synthesized using the sol–gel and dipping method on three different types of substrates (glass, SiO2/glass, and Si). The effect of Zn doping on the optoelectronic, microstructural, and gas-sensing properties of the films was investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), spectroscopic ellipsometry (SE), Raman spectroscopy, Hall effect measurements (HE), and gas testing. The results showed that the optical constants, the transmission, and the carrier numbers were correlated with the substrate type and with the microstructure and the thickness of the films. The Raman study showed the formation of ITO films and the incorporation of Zn in the doped film (ITO:Zn), which was confirmed by EDX analysis. The potential use of the multifunctional sol–gel ITO and ITO:Zn thin films was proven for TCO applications or gas-sensing experiments toward CO2. The Nyquist plots and equivalent circuit for fitting the experimental data were provided. The best electrical response of the sensor in CO2 atmosphere was found at 150 °C, with activation energy of around 0.31 eV.

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Section: Electrical Characterization (He Measurements)supporting

confidence: 90%

Section: Electrical Characterization (He Measurements)mentioning

confidence: 99%

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Multifunctional Zn-Doped ITO Sol–Gel Films Deposited on Different Substrates: Application as CO2-Sensing Material

et al. 2022

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“…39 Thus, we believe that the liquid contact in the printing process mitigates the effects of the long alkyl chains and creates a good interface regardless of the existing long alkyl chains. Besides, according to the previous research relationship to the Zn-doped ITO by solution processing, 40,41 the electrical parameters, such as carrier concentration and conductivity, can be enhanced by Zn doping due to lowered film porosity. We consider this doping effect is also able to obtain good electrical characteristics.…”

Section: Resultsmentioning

confidence: 94%

Direct Patterned Printing Method of Top-Contact ITO Electrodes for Solution-Processed Metal Oxide Thin-film Transistors

Miyakawa,

Tsuji,

Nakata

2023

ACS Appl. Electron. Mater.

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The electrodes of metal oxide thin-film transistors (TFTs) can be printed in a practical way by using a solution-based approach, which could be useful for flexible displays and wearable sensors. We have proposed a technique that uses a simple bar coater and selective wettability to enable spontaneous direct patterned printing of top-contact conductive In−Sn−O (ITO) electrodes. We developed ITO inks that were tuned to produce well-defined printed structures and have minimal sheet resistance in order for this to happen. These inks were used to directly modify the surface wettability of the metal oxide semiconductor using photopatterning of the surface modification layer. In our experiments, a directly printed ITO demonstrated a good electrical resistivity of 0.04 Ω cm. In addition, the minimum patterned line width of 10 μm was obtained via developed printed methods. Furthermore, the TFTs incorporating top-contact ITO source/drain electrodes printed using our proposed method on an In−Zn−O semiconductor, which was fabricated through direct photopatterning and solution processing, demonstrated excellent switching performance. They displayed minimal hysteresis, 6 cm 2 /V s of saturated electron mobility, −2.5 V of threshold voltage, and an on− off ratio greater than 10 7 . The introduction of this spontaneous direct printing method is anticipated to significantly contribute to the broader utilization of printed electronics.

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Structural, Optical, and Sensing Properties of Nb-Doped ITO Thin Films Deposited by the Sol–Gel Method

Nicolescu

Mitrea

Hornoiu

et al. 2022

Gels

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The aim of the present study was the development of Nb-doped ITO thin films for carbon monoxide (CO) sensing applications. The detection of CO is imperious because of its high toxicity, with long-term exposure having a negative impact on human health. Using a feasible sol–gel method, the doped ITO thin films were prepared at room temperature and deposited onto various substrates (Si, SiO2/glass, and glass). The structural, morphological, and optical characterization was performed by the following techniques: X-ray diffractometry (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and UV/Vis/NIR spectroscopic ellipsometry (SE). The analysis revealed a crystalline structure and a low surface roughness of the doped ITO-based thin films. XTEM analysis (cross-sectional transmission electron microscopy) showed that the film has crystallites of the order of 5–10 nm and relatively large pores (around 3–5 nm in diameter). A transmittance value of 80% in the visible region and an optical band-gap energy of around 3.7 eV were found for dip-coated ITO/Nb films on SiO2/glass and glass supports. The EDX measurements proved the presence of Nb in the ITO film in a molar ratio of 3.7%, close to the intended one (4%). Gas testing measurements were carried out on the ITO undoped and doped thin films deposited on glass substrate. The presence of Nb in the ITO matrix increases the electrical signal and the sensitivity to CO detection, leading to the highest response for 2000 ppm CO concentration at working temperature of 300 °C.

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Simple and effective synthesis via sol–gel of Zn-doped ITO films and their microstructural, optical, and photoelectrochemical properties

Cited by 4 publications

References 40 publications

Multifunctional Zn-Doped ITO Sol–Gel Films Deposited on Different Substrates: Application as CO2-Sensing Material

Multifunctional Zn-Doped ITO Sol–Gel Films Deposited on Different Substrates: Application as CO2-Sensing Material

Direct Patterned Printing Method of Top-Contact ITO Electrodes for Solution-Processed Metal Oxide Thin-film Transistors

Structural, Optical, and Sensing Properties of Nb-Doped ITO Thin Films Deposited by the Sol–Gel Method

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