2012
DOI: 10.1109/ted.2012.2201942
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Simple and Efficient MASTAR Threshold Voltage and Subthreshold Slope Models for Low-Doped Double-Gate MOSFET

Abstract: In this brief, we propose simple and analytical models for threshold voltage and subthreshold slope including shortchannel and quantum effects for fully depleted or undoped double-gate MOS devices.Index Terms-Double-gate device, drain-induced barrier lowering (DIBL), short-channel effects (SCEs), subthreshold slope, threshold voltage.

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Cited by 20 publications
(7 citation statements)
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“…The SS expression reported in [15], although based on this potential model, led to a L 2 g dependence after several approximations, yielding an expression very close to one from [6].…”
Section: Subthreshold Swing Model With the Exponential Vdtmentioning
confidence: 57%
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“…The SS expression reported in [15], although based on this potential model, led to a L 2 g dependence after several approximations, yielding an expression very close to one from [6].…”
Section: Subthreshold Swing Model With the Exponential Vdtmentioning
confidence: 57%
“…(10) demonstrates that taking into account the x-dependence of the potential in the VDT is equivalent to replacing the oxide thickness t ox with the effective oxide thickness t eff ox . When t eff ox is injected directly into the SS model presented in [6] (with the correction reported in [7] to deal with depletions regions under the junctions), the agreement with the simulations improves (dashed line on Fig. 1a), but still displays large inaccuracies.…”
Section: Effective Oxide Thicknessmentioning
confidence: 84%
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