The CsBi3I10 (CBI) semiconductor
as a light
absorber emerges as a promising alternative to lead-based perovskites
owing to its low toxicity, good stability, and satisfying physical
properties. However, CBI exhibits an uncontrollable crystallization
process, poor film morphology, high defect density, and short carrier
lifetime, which lead to inferior optoelectronic properties, limiting
its practical application in solar cell devices. Here, the Sb doping
strategy is successfully developed for CBI films by a one-step antisolvent-free
fabrication method. It is found that Sb incorporation in binary CsBi3–x
Sb
x
I10 can modulate the crystallization kinetics and optimize the
film quality. As a result, polycrystalline films with high density
and few pinholes are obtained to enable the enhancement of light absorbance,
reduction of defects, suppression of nonradiative recombination, and
increase of surface hydrophobicity. The solar cells based on the CsBi2.7Sb0.3I10 film show a remarkably improved
power conversion efficiency of 0.82% compared to that of pristine
CBI (0.22%), which is among the highest reported efficiencies for
CBI-based thin-film solar cells. Moreover, unencapsulated devices
based on Sb-doped CBI exhibit outstanding environmental stability
and moisture tolerance. This work not only offers insights into understanding
the binary Bi-based materials but also provides a new way to fabricate
efficient and stable Bi-based solar cells.